DETAILED ACTION
Election/Restrictions
Applicant’s election without traverse of Group I (Claims 1-11) in the reply filed on 06/24/2026 is acknowledged. Examiner notes the cancellation of Claims 12-20 and the addition of Claims 21-29, drawn to the elected Group I.
Specification
The disclosure is objected to because of the following informalities: inconsistent reference numeral usage.
In the specification, for example ¶ [0039], the semiconductor substrate is given the reference numeral ‘202’. In ¶ [0035] the semiconductor substrate is given the reference numeral ‘212’ and then furthermore also given the reference numerals ‘202a’ and ‘202b’.
In the specification , for example ¶ [0043], the multi-layer alignment mark structure is given the reference numeral ‘208’. In other portions of the specification (for example, ¶ [0033]) the multi-layer alignment mark structure is given the reference numeral 208a and 208b.
In the specification, for example ¶ [0043], the dummy pad structure is given the reference numeral ‘324’. In other portions of the specification, for example ¶ [0107] the dummy pad structure is given reference numeral ‘324a’ and 324b’ and furthermore, a metallization layer of a dummy pad structure is also given the reference numerals ‘324a’ and ‘324b’. In ¶ [0092], for example, the reference numeral ‘324b’ is used for “a second dummy pad structure”. The corresponding relationships/structures are unclear.
The examples mentioned above are some examples of inconsistencies and more may be present. The corresponding structures cannot clearly be determined. For clarity, the applicant should use a unique reference numeral/name and apply it consistently throughout the specification in accordance with the drawings.
Claim Rejections - 35 USC § 103
The following is a quotation of AIA 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action:
A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102 of this title, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made.
Claim(s) 26 and 29 are rejected are rejected under AIA 35 U.S.C. 103 as being unpatentable over Kunishima (US 20100072578 A1)
Re: Independent Claim 26, Kunishima discloses:
A semiconductor substrate (Kunishima, Fig. 8) comprising:
a semiconductor layer (Kunishima, substrate; Fig. 8, element 16, ¶ [0111]);
a plurality of dielectric layers formed over the semiconductor layer (Kunishima, lower dielectric films, intermediate dielectric films, upper dielectric films, polyimide film; Fig. 3 and 8, elements 22c, 22b, 22a, and 45, respectively, can be considered a plurality of dielectric layers formed over the semiconductor layer); and
a multi-layer alignment mark structure comprising:
Kunishima does not explicitly disclose:
a multi-ring structure
Kunishima discloses:
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a structure (Kunishima, see attached annotated image, can be considered a multi-ring structure), it would be obvious to a person of ordinary skill in the art (POSITA) before the effective filing date to use the disclosed structure of Kunishima as a multi-ring structure, as it is an art-recognized equivalence (see MPEP 2144.06) used to achieve the same result of protecting the layers underneath.
Kunishima further discloses:
a multi-ring structure in a first dielectric layer (Kunishima, polyimide film; Fig. 3, element 45, can be considered a first dielectric film) of the plurality of dielectric layers; and
a dummy pad structure (Kunishima, dummy pads; Fig. 8, element 34c) in a second dielectric layer (Kunishima, lower dielectric film; Fig. 8, element 22c, can be considered a second dielectric layer) of the plurality of dielectric layers,
wherein the second dielectric layer is below the first dielectric layer (Kunishima, Fig. 8 shows element 22c below element 45), and
wherein the multi-ring structure overlaps the dummy pad structure (Kunishima, Fig. 8 shows the multi-ring structure overlaps the dummy pad structure in a top view).
Re: Dependent Claim 29, Kunishima disclose(s) all the limitations of claim 26 on which this claim depends. Kunishima further discloses:
wherein the multi-ring structure (Kunishima, see attached annotated image above, can be considered a multi-ring structure) is within a perimeter of the dummy pad structure (Kunishima, dummy pads; Fig. 8, element 34c) in a top view (Kunishima, Fig. 8, a line can be drawn from 34c to the multi-ring structure in a top view, which can be considered a perimeter).
Claim(s) 1, 3-10, 21-25, 28-28 are rejected under AIA 35 U.S.C. 103 as being unpatentable over Kunishima (US 20100072578 A1) in view of Liu (US 20210035926 A1).
