Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2891
This examiner grants 77% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18835971 | DISPLAY MODULE AND DISPLAY DEVICE | Non-Final OA | LG ELECTRONICS INC. |
| 18666120 | SEMICONDUCTOR DEVICES | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18664953 | SEMICONDUCTOR DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18523033 | NON-VOLATILE MEMORY DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 17989435 | SEMICONDUCTOR DEVICES | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18264202 | NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR DEVICE | Non-Final OA | Panasonic Intellectual Property Management Co., Ltd. |
| 18711150 | DISPLAY DEVICE AND ELECTRONIC DEVICE | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18667605 | Display Device | Non-Final OA | LG Display Co., Ltd. |
| 18390469 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | Samsung Display Co., LTD. |
| 18497117 | STRUCTURE AND METHOD FOR INTEGRATING THROUGH METAL CONTACTS AND FLUID CHANNELS | Non-Final OA | Avago Technologies International Sales Pte. Limited |
| 18788823 | SEMICONDUCTOR DEVICE HAVING WIDE TUNING RANGE VARACTOR AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18769261 | THREE DIMENSIONAL METAL INSULATOR METAL CAPACITOR STRUCTURE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18767571 | Work Function Layers For Transistor Gate Electrodes | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18766881 | FIN FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18496969 | PHOTODETECTOR WITH DISTRIBUTED BRAGG REFLECTOR AND METHODS OF FORMING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company Limited |
| 17896716 | ADHESION IMPROVEMENT BETWEEN LOW-K MATERIALS AND CAP LAYERS | Final Rejection | Applied Materials, Inc. |
| 17697058 | NUCLEATION LAYERS FOR GROWTH OF GALLIUM-AND-NITROGEN-CONTAINING REGIONS | Non-Final OA | Applied Materials, Inc. |
| 18161298 | DEPOSITION METHOD AND DEPOSITION APPARATUS | Final Rejection | Tokyo Electron Limited |
| 18466542 | METHOD OF FILLING A TRENCH FORMED IN A SEMICONDUCTOR SUBSTRATE | Final Rejection | STMicroelectronics (Crolles 2) SAS |
| 18112707 | METHOD FOR FORMING A SHALLOW TRENCH ISOLATION STRUCTURE WITH REDUCED ENCROACHMENT OF ACTIVE REGIONS AND A SEMICONDUCTOR STRUCTURE THEREFROM | Non-Final OA | Nanya Technology Corporation |
| 18518806 | ELECTROSTATIC DISCHARGE PROTECTION DEVICE | Non-Final OA | VIA TECHNOLOGIES, INC. |
| 18755743 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | Non-Final OA | United Microelectronics Corp. |
| 18509320 | SEMICONDUCTOR DEVICE WITH LIGHT-SHIELDING LAYER AND FABRICATING METHOD OF THE SAME | Non-Final OA | UNITED MICROELECTRONICS CORP. |
| 18500586 | SEMICONDUCTOR STRUCTURE AND METHODS FOR FORMING THE SAME | Non-Final OA | WINBOND ELECTRONICS CORP. |
| 18353995 | ISOLATION STRUCTURE HAVING DIFFERENT LINERS ON UPPER AND LOWER PORTIONS | Non-Final OA | GlobalFoundries U.S. Inc. |
| 18655880 | ELECTROSTATIC DISCHARGE PROTECTION DEVICE | Non-Final OA | Renesas Design (UK) Limited |
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