Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2891
This examiner grants 77% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18137339 | LAYER DEPOSITION METHOD AND LAYER DEPOSITION APPARATUS | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18480544 | APPARATUS AND METHOD FOR MANUFACTURING DISPLAY DEVICE, AND MASK ASSEMBLY | Non-Final OA | Samsung Display Co., Ltd. |
| 18264202 | NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR DEVICE | Non-Final OA | Panasonic Intellectual Property Management Co., Ltd. |
| 18197528 | FORMATION OF SILICON-AND-METAL-CONTAINING MATERIALS FOR HARDMASK APPLICATIONS | Final Rejection | Applied Materials, Inc. |
| 17896716 | ADHESION IMPROVEMENT BETWEEN LOW-K MATERIALS AND CAP LAYERS | Non-Final OA | Applied Materials, Inc. |
| 18270080 | SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE PRODUCTION DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE | Non-Final OA | KYOCERA Corporation |
| 18480551 | IMAGE SENSOR DEVICE AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18224940 | FORKSHEET SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME | Non-Final OA | Tokyo Electron Limited |
| 18161298 | DEPOSITION METHOD AND DEPOSITION APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18280621 | METHOD AND APPARATUS FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR | Non-Final OA | National University Corporation Tokai National Higher Education and Research System |
| 18552220 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT ELEMENT, AND INTEGRATED CIRCUIT ELEMENT MANUFACTURING METHOD | Non-Final OA | Resonac Corporation |
| 18162419 | SHIELDED WAFER LEVEL CHIP SCALE PACKAGE WITH SHIELD CONNECTED TO GROUND VIA REDISTRIBUTION LAYERS | Final Rejection | Skyworks Solutions, Inc. |
| 18112707 | METHOD FOR FORMING A SHALLOW TRENCH ISOLATION STRUCTURE WITH REDUCED ENCROACHMENT OF ACTIVE REGIONS AND A SEMICONDUCTOR STRUCTURE THEREFROM | Non-Final OA | Nanya Technology Corporation |
| 18353995 | ISOLATION STRUCTURE HAVING DIFFERENT LINERS ON UPPER AND LOWER PORTIONS | Final Rejection | GlobalFoundries U.S. Inc. |
| 18392467 | SEMICONDUCTOR DEVICE WITH INTEGRATED SOFT-MAGNETIC COMPONENT, AND METHOD OF PRODUCING SAME | Non-Final OA | Melexis Technologies SA |
| 18552143 | TRANSFER METHOD AND TRANSFER DEVICE OF LIGHT-EMITTING ELEMENT FOR DISPLAY | Non-Final OA | SEOUL VIOSYS CO., LTD. |
| 17721675 | CAPACITOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND METHOD FOR MANUFACTURING THEREOF | Non-Final OA | AP MEMORY TECHNOLOGY CORPORATION |
| 18137331 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | DB HITEK CO., LTD. |
| 18523509 | CONTACT STRUCTURE OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR | Non-Final OA | SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY (HANGZHOU) CO., LTD. |
| 18549172 | LAYER-BY-LAYER VAN DER WAALS EPITAXIAL GROWTH OF WAFER-SCALE MOS2 CONTINUOUS FILMS | Non-Final OA | INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES |
| 18221976 | Method for Forming Mixed Substrate | Non-Final OA | Shanghai Huali Microelectronics Corporation |
| 18033132 | MONOLITHIC 3D INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF | Final Rejection | AJOU UNIVERSITY INSDUSTRY-ACADEMIC COOPERATION FOUNDATION |
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