Re: Independent Claim 1, Kunishima discloses:
a semiconductor substrate (Kunishima, Fig. 8) comprising:
a scribe line (Kunishima, scribe line; Fig. 8, element 30); and
a multi-layer alignment mark structure within the scribe line comprising:
Kunishima does not explicitly disclose:
a multi-ring structure
Kunishima discloses:
a structure (Kunishima, see attached annotated image, can be considered a multi-ring structure), it would be obvious to a person of ordinary skill in the art (POSITA) before the effective filing date to use the disclosed structure of Kunishima as a multi-ring structure, as it is an art-recognized equivalence (see MPEP 2144.06) used to achieve the same result of
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protecting the layers underneath.
Kunishima does not explicitly disclose:
a multi-ring structure having concentric rings in a first dielectric layer,
wherein the concentric rings are separated by annular regions of the first dielectric layer;
Liu discloses:
a multi-ring structure (Liu, Fig. 3, can be considered a multi-ring structure) having concentric rings (Liu, metal rings; Fig. 3, elements 114 and 116, can be considered concentric rings) in a first dielectric layer (Liu, one or more dielectric layer; Fig. 3, element 156), wherein the concentric rings are separated by annular regions of the first dielectric layer (Liu, Fig. 3, the metal rings 114 and 116 are separated by element 156, which can be considered annular regions of the first dielectric layer);
Kunishima discloses a semiconductor substrate, a scribe line, and a multi-layer alignment mark structure within the scribe line comprising a multi-ring structure, but does not disclose this multi-ring structure having concentric rings in a first dielectric layer, wherein the concentric rings are separated by annular regions of the first dielectric layer. Liu discloses a multi-ring structure having concentric rings in a first dielectric layer, wherein the concentric rings are separated by annular regions of the first dielectric layer. Liu and Kunishima both discloses a semiconductor substrate, a scribe line, and their configurations and are therefore analogous art. It would be obvious to a person of ordinary skill in the art (POSITA) before the effective filing date to include the multi-layer alignment mark structure, as disclosed by Liu, to the multi-ring structure of the semiconductor substrate disclosed by Kunishima, for the benefit of stress relief, crack stopper, and/or as a moisture/contaminant barrier (Liu, ¶ [0052]).
Kunishima, as modified by Liu, further discloses:
a dummy pad structure (Kunishima, dummy pad; Fig. 8, element 34c, the topmost element) in a second dielectric layer (Kunishima, lower dielectric film; Fig. 8, element 22c) below the multi-ring structure.
Re: Dependent Claim 3, Kunishima and Liu disclose all the limitations of claim 1 on which this claim depends. Kunishima, as modified by Liu, further discloses:
wherein the dummy pad structure (Kunishima, dummy pad; Fig. 8, element 34c) resists a reflectance of light from a silicon layer (Kunishima, silicon oxide layer; Fig. 8, element 22, ¶ [0077]) that is below the multi-layer alignment mark structure (Liu, Fig. 3, the dummy pad structure is a different element than silicon, and therefore at least partially reflects the light).
Re: Dependent Claim 4, Kunishima and Liu disclose all the limitations of claim 1 on which this claim depends. Kunishima, as modified by Liu, further discloses:
wherein the multi-ring structure (Liu, Fig. 3, can be considered a multi-ring structure) and the dummy pad structure (Kunishima, dummy pad; Fig. 8, element 34c) each comprise:
a copper material (Liu, ¶ [0052] discloses the rings of the multi-ring structure can comprise copper, Kunishima, ¶ [0080] and [0196], disclose the dummy pad structure can comprise copper).
Re: Dependent Claim 5, Kunishima and Liu disclose all the limitations of claim 1 on which this claim depends. Kunishima, as modified by Liu, further discloses:
wherein a location of the dummy pad structure (Kunishima, dummy pad; Fig. 8, element 34c) is offset from a central axis of the multi-ring structure (Liu, Fig. 3, can be considered a multi-ring structure, the middle of the scribe region (element 30) of Kunishima can be considered a central axis of the multi-ring structure).
Re: Dependent Claim 6, Kunishima and Liu disclose all the limitations of claim 1 on which this claim depends. Kunishima, as modified by Liu, further discloses:
wherein the dummy pad structure (Kunishima, dummy pad; Fig. 8, element 34c) is included in a metallization layer (Kunishima, metal wirings; Fig. 3, element 210, ¶ [0196]) included in a stack of backend of line layers (Kunishima, metal wiring layers; Fig. 3, element 21).
