Prosecution Insights
Last updated: September 09, 2026
Application No. 18/454,607

PIEZOELECTRIC DEVICE AND METHODS OF FORMATION

Non-Final OA §112
Filed
Aug 23, 2023
Examiner
PATEL, TULSIDAS C
Art Unit
Tech Center
Assignee
Taiwan Semiconductor Manufacturing Company, Ltd.
OA Round
1 (Non-Final)
43%
Grant Probability
Moderate
1-2
OA Rounds
0m
Est. Remaining
64%
With Interview

Examiner Intelligence

Grants 43% of resolved cases
43%
Career Allowance Rate
23 granted / 54 resolved
-17.4% vs TC avg
Strong +21% interview lift
Without
With
+21.2%
Interview Lift
resolved cases with interview
Typical timeline
2y 7m
Avg Prosecution
26 currently pending
Career history
75
Total Applications
across all art units

Statute-Specific Performance

§101
8.8%
-31.2% vs TC avg
§103
40.9%
+0.9% vs TC avg
§102
23.9%
-16.1% vs TC avg
§112
25.0%
-15.0% vs TC avg
Black line = Tech Center average estimate • Based on career data from 54 resolved cases

Office Action

§112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 1-10 and 15-20 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being incomplete for omitting an element deemed essential by the examiner, such omission amounting to a gap between the elements. See MPEP § 2172.01. The omitted element is: the “adhesion layer 206 over and/or on the substrate 204” as: described in paragraphs [0029], [0039], [0040], [0065], [0066], and [0070]; and illustrated in Figures 2, 3, 6C, 6D, 6E, 6F, 6G, 6H, 6I, 6J, 6K, 6L, and 6M. Claims 11-15 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being incomplete for omitting a step deemed essential by the examiner, such omission amounting to a gap between the steps. See MPEP § 2172.01. The omitted step is: forming an “adhesion layer 206 over and/or on the substrate 204” as: described in paragraphs [0029], [0039], [0040], [0065], [0066], and [0070]; and illustrated in Figures 2, 3, 6C, 6D, 6E, 6F, 6G, 6H, 6I, 6J, 6K, 6L, and 6M. Allowable Subject Matter Claims 1-20 are objected to as being rejected under 35 U.S.C. § 112(b) or 35 U.S.C. § 112 (pre-AIA ), second paragraph, but would be allowable if rewritten with the omitted elements and steps, respectively. The following is a statement of reasons for the indication of allowable subject matter. The prior art of record, taken alone or in combination, does not teach or suggest a piezoelectric device as recited by independent claim 1, comprising: an adhesion layer over a substrate; a first electrode over adhesion layer; a first piezoelectric layer on the first electrode; a first portion of a second electrode on the first piezoelectric layer; a diffusion barrier layer on the first portion of the second electrode; a second portion of the second electrode on the diffusion barrier layer; a second piezoelectric layer on the second portion of the second electrode; and a third electrode on the second piezoelectric layer. The prior art of record, taken alone or in combination, does not teach or suggest a method as recited by independent claim 8, comprising the steps of: forming an adhesion layer over a substrate; forming a first electrode of a piezoelectric device over the adhesion layer and the substrate of a semiconductor device; forming a first seed layer of a first piezoelectric layer on the first electrode; forming a main layer of the first piezoelectric layer on the first seed layer; forming a first portion of a second electrode on the first piezoelectric layer; forming a diffusion barrier layer on the first portion of the second electrode; forming a second portion of the second electrode on the diffusion barrier layer; forming a second seed layer of a second piezoelectric layer on the second portion of the second electrode; forming a main layer of the second piezoelectric layer on the second seed layer; and forming a third electrode on the second piezoelectric layer. The prior art of record, taken alone or in combination, does not teach or suggest a piezoelectric device as recited by independent claim 15, comprising: an adhesion layer over a substrate; a first electrode over adhesion layer; a first piezoelectric layer on the first electrode; a first portion of a second electrode on the first piezoelectric layer; a lead-blocking layer on the first portion of the second electrode, wherein the lead-blocking layer comprises a multiple-layer stack; a second portion of the second electrode on the lead-blocking layer; a second piezoelectric layer on the second portion of the second electrode; and a third electrode on the second piezoelectric layer. Dependent claims 2-7, 9-14, and 16-20 are considered allowable due to their respective dependence on allowed independent claims 1, 8, and 15. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to PEDRO J CUEVAS whose telephone number is (571)272-2021. The examiner can normally be reached 9:00 AM - 6:00 PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Tulsidas Patel can be reached at 571-272-2098. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /PEDRO J CUEVAS/Primary Examiner, Art Unit 2834 June 2, 2026
Read full office action

Prosecution Timeline

Aug 23, 2023
Application Filed
Jun 05, 2026
Non-Final Rejection mailed — §112
Aug 13, 2026
Interview Requested

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
43%
Grant Probability
64%
With Interview (+21.2%)
2y 7m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 54 resolved cases by this examiner. Grant probability derived from career allowance rate.

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