Prosecution Insights
Last updated: July 17, 2026
Application No. 18/475,370

Semiconductor Die Bonding

Non-Final OA §102§103
Filed
Sep 27, 2023
Examiner
LIU, MIKKA H
Art Unit
2817
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Wolfspeed Inc.
OA Round
1 (Non-Final)
92%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
96%
With Interview

Examiner Intelligence

Grants 92% — above average
92%
Career Allowance Rate
556 granted / 603 resolved
+24.2% vs TC avg
Minimal +4% lift
Without
With
+3.7%
Interview Lift
resolved cases with interview
Fast prosecutor
2y 2m
Avg Prosecution
31 currently pending
Career history
633
Total Applications
across all art units

Statute-Specific Performance

§101
0.3%
-39.7% vs TC avg
§103
50.4%
+10.4% vs TC avg
§102
13.7%
-26.3% vs TC avg
§112
34.7%
-5.3% vs TC avg
Black line = Tech Center average estimate • Based on career data from 603 resolved cases

Office Action

§102 §103
DETAILED ACTION The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions In response to a Restriction Requirement mailed on 12/19/2025, the Applicant elected Group I (claims 1-8, 10-18, 20 and 22) and withdrew claim 31 of a nonelected Group II in a reply filed on 02/19/2026. Because applicant did not distinctly and specifically point out the supposed errors in the restriction requirement, the election has been treated as an election without traverse (MPEP § 818.01(a)). There being no allowable generic or linking claim. Claims 9, 19, 21, 23-30 and 32-54 are canceled. Claims 1-8, 10-18, 20 and 22 are examined as below. Information Disclosure Statement Acknowledgment is made of applicant's Information Disclosure Statement (IDS) filed on 09/27/2023. The IDS has been considered. Specification The title of the invention is not descriptive. A new title is required that is clearly indicative of the invention to which the claims are directed. The following title is suggested: (Marked-Up Version) Semiconductor Die Bonding Including Die-Attach Layer Comprising Au, Sn and Co (Clean Version) Semiconductor Die Bonding Including Die-Attach Layer Comprising Au, Sn and Co Claim Rejections - 35 USC § 102 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale or otherwise available to the public before the effective filing date of the claimed invention. Claims 1, 4-5, 7-8, 14-15, 17-18 and 20 are rejected under 35 U.S.C. 102(a) as being anticipated by US 2016/0149104 A1 to Bergmann et al. (“Bergmann”). PNG media_image1.png 674 509 media_image1.png Greyscale Regarding independent claim 1, Bergmann in Figs. 1-2A teaches a semiconductor device package 200 (Fig. 2A & ¶ 61, LED component 200), comprising: a submount 220/230 (Fig. 2A & ¶ 61, a collective of metal anode pad 220 and metal cathode pad 230); a semiconductor die 100 (Figs. 1-2A & ¶ 61, LED die 100) comprising a wide bandgap semiconductor 110, 120 (Figs. 1-2A, ¶ 53 & ¶ 55, LED die 100 includes a Group III-nitride based ep region 110 and a transparent substrate 120 includes silicon carbide, and the Group III-nitride material and silicon carbide are wide bandgap semiconductors as the Applicant purported in paragraph 21 in the specification of the present application); a die-attach layer 180’ (Fig. 2A, ¶ 62 & ¶ 119, die attach layer 180’) between the submount 220/230 and the semiconductor die 100; and wherein the die-attach layer 180’ comprises gold (Au), tin (Sn), and cobalt (Co) (¶ 119, die attach layer 180’ includes an eutectic mixtures of Au, Sn and Co). Regarding claim 4, Bergmann in Fig. 2A further teaches the die-attach layer 180’ comprises a eutectic alloy (¶ 62 & ¶ 119; see the rejection of claim 1 as noted above). Regarding claim 5, Bergmann in Fig. 2A further teaches the semiconductor device package 200 comprises a protective layer 250 (Fig. 2A & ¶ 68, encapsulant 250) on the die-attach layer 180’. Regarding claim 7, Bergmann in Fig. 2A further teaches the die-attach layer 180’ further comprises nickel (Ni), silver (Ag), copper (Cu), or aluminum (Al) (¶ 119). Regarding claim 8, Bergmann in Fig. 2A further teaches the semiconductor device package 200 comprises an adhesion layer 180’ (Fig. 2A, ¶ 69, die attach layer 180’ is used to keep the LED die 100 stay attached (i.e., adhere) to the lead frame 210). Regarding claim 14, Bergmann in Fig. 2A further teaches the die-attach layer 180’ is lead (Pb) free (¶ 67, die attach layer 180’ comprises a lead-free solder; ¶ 119, lead is not listed as a material used for the die attach layer 180’ i.e., free of lead). Regarding claim 15, Bergmann in Fig. 2A further teaches the submount 220/230 comprises copper (Cu) (¶ 63, metal anode pad 220 and metal cathode pad 230 are parts of metal lead frame structure that comprises copper). Regarding claim 17, Bergmann in Fig. 2A further teaches the submount 220/230 comprises a lead frame 210 (Fig. 2A & ¶ 61, lead frame 210 includes the pads 220 and 230). Regarding claim 18, Bergmann in Fig. 2A further teaches the wide bandgap semiconductor 110, 120 comprises silicon carbide or a Group III nitride (¶ 53 & ¶ 55; see the rejection of claim 1 as noted above). Regarding claim 20, Bergmann in Figs. 2A and 23-24 further teaches the semiconductor device package 200 is a discrete power semiconductor package 200 (Fig. 2A & ¶ 61, the LED