Re: Dependent Claim 7, Kunishima and Liu disclose all the limitations of claim 6 on which this claim depends. Kunishima, as modified by Liu, further discloses:
wherein the stack of backend of line layers (Kunishima, metal wiring layers; Fig. 3, element 21) includes a quantity of eight metallization layers (Kunishima, Fig. 3, see attached annotated figure),
wherein a bottom-most metallization layer is a first metallization layer (Kunishima, Fig. 3, see attached annotated figure, label 1),
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wherein a top-most metallization layer is an eighth metallization layer (Kunishima, Fig. 3, see attached annotated figure, label 8),
wherein the dummy pad structure (Kunishima, dummy pad; Fig. 8, element 34c) is a portion of a sixth metallization layer (Kunishima, see attached annotated figure, label 6) between the first metallization layer and the eighth metallization layer (Kunishima, annotated figure shows element 34c within a portion of a sixth metallization layer, which is in between the first metallization layer and the eight metallization layer).
Re: Dependent Claim 8, Kunishima and Liu disclose all the limitations of claim 1 on which this claim depends. Kunishima, as modified by Liu, further discloses:
a plurality of dielectric layers (Kunishima, upper dielectric film, silicon oxide film; Fig. 3, elements 22a and 43, respectively, make up a plurality of dielectric layers) between the dummy pad structure (Kunishima, dummy pad; Fig. 8, element 34c) and the multi-ring structure (Liu, Fig. 3, can be considered a multi-ring structure) without an intervening metallization layer between the dummy pad structure and the multi-ring structure (Kunishima, Fig. 8, no purely metallic layer is shown between the two structures).
Re: Dependent Claim 9, Kunishima and Liu disclose all the limitations of claim 1 on which this claim depends. Kunishima, as modified by Liu, further discloses:
wherein the dummy pad structure (Kunishima, dummy pad; Fig. 8, element 34c) is a first dummy pad structure (Kunishima, the topmost bar portion of 34c can be considered a first dummy pad structure) and further comprising:
a second dummy pad structure (Kunishima, the second bar portion of 34c can be considered a second dummy pad structure) below the first dummy pad structure.
Re: Dependent Claim 10, Kunishima and Liu disclose all the limitations of claim 1 on which this claim depends. Kunishima, as modified by Liu, further discloses:
a bond pad structure (Kunishima, metal pad; Fig. 3, element 26) in an integrated circuit die (Kunishima, element forming region; Fig. 3, element 20, ¶ [0079]) adjacent to the multi-ring structure (Liu, Fig. 3, can be considered a multi-ring structure).
Re: Independent Claim 21, Kunishima discloses:
A semiconductor substrate (Kunishima, Fig. 8) comprising:
a first dielectric layer (Kunishima, lower dielectric film; Fig. 8, element 22c, can be considered a first dielectric layer) over a silicon layer (Kunishima, substrate; Fig. 8, element 16, ¶ [0071]);
a dummy pad structure (Kunishima, dummy pads; Fig. 8, element 34c) in the first dielectric layer;
a second dielectric layer (Kunishima, polyimide film; Fig. 3, element 45, can be considered a second dielectric layer) over the first dielectric layer; and
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a multi-ring structure (Kunishima, Fig. 8, see attached annotated figure) over the dummy pad structure and in the second dielectric layer
Kunishima does not explicitly disclose:
a multi-ring structure including multiple concentric rings
Liu discloses:
a multi-ring structure (Liu, Fig. 3, can be considered a multi-ring structure) including multiple concentric rings (Liu, metal rings; Fig. 3, elements 114 and 116, can be considered concentric rings).
Kunishima discloses a semiconductor substrate, a first and second dielectric layer, a dummy pad structure, a multi-ring structure, but Kunishima does not explicitly disclose the multi-ring structure to include multiple concentric rings. Liu discloses a multi-ring structure including multiple concentric rings for use in a semiconductor substrate, Both Kunishima and Liu disclose semiconductor substrates, dielectric layers and are therefore analogous art. It would be obvious to a POSITA before the effective filing date to include the multi-ring structure, as disclosed by Liu, to the multi-ring structure of the semiconductor substrate disclosed by Kunishima, for the benefit of stress relief, crack stopper, and/or as a moisture/contaminant barrier (Liu, ¶ [0052]).
