Prosecution Insights
Last updated: July 17, 2026
Application No. 18/509,320

SEMICONDUCTOR DEVICE WITH LIGHT-SHIELDING LAYER AND FABRICATING METHOD OF THE SAME

Non-Final OA §103
Filed
Nov 15, 2023
Priority
Oct 31, 2023 — TW 112141787
Examiner
SLUTSKER, JULIA
Art Unit
2891
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
United Microelectronics Corp.
OA Round
1 (Non-Final)
77%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
89%
With Interview

Examiner Intelligence

Grants 77% — above average
77%
Career Allowance Rate
828 granted / 1077 resolved
+8.9% vs TC avg
Moderate +12% lift
Without
With
+12.3%
Interview Lift
resolved cases with interview
Typical timeline
2y 5m
Avg Prosecution
44 currently pending
Career history
1126
Total Applications
across all art units

Statute-Specific Performance

§103
87.3%
+47.3% vs TC avg
§102
6.9%
-33.1% vs TC avg
§112
3.9%
-36.1% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1077 resolved cases

Office Action

§103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election without traverse of Group I (claims 1-13) in the reply filed on 05/27/2026 is acknowledged. Claims 14-18 are withdrawn from further consideration pursuant to 37 CFR 1.142(b) as being drawn to a nonelected Group II, there being no allowable generic or linking claim. Election was made without traverse in the reply filed on 05/27/2026. Claim Rejections - 35 USC § 103 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 1-3, and 11 are rejected under 35 U.S.C. 103 as being unpatentable over Hsueh (US 2005/0189535) in view of Lee (US 2023/0074967). Regarding claim 1, Hsueh discloses a semiconductor device with a light-shielding layer, comprising: a dielectric layer (Fig.3C, numerals, 206; (208); a conductive plug (221) penetrating the dielectric layer (206); a first anode (212) disposed on a top surface of the dielectric layer (206); and the first anode (212) contacting an end of the conductive plug (221); a light-shielding layer (207) embedded in the dielectric layer (206);(208), wherein the light-shielding layer (207) is disposed at one side of the conductive plug (221), a top surface of the light-shielding layer (207)is aligned with the end of the conductive plug ( (221), and a switching element (256), (255); (250) electrically connected to the conductive plug (221). Hsueh does not disclose the light-shielding layer comprises titanium nitride, silver, aluminum, silicon nitride, silicon carbon nitride or silicon oxynitride. Hsueh however discloses that the light-shielding layer comprises a metal ([0025]). And Lee discloses the light-shielding layer comprises aluminum ([0157]). It would have been therefore obvious to one of ordinary skill in the art at the time the invention was filed to modify Hsueh with Lee to have the light-shielding layer comprises aluminum because this is one of the typical materials for forming light shielding layers (Lee, [0157]). Regarding claim 2, Hsueh discloses wherein an entirety of the light-shielding layer (207) is disposed under the first anode (212) (Fig.3C). Regarding claim 3, Hsueh discloses an emitting layer (217) covering the first anode (212); a cathode (240) disposed on the emitting layer (217), wherein the first anode (212), the emitting layer and the cathode form an organic light-emitting diode (OLED) ([0038]). Regarding claim 11, Lee discloses wherein the light-shielding layer is floating ([0157]). Allowable Subject Matter Claims 4-7, 8-10, 12, and 13 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. The search of the prior art does not disclose or reasonably suggest wherein the light-shielding layer does not contact the first anode and does not overlap the first anode as required by claim 4. The search of the prior art does not disclose or reasonably suggest the light-shielding layer contacts and overlaps the first anode as required by claim 5. The search of the prior art does not disclose or reasonably suggest wherein the light-shielding layer comprises: a trench; a titanium nitride layer contacting a bottom of the trench and a sidewall of the trench; and a tungsten layer filling in the trench as required by claim 6. The search of the prior art does not disclose or reasonably suggest a conductive pad contacting another end of the conductive plug, wherein the conductive pad is electrically connected connecting to a source/drain of the switching element as required by claim 8. The search of the prior art does not disclose or reasonably suggest wherein the light-shielding layer comprises: a trench; a silicon nitride layer contacting a bottom of the trench and a sidewall of the trench; a tungsten layer filling in the trench; and a titanium nitride layer disposed between the silicon nitride layer and the tungsten layer as required by claim 9. The search of the prior art does not disclose or reasonably suggest second anode disposed on the top surface of the dielectric layer, wherein the second anode is adjacent to the first anode, and the light-shielding layer contacts the first anode and the second anode as required by claim 12. The search of the prior art does not disclose or reasonably suggest a second anode disposed on the top surface of the dielectric layer, wherein the second anode is adjacent to the first anode, and the light-shielding layer only contacts the first anode and does not contact the second anode as required by claim 13. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to JULIA SLUTSKER whose telephone number is (571)270-3849. The examiner can normally be reached Monday-Friday, 9 am-6 pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Matthew Landau can be reached at 571-272-1731. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /JULIA SLUTSKER/ Primary Examiner, Art Unit 2891
Read full office action

Prosecution Timeline

Nov 15, 2023
Application Filed
Jun 16, 2026
Non-Final Rejection mailed — §103 (current)

Precedent Cases

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
77%
Grant Probability
89%
With Interview (+12.3%)
2y 5m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1077 resolved cases by this examiner. Grant probability derived from career allowance rate.

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