component 200 includes the LED die 100 is a discrete power semiconductor package, as the LED die 100 of the component 200 is a power device (i.e., diode) as the Applicant purported in paragraph 62 in the specification of the present application, and Figs. 23-24 & ¶ 129-¶ 132 disclose the LED components are discrete semiconductor packages). Claim Rejections - 35 USC § 103 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. This application currently names joint inventors. In considering patentability of the claims the examiner presumes that the subject matter of the various claims was commonly owned as of the effective filing date of the claimed invention(s) absent any evidence to the contrary. Applicant is advised of the obligation under 37 CFR 1.56 to point out the inventor and effective filing dates of each claim that was not commonly owned as of the effective filing date of the later invention in order for the examiner to consider the applicability of 35 U.S.C. 102(b)(2)(C) for any potential 35 U.S.C. 102(a)(2) prior art against the later invention. Claims 2-3, 12-13 and 22 are rejected under 35 U.S.C. 103 as being unpatentable and obvious over Bergmann. Regarding claim 2, Bergmann does not disclose a concentration of cobalt in the die-attach layer is in a range of about 0.01% by weight to about 0.5% by weight. However, Bergmann teaches a general condition in which there is a concentration of cobalt in the die-attach layer 180’ (Fig. 2A, ¶ 62 & ¶ 119). According to Section 2144.05 of the MPEP, "[W]here the general conditions of a claim are disclosed in the prior art, it is not inventive to discover the optimum or workable ranges by routine experimentation." In re Aller, 220 F. 2d 454, 456, 105 USPQ 233, 235 (CCPA 1955). Here, since Bergmann teaches said general conditions, it would not be inventive to discover the optimum or workable ranges by routine experimentation before the effective filing date of the claimed invention. Unless the Applicant can show that the specific conditions of the concentration of cobalt in the die-attach layer is in a range of about 0.01% by weight to about 0.5% by weight produce unexpected results that are different in kind and not different in degree, said general conditions taught by Bergmann renders claim 2 obvious. Regarding claim 3, Bergmann does not disclose a concentration of cobalt in the die-attach layer is in a range of about 0.01% by weight to about 0.25% by weight. However, Bergmann teaches a general condition in which there is a concentration of cobalt in the die-attach layer 180’ (Fig. 2A, ¶ 62 & ¶ 119). According to Section 2144.05 of the MPEP, "[W]here the general conditions of a claim are disclosed in the prior art, it is not inventive to discover the optimum or workable ranges by routine experimentation." In re Aller, 220 F. 2d 454, 456, 105 USPQ 233, 235 (CCPA 1955). Here, since Bergmann teaches said general conditions, it would not be inventive to discover the optimum or workable ranges by routine experimentation before the effective filing date of the claimed invention. Unless the Applicant can show that the specific conditions of the concentration of cobalt in the die-attach layer is in a range of about 0.01% by weight to about 0.25% by weight produce unexpected results that are different in kind and not different in degree, said general conditions taught by Bergmann renders claim 3 obvious. Regarding claim 12, Bergmann does not disclose a concentration of tin (Sn) in the die-attach layer is in a range of about 10% by weight to about 30% by weight. However, Bergmann teaches a general condition in which there is a concentration of tin (Sn) in the die-attach layer 180’ (Fig. 2A, ¶ 62 & ¶ 119). According to Section 2144.05 of the MPEP, "[W]here the general conditions of a claim are disclosed in the prior art, it is not inventive to discover the optimum or workable ranges by routine experimentation." In re Aller, 220 F. 2d 454, 456, 105 USPQ 233, 235 (CCPA 1955). Here, since Bergmann teaches said general conditions, it would not be inventive to discover the optimum or workable ranges by routine experimentation before the effective filing date of the claimed invention. Unless the Applicant can show that the specific conditions of the concentration of tin (Sn) in the die-attach layer is in a range of about 10% by weight to about 30% by weight produce unexpected results that are different in kind and not different in degree, said general conditions taught by Bergmann renders claim 12 obvious. Regarding claim 13, Bergmann does not disclose a concentration of gold (Au) in the die-attach layer is in a range of about 65% by weight to about 85% by weight. However, Bergmann teaches a general condition in which there is a concentration of gold (Au) in the die-attach layer 180’ (Fig. 2A, ¶ 62 & ¶ 119). According to Section 2144.05 of the MPEP, "[W]here the general conditions of a claim are disclosed in the prior art, it is not inventive to discover the optimum or workable ranges by routine experimentation." In re Aller, 220 F. 2d 454, 456, 105 USPQ 233, 235 (CCPA 1955). Here, since Bergmann teaches said general conditions, it would not be inventive to discover the optimum or workable ranges by routine experimentation