Re: Dependent Claim 22, Kunishima and Liu disclose all the limitations of claim 21 on which this claim depends. Kunishima, as modified by Liu, further discloses:
wherein the dummy pad structure (Kunishima, dummy pads; Fig. 8, element 34c) comprises a contiguous, planar portion having a first approximate area (Kunishima, Fig. 8, the area around one horizontal bar of 34c can be considered a contiguous planar portion having a first approximate area), and
wherein the multi-ring structure (Liu, Fig. 3, can be considered a multi-ring structure) has a second approximate area that is less than or equal to the first approximate area (Liu, a second approximate area can be drawn in a portion of the multi-ring structure region such that the second approximate area is less than or equal to the first approximate area).
Re: Dependent Claim 23, Kunishima and Liu disclose all the limitations of claim 21 on which this claim depends. Kunishima, as modified by Liu, further discloses:
wherein the dummy pad structure (Kunishima, dummy pads; Fig. 8, element 34c) comprises a contiguous, planar portion (Kunishima, Fig. 8, the area around one horizontal bar of 34c can be considered a contiguous planar portion), and
wherein the multi-ring structure (Liu, Fig. 3, can be considered a multi-ring structure), is within a perimeter of a top view of the contiguous, planar portion (Kunishima, Fig. 8 shows the multi-ring structure within a perimeter of 34c).
Re: Dependent Claim 24, Kunishima and Liu disclose all the limitations of claim 21 on which this claim depends. Kunishima, as modified by Liu, further discloses:
wherein the multi-ring structure (Liu, Fig. 3, can be considered a multi-ring structure) and the dummy pad structure (Kunishima, dummy pad; Fig. 8, element 34c) each comprise a metal material (Liu, ¶ [0052] discloses the rings of the multi-ring structure can comprise copper, Kunishima, ¶ [0080] and [0196], disclose the dummy pad structure can comprise copper, which is a metal material).
Re: Dependent Claim 25, Kunishima and Liu disclose all the limitations of claim 21 on which this claim depends. Kunishima, as modified by Liu, further discloses:
a plurality of dielectric layers (Kunishima, intermediate dielectric films, upper dielectric films; Fig. 8, elements 22b and 22a, respectively, can be considered a plurality of dielectric layers) between the first dielectric layer (Kunishima, lower dielectric film; Fig. 8, element 22c, can be considered a first dielectric layer) and the second dielectric layer (Kunishima, polyimide film; Fig. 3, element 45, can be considered a second dielectric layer).
Re: Dependent Claim 27, Kunishima discloses all the limitations of claim 26 on which this claim depends. Kunishima further discloses:
wherein the multi-ring structure (Kunishima, see attached annotated image in Claim 21, can be considered a multi-ring structure)
Kunishima does not disclose:
wherein the multi-ring structure comprises a plurality of concentric metal rings.
Liu discloses:
wherein the multi-ring structure (Liu, Fig. 3, can be considered a multi-ring structure) comprises a plurality of concentric metal rings (Liu, metal rings; Fig. 3, elements 114 and 116, can be considered a plurality of concentric metal rings).
Kunishima discloses a semiconductor substrate and a multi-ring structure, but does not disclose this multi-ring structure to comprise a plurality of concentric metal rings. Liu discloses a multi-ring structure having a plurality of concentric metal rings for use in a semiconductor substrate. Liu and Kunishima both discloses a semiconductor substrate and elements with their configurations and are therefore analogous art. It would be obvious to a POSITA before the effective filing date to include the multi-ring structure, as disclosed by Liu, to the multi-ring structure of the semiconductor substrate disclosed by Kunishima, for the benefit of stress relief, crack stopper, and/or as a moisture/contaminant barrier (Liu, ¶ [0052]).
Re: Dependent Claim 28, Kunishima and Liu disclose all the limitations of claim 27 on which this claim depends. Kunishima, as modified by Liu, further discloses:
wherein regions of the first dielectric layer (Liu, one or more dielectric layer; Fig. 3, element 156) are formed within the plurality of concentric metal rings (Liu, metal rings; Fig. 3, elements 114 and 116, can be considered a plurality of concentric metal rings).
