Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2891
This examiner grants 77% of resolved cases
Julia Slutsker has a high volume of 1097 resolved cases in Art Unit 2891. The examiner's allowance rate is 76.8 percent. This extensive record in Tech Center 2800 offers a stable statistical profile for applicants to use in their strategic planning. The 1097 resolved cases provide a high degree of confidence in the observed trends.
The interview lift of 12.9 percent indicates that interviews provide a modest benefit to the allowance probability. Practitioners can use this 12.9 percent lift to decide when an interview is the most appropriate tool for advancing a case beyond the 76.8 percent baseline. Direct communication in Art Unit 2891 remains a viable option for resolving complex rejections.
Practitioners can expect a median days to allowance of 909. This duration of 909 days is a useful reference for managing client expectations regarding the speed of prosecution in Tech Center 2800. By combining the allowance rate with this pendency data, applicants can better navigate the path to patent issuance.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18835971 | DISPLAY MODULE AND DISPLAY DEVICE | Non-Final OA | LG ELECTRONICS INC. |
| 18812545 | SEMICONDUCTOR MODULE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18664953 | SEMICONDUCTOR DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 17989435 | SEMICONDUCTOR DEVICES | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18667605 | Display Device | Non-Final OA | LG Display Co., Ltd. |
| 18465835 | METHOD OF FORMING A SI-COMPRISING EPITAXIAL LAYER SELECTIVELY ON A SUBSTRATE | Final Rejection | ASM IP Holding, B.V. |
| 18711150 | DISPLAY DEVICE AND ELECTRONIC DEVICE | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18466542 | METHOD OF FILLING A TRENCH FORMED IN A SEMICONDUCTOR SUBSTRATE | Final Rejection | STMicroelectronics (Crolles 2) SAS |
| 18788823 | SEMICONDUCTOR DEVICE HAVING WIDE TUNING RANGE VARACTOR AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18769182 | SEMICONDUCTOR DEVICE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18769261 | THREE DIMENSIONAL METAL INSULATOR METAL CAPACITOR STRUCTURE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18768284 | INTEGRATED CIRCUITS AND METHODS FOR POWER DELIVERY | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18767571 | Work Function Layers For Transistor Gate Electrodes | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18766881 | FIN FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18161298 | DEPOSITION METHOD AND DEPOSITION APPARATUS | Final Rejection | Tokyo Electron Limited |
| 18646800 | SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME | Non-Final OA | HON HAI PRECISION INDUSTRY CO., LTD. |
| 18162419 | SHIELDED WAFER LEVEL CHIP SCALE PACKAGE WITH SHIELD CONNECTED TO GROUND VIA REDISTRIBUTION LAYERS | Non-Final OA | Skyworks Solutions, Inc. |
| 18844214 | SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE | Non-Final OA | MITSUMI ELECTRIC CO., LTD. |
| 18755743 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | Non-Final OA | United Microelectronics Corp. |
| 18552143 | TRANSFER METHOD AND TRANSFER DEVICE OF LIGHT-EMITTING ELEMENT FOR DISPLAY | Final Rejection | SEOUL VIOSYS CO., LTD. |
| 18810415 | METHOD FOR FORMING HYBRID SUBSTRATE OF SOI WAFER | Non-Final OA | Shanghai Huali Integrated Circuit Corporation |
| 17721675 | CAPACITOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND METHOD FOR MANUFACTURING THEREOF | Final Rejection | AP MEMORY TECHNOLOGY CORPORATION |
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