before the effective filing date of the claimed invention. Unless the Applicant can show that the specific conditions of the concentration of gold (Au) in the die-attach layer is in a range of about 65% by weight to about 85% by weight produce unexpected results that are different in kind and not different in degree, said general conditions taught by Bergmann renders claim 13 obvious. Regarding independent claim 22, Bergmann in Figs. 1-2A teaches an attach material 180’ (Fig. 2A, ¶ 62 & ¶ 119, die attach layer 180’) for attaching a wide bandgap semiconductor device 100 (Figs. 1-2A & ¶ 61, LED die 100; ¶ 53 & ¶ 55, LED die 100 includes a Group III-nitride based ep region 110 and a transparent substrate 120 includes silicon carbide, and the Group III-nitride material and silicon carbide are wide bandgap semiconductors as the Applicant purported in paragraph 21 in the specification of the present application) to a submount 220/230 (Fig. 2A & ¶ 61, a collective of metal anode pad 220 and metal cathode pad 230), the attach material 180’ comprising a eutectic alloy 180’ (¶ 119, die attach layer 180’ includes an eutectic mixtures 180’ of Au, Sn and Co), the eutectic alloy comprising gold (Au), tin (Sn), and cobalt (Co) (¶ 119). However, Bergmann does not disclose a concentration of cobalt in the eutectic alloy is in a range of about 0.01% by weight to about 0.5% by weight. However, Bergmann teaches a general condition in which there is a concentration of cobalt in the eutectic alloy 180’ (Fig. 2A, ¶ 62 & ¶ 119). According to Section 2144.05 of the MPEP, "[W]here the general conditions of a claim are disclosed in the prior art, it is not inventive to discover the optimum or workable ranges by routine experimentation." In re Aller, 220 F. 2d 454, 456, 105 USPQ 233, 235 (CCPA 1955). Here, since Bergmann teaches said general conditions, it would not be inventive to discover the optimum or workable ranges by routine experimentation before the effective filing date of the claimed invention. Unless the Applicant can show that the specific conditions of the concentration of cobalt in the eutectic alloy is in a range of about 0.01% by weight to about 0.5% by weight produce unexpected results that are different in kind and not different in degree, said general conditions taught by Bergmann renders claim 22 obvious. Claim 16 is rejected under 35 U.S.C. 103 as being unpatentable over Bergmann in view of US 2011/0089556 A1 to Lee at al. (“Lee”). Regarding claim 16, Bergmann does not explicitly disclose the submount comprises silver-plated copper (Cu). Bergmann further discloses the submount 220/230 of a lead frame 210 (¶ 61) comprises copper (¶ 63). Lee recognizes a need for enhancing the adhesion of copper lead frame to other metal (¶ 4 & ¶ 29). Lee satisfies the need by providing a submount (¶ 4 & ¶ 29, lead frame formed from copper) comprising silver-plated copper (Cu) (¶ 4 & ¶ 29). Before the effective filing date of the claimed invention, it would have been obvious to one of ordinary skill in the art to modify the copper submount taught by Bergmann with the silver-plated copper taught by Lee, so as to enhance the adhesion of copper lead frame to other metal (Lee: ¶ 4 & ¶ 29). Allowable Subject Matter The following is a statement of reasons for the indication of allowable subject matter: Claims 6 and 10-11 are objected to as being dependent upon a rejected base claim, but would be allowable if (i) rewritten in independent form to include all of the limitations of the base claim and any intervening claims or (ii) the objected claim and any intervening claims are fully incorporated into the base claim. Claim 6 would be allowable, because the prior art of record, singularly or in combination, fails to disclose or suggest, in combination with the other claimed elements in claim 6, wherein the protective layer comprises gold. Claim 10 would be allowable, because the prior art of record, singularly or in combination, fails to disclose or suggest, in combination with the other claimed elements in claim 10, further comprising a diffusion barrier layer. Claim 11 would be allowable, because claim 11 depends from the allowable claim 10. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. US 2022/0139852 A1 to Pun Any inquiry concerning this communication or earlier communications from the examiner should be directed to MIKKA LIU whose telephone number is (571)272-2568. The examiner can normally be reached on 9AM-5AM EST M-F. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Eliseo Ramos-Feliciano can be reached on 571-272-7925. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /M.L./Examiner, Art Unit 2817 /ELISEO RAMOS FELICIANO/Supervisory Patent Examiner, Art Unit 2817
Read full office action

Prosecution Timeline

Sep 27, 2023
Application Filed
Apr 08, 2026
Non-Final Rejection mailed — §102, §103
Jul 07, 2026
Response Filed

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Prosecution Projections

1-2
Expected OA Rounds
92%
Grant Probability
96%
With Interview (+3.7%)
2y 2m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 603 resolved cases by this examiner. Grant probability derived from career allowance rate.

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