Claim 2 is rejected under AIA 35 U.S.C. 103 as being unpatentable over Kunishima (US 20100072578 A1) in view of Liu (US 20210035926 A1) and in further view of Burnett (US 20030116727 A1).
Re: Dependent Claim 2, Kunishima and Liu disclose all the limitations of claim 1 on which this claim depends. Kunishima, as modified by Liu, further discloses:
wherein the dummy pad structure (Kunishima, dummy pad; Fig. 8, element 34c) promotes a difference in a reflectance of light between the concentric rings (Liu, metal rings; Fig. 3, elements 114 and 116, can be considered concentric rings) and the annular regions (Liu, Fig. 3, the metal rings 114 and 116 are separated by element 156, which can be considered annular regions, the materials of the rings and the annular regions are different, therefore a difference in a reflectance of light is promoted),
Kunishima, as modified by Liu, does not explicitly disclose:
wherein the difference in the reflectance of light is detectable on a repeatable basis by an automated optical inspection system
Burnett discloses:
wherein the difference in the reflectance of light is detectable on a repeatable basis by an automated optical inspection system (Burnett, Fig. 2, ¶ [0005] and [0023]).
Kunishima, as modified by Liu, discloses the dummy pad structure, the reflectance of light between the concentric rings and the annular regions, but does not explicitly disclose the difference in the reflectance of light is detectable on a repeatable basis by an automated optical inspection system. Burnett discloses detecting light by an optical inspection system for use in an electronic assembly. Kunishima, Liu, and Burnett disclose components used in semiconductor devices and are therefore analogous art. It would be obvious to a POSITA before the effective filing date to include the automated optical inspection system, as disclosed by Burnett, to the device of Kunishima, as modified by Liu, for improved inspection accuracy (Burnett, ¶ [0001]).
Claim 11 is rejected under AIA 35 U.S.C. 103 as being unpatentable over Kunishima (US 20100072578 A1) in view of Liu (US 20210035926 A1) and in further view of Okina (US 20210366855 A1).
Re: Dependent Claim 11, Kunishima and Liu disclose all the limitations of claim 10 on which this claim depends. Kunishima, as modified by Liu, further discloses:
bond pad structure (Kunishima, metal pad; Fig. 3, element 26)
multi-ring structure (Liu, Fig. 3, can be considered a multi-ring structure)
Kunishima, as modified by Liu, does not explicitly disclose:
wherein the bond pad structure is in a same dielectric layer as the multi-ring structure.
Okina discloses:
wherein the bond pad structure (Okina, first bonding pads; Fig. 6A, element 988, ¶ [0066]) is in a same dielectric layer (Okina, first pad-level dielectric layer, Fig. 6A, element 974) as the multi-ring structure (Okina, pad-level diffusion barrier layer; Fig. 6A, element 976, ¶ [0063]).
Kunishima, as modified by Liu, discloses a bond pad structure and a multi-ring structure, but does not explicitly disclose the bond pad structure is in a same dielectric layer as the multi-ring structure. Okina discloses a bond pad structure in a same dielectric layer as a multi-ring structure for use in a semiconductor die. Kunishima, Liu, and Okina disclose semiconductor components such as bond structures, wirings, and their configurations and are therefore analogous art. It would be obvious to a POSITA before the effective filing date to make the bonding pad of structure in a same dielectric layer as the multi-ring structure, as disclosed by Okina, for the benefit of simultaneously forming layers within the semiconductor (Okina, ¶ [0069]) for easier manufacturing.
Prior art made of record and not relied upon are considered pertinent to current application disclosure.
Singh (US 10727191 B2), Chen (US 20120175728 A1), Yu (US 20160020181 A1), and Chen (US 20250044510 A1) disclose semiconductor substrate structures with various elements such as scribe lines, dielectric layers, and dummy pads.
Conclusion
Any inquiry concerning this communication or earlier communications from the examiner should be directed to NIMARTA KAUR CHOWDHARY whose telephone number is (571)272-7679. The examiner can normally be reached usually Monday - Thursday, 6:45 AM - 4:45 PM (EST).
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If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Leonard Chang can be reached at (571) 270-3691. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
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/NIMARTA KAUR CHOWDHARY/ Examiner, Art Unit 2898
/Leonard Chang/ Supervisory Patent Examiner, Art Unit 2898
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