Prosecution Insights
Last updated: July 17, 2026
Application No. 18/490,963

UNIDIRECTIONAL HIGH VOLTAGE PUNCH THROUGH TVS DIODE AND METHOD OF FABRICATION

Non-Final OA §102§103
Filed
Oct 20, 2023
Priority
Oct 21, 2022 — CN 2022112949479
Examiner
SALERNO, SARAH KATE
Art Unit
2814
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Littelfuse Semiconductor (Wuxi) Co. Ltd.
OA Round
1 (Non-Final)
73%
Grant Probability
Favorable
1-2
OA Rounds
2m
Est. Remaining
88%
With Interview

Examiner Intelligence

Grants 73% — above average
73%
Career Allowance Rate
644 granted / 878 resolved
+5.3% vs TC avg
Moderate +15% lift
Without
With
+14.8%
Interview Lift
resolved cases with interview
Typical timeline
2y 11m
Avg Prosecution
28 currently pending
Career history
910
Total Applications
across all art units

Statute-Specific Performance

§103
84.6%
+44.6% vs TC avg
§102
13.7%
-26.3% vs TC avg
§112
1.0%
-39.0% vs TC avg
Black line = Tech Center average estimate • Based on career data from 878 resolved cases

Office Action

§102 §103
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election without traverse of Group I, Species A in the reply filed on 5/26/26 is acknowledged. Claims 6, and 9-16 withdrawn from further consideration pursuant to 37 CFR 1.142(b) as being drawn to a nonelected method/species, there being no allowable generic or linking claim. Election was made without traverse in the reply filed on 5/26/29. Claim Rejections - 35 USC § 102 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1-2 and 7-8 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Kato et al. (US PGPub 2015/0364461). Claim 1: Kato teaches (Fig. 5) unidirectional transient voltage suppression (TVS) device, comprising: a first layer, comprising an N+ material, formed on a first part of a first main surface of a substrate; a second layer, extending from a second part of the first main surface, surrounding the first layer, and extending subjacent to the first layer, the second layer comprising an N- material; a third layer, comprising a P+ material, wherein the second layer is disposed between the first layer and the third layer; and an isolation region (110A), extending from the first main surface, and being disposed around the second layer. Claim 2: Kato teaches (Fig. 5) the substrate comprises a P+ substrate, wherein the third layer extends from a second main surface of the substrate, opposite the first main surface. Claim 7: Kato teaches (Fig. 5) the isolation region extends through the second layer and into the third layer, and wherein the second layer is disposed directly adjacent to the third layer. Claim 8: Kato teaches (Fig. 5) the substrate defines a set of side surfaces. Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 4-5 are rejected under 35 U.S.C. 103 as being unpatentable over Kato et al. (US PGPub 2015/0364461), as applied to claim 1 above, and further in view of Hong et al. (US PGPub 2020/0075751) Regarding claim 4, as described above, Kato substantially reads on the invention as claimed, except Kato does not teach an N+ guard ring, extending from the first main surface, and disposed around the first layer, within the second layer. Hong teaches (Fig. 3) a N+ guard ring, extending from the first main surface, and disposed around the first layer (316), within the second layer (Deep Nwell) as being conventional in the art. Therefore, it would have been obvious to one of ordinary skill in the art, before the effective filing date of the claimed invention, to have modified the device taught by Kato to have included the guard ring as it is known and conventional in the art as taught by Hong. 5: Kato teaches (Fig. 5) a passivation structure (110B), disposed on the first main surface, and extending over at least a portion of the isolation region, the second layer, the guard ring, and the first layer. Claims 17 and 19-20 are rejected under 35 U.S.C. 103 as being unpatentable over Kato et al. (US PGPub 2015/0364461) in view of Hong et al. (US PGPub 2020/0075751) Claim 17: Kato teaches (Fig. 5) a high voltage unidirectional transient voltage suppression (TVS) device, comprising: a first layer, comprising an N+ material, formed on a first part of a first main surface of a P+ substrate; a second layer, extending from a portion of the first main surface, surrounding the first layer, and extending subjacent to the first layer, the second layer comprising an N- material, wherein a third layer, comprising a P+ material, is formed, the third layer extending below the second layer to a second main surface of the P+ substrate; and an isolation region, extending from the first main surface, and being disposed around the second layer. Kato does not teach an N+ guard ring, extending from the first main surface, and disposed around the first layer, within the second layer. Hong teaches (Fig. 3) a N+ guard ring, extending from the first main surface, and disposed around the first layer (316), within the second layer (Deep Nwell) as being conventional in the art. Therefore, it would have been obvious to one of ordinary skill in the art, before the effective filing date of the claimed invention, to have modified the device taught by Kato to have included the guard ring as it is known and conventional in the art as taught by Hong. Claim 19: Kato teaches (Fig. 5) a passivation structure, disposed on the first main surface, and extending over at least a portion of the isolation region, the second layer, the guard ring, and the first layer. Claim 20: Kato teaches (Fig. 5) isolation region extends through the second layer and into the third layer, and wherein the second layer is disposed directly adjacent to the third layer. Allowable Subject Matter Claims 3 and 18 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to SARAH KATE SALERNO whose telephone number is (571)270-1266. The examiner can normally be reached M-F 6:30am-2:30pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Wael Fahmy can be reached at 5712721705. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /SARAH K SALERNO/Primary Examiner, Art Unit 2814
Read full office action

Prosecution Timeline

Oct 20, 2023
Application Filed
Jul 02, 2026
Non-Final Rejection mailed — §102, §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12677417
THREE DIMENSIONAL (3D) MEMORY DEVICE AND FABRICATION METHOD
3y 6m to grant Granted Jul 07, 2026
Patent 12672281
Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
2y 6m to grant Granted Jun 30, 2026
Patent 12666777
LIGHT EMITTING DIODE HAVING PLURALITY OF LIGHT EMITTING CELLS
3y 4m to grant Granted Jun 23, 2026
Patent 12660717
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE
2y 1m to grant Granted Jun 16, 2026
Patent 12635190
FinFET Device and Method of Forming Same
2y 5m to grant Granted May 19, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

Strategy Recommendation AI-generated — please review before filing

Get a prosecution strategy drawn from examiner precedents, rejection analysis, and claim mapping.
Typically takes 5-10 seconds — AI-generated, attorney review required before filing

Prosecution Projections

1-2
Expected OA Rounds
73%
Grant Probability
88%
With Interview (+14.8%)
2y 11m (~2m remaining)
Median Time to Grant
Low
PTA Risk
Based on 878 resolved cases by this examiner. Grant probability derived from career allowance rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month