Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2800 2811 2812
This examiner grants 84% of resolved cases
Alexander G. Ghyka is an examiner in Tech Center 2800 and Art Unit 2800, with 1316 resolved cases. The allowance rate is 83.9%, and the median days to allowance is 846. These figures point to an efficient and successful prosecution path. The 83.9% rate is the primary indicator of success, while the 846-day figure represents the typical duration for applications that reach grant. Practitioners should use these metrics to set expectations for their clients.
The interview lift is 13.7%, which provides a solid boost to the 83.9% allowance rate. Given the 846-day median timeline and the 1316 resolved cases, interviews remain a useful tool for resolving complexities. The 13.7% lift suggests that oral advocacy is effective in this art unit. Practitioners should weigh the 13.7% lift against the 83.9% baseline when deciding on their prosecution strategy. These figures provide a data-grounded basis for navigating Art Unit 2800.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18794736 | METHOD OF FORMING INTERCONNECT STRUCTURE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18664776 | CAPACITOR AND ELECTRONIC DEVICE INCLUDING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18491835 | DISPLAY PANEL | Non-Final OA | Samsung Display Co., Ltd. |
| 18742080 | PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR, LOW NOISE AMPLIFIER, AND RELATED APPARATUS | Non-Final OA | HUAWEI TECHNOLOGIES CO., LTD. |
| 18703497 | N-POLAR III-NITRIDE NANOWIRE-BASED LED DEVICES | Non-Final OA | The Regents of the University of Michigan |
| 18580747 | BACKLIGHTING UNIT COMPRISING A SIDE-EMITTING SEMICONDUCTOR CHIP | Non-Final OA | ams-OSRAM International GmbH |
| 17912982 | THERMAL MANAGEMENT FOR PEROVSKITE ELECTRONIC DEVICES | Non-Final OA | The Trustees of Princeton University |
| 18312012 | WAFER BONDING APPARATUS AND METHOD | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18789598 | SYSTEMS AND METHODS FOR WAFER BOND MONITORING | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18783614 | FORMING LOW-STRESS SILICON NITRIDE LAYER THROUGH HYDROGEN TREATMENT | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18777198 | SEMICONDUCTOR DEVICES | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18774289 | BOTTOM-UP FORMATION OF CONTACT PLUGS | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18402778 | SYSTEMS FOR IMPROVED PLACEMENT OF REDISTRIBUTION LAYERS IN MULTI-DIE PACKAGES AND METHODS OF FORMING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company Limited |
| 18486576 | THREE-DIMENSIONAL MEMORY DEVICE WORDLINES WITH REDUCED BLOCKING LAYER DAMAGE | Final Rejection | Applied Materials, Inc. |
| 18618003 | HIGH-CMTI ISOLATOR LINK DESIGN AND RELATED METHODS | Non-Final OA | Analog Devices, Inc. |
| 18456309 | ION BEAM INSPECTION AND REPAIR WITH INCREASED SECONDARY ELECTRON YIELD | Non-Final OA | Carl Zeiss SMT GmbH |
| 18771063 | LIGHT-EMITTING DEVICE AND LIGHT-EMITTING APPARATUS | Non-Final OA | TIANJIN SANAN OPTOELECTRONICS CO., LTD. |
| 18663570 | LIGHT EMITTING DEVICE AND DISPLAY APPARATUS HAVING THE SAME | Non-Final OA | SEOUL VIOSYS CO., LTD. |
| 18802789 | INFRARED LED ELEMENT | Non-Final OA | Ushio Denki Kabushiki Kaisha |
| 18248169 | METHOD FOR PRODUCING A SUBSTRATE FOR EPITAXIAL GROWTH OF A GALLIUM-BASED III-N ALLOY LAYER | Final Rejection | Soitec |
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