Prosecution Insights
Last updated: July 05, 2026
Application No. 18/435,180

SEMICONDUCTOR DEVICE WITH DIELECTRIC ON EPITAXY SIDEWALL

Non-Final OA
Filed
Feb 07, 2024
Examiner
KIM, TONG-HO
Art Unit
2811
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Taiwan Semiconductor Manufacturing Company, Ltd.
OA Round
1 (Non-Final)
95%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
96%
With Interview

Examiner Intelligence

Grants 95% — above average
95%
Career Allowance Rate
1027 granted / 1078 resolved
+27.3% vs TC avg
Minimal +1% lift
Without
With
+0.6%
Interview Lift
resolved cases with interview
Fast prosecutor
1y 8m
Avg Prosecution
25 currently pending
Career history
1096
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
66.8%
+26.8% vs TC avg
§102
14.6%
-25.4% vs TC avg
§112
6.8%
-33.2% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1078 resolved cases

Prosecution Timeline

Feb 07, 2024
Application Filed
Mar 25, 2026
Non-Final Rejection mailed (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12672304
ELECTROSTATIC DISCHARGE PROTECTION DEVICE
2y 6m to grant Granted Jun 30, 2026
Patent 12666650
FIELD-EFFECT TRANSISTORS (FETS) EMPLOYING THERMAL EXPANSION OF WORK FUNCTION METAL LAYERS FOR STRAIN EFFECT AND RELATED FABRICATION METHODS
3y 0m to grant Granted Jun 23, 2026
Patent 12666587
MEMORY DEVICES WITH A BACKSIDE READ BIT LINE
2y 9m to grant Granted Jun 23, 2026
Patent 12667024
Barriers for Selective Exposed Molding of Variable Height Components
2y 9m to grant Granted Jun 23, 2026
Patent 12660602
METAL INTERCONNECT LAYERS FOR FET ARCHITECTURES
3y 0m to grant Granted Jun 16, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
95%
Grant Probability
96%
With Interview (+0.6%)
1y 8m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1078 resolved cases by this examiner. Grant probability derived from career allowance rate.

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