Prosecution Insights
Last updated: May 29, 2026
Application No. 18/486,576

THREE-DIMENSIONAL MEMORY DEVICE WORDLINES WITH REDUCED BLOCKING LAYER DAMAGE

Non-Final OA §102
Filed
Oct 13, 2023
Priority
Oct 19, 2022 — provisional 63/417,612
Examiner
GHYKA, ALEXANDER G
Art Unit
2812
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Applied Materials, Inc.
OA Round
1 (Non-Final)
84%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
97%
With Interview

Examiner Intelligence

Grants 84% — above average
84%
Career Allowance Rate
1078 granted / 1289 resolved
+15.6% vs TC avg
Moderate +14% lift
Without
With
+13.8%
Interview Lift
resolved cases with interview
Typical timeline
2y 3m
Avg Prosecution
30 currently pending
Career history
1320
Total Applications
across all art units

Statute-Specific Performance

§101
0.5%
-39.5% vs TC avg
§103
70.9%
+30.9% vs TC avg
§102
4.8%
-35.2% vs TC avg
§112
5.7%
-34.3% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1289 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election without traverse of Group I (claims 12-20) in the reply filed on 2/9/2026 is acknowledged. Claim Rejections - 35 USC § 102 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claims 12-20 are rejected under 35 U.S.C. 102(a)(1) and 102(a)(2) as being anticipated by Rabkin et al (US 2020/0295039). With respect to Claim 12, Rabkin et al discloses a three – dimensional (3D) memory device (Figures 12A and 12B) comprising: a blocking layer (Figure 12B, 44); and a wordline (Figure 12B, 46) comprising molybdenum (paragraph 96) disposed on the blocking layer, wherein the blocking layer comprises a high-k dielectric material (paragraph 116) . Even though Rabkin et al does not explicitly disclose the high k dielectric is “resistant to damage by an atomic layer deposition (ALD) chemistry use to form the molybdenum of the wordline ”, this limitation is inherent as the same materials and process is used. See Figures 12A-12B and corresponding text, especially paragraphs 91-116. With respect to Claim 13, Rabkin et al discloses wherein the blocking layer comprises a high k dielectric material having a dielectric constant of greater than about 7.8. See paragraph 116 of Rabkin et al. With respect to Claim 14, Rabkin et al discloses wherein the blocking layer comprises a high k dielectric material having a dielectric constant of greater than or equal to about 10. See paragraph 116 of Rabkin et al. With respect to Claim 15, Rabkin et al discloses wherein the blocking layer comprises at least one of a zirconium oxide, a lanthanum oxide, a yttrium oxide or a doped aluminum oxide. See paragraphs 89-91 and 101. With respect to Claim 16, Rabkin et al discloses wherein the blocking layer comprises at least one of zirconium dioxide, aluminum-zirconium dioxide, or doped zirconium dioxide. See paragraph 91. With respect to Claim 17, Rabkin et al discloses wherein the blocking layer comprises lanthanum aluminate. See paragraphs 91, 101 and 115. With respect to Claim 18, Rabkin et al discloses wherein the blocking layer comprises doped lanthanum oxide. See paragraph 41 and 101. With respect to Claim 19, Rabkin et al discloses further comprising a nucleation layer or a seed layer disposed between the blocking layer and the wordline. See paragraphs 96-97. With respect to Claim 20, Rabkin et al discloses wherein the nucleation layer or the seed layer comprises at least one of molybdenum silicide or titanium nitride. See paragraphs 96-97. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Any inquiry concerning this communication or earlier communications from the examiner should be directed to ALEXANDER G GHYKA whose telephone number is (571)272-1669. The examiner can normally be reached Monday-Friday 9-6. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Christine Kim can be reached at 571 272-8458. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. AGG March 7, 2026 /ALEXANDER G GHYKA/Primary Examiner, Art Unit 2812
Read full office action

Prosecution Timeline

Oct 13, 2023
Application Filed
Jun 18, 2025
Response after Non-Final Action
Mar 18, 2026
Non-Final Rejection mailed — §102
Apr 10, 2026
Applicant Interview (Telephonic)
Apr 10, 2026
Examiner Interview Summary

Precedent Cases

Applications granted by this same examiner with similar technology

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
84%
Grant Probability
97%
With Interview (+13.8%)
2y 3m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1289 resolved cases by this examiner. Grant probability derived from career allowance rate.

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