Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA. Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b ) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the appl icant regards as his invention. Claim 13 is rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Claim 13 recites “above”, and “below”. However, there is no datum established for the relative positions. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale , or otherwise available to the public before the effective filing date of the claimed invention. Claim s 1- 4, 10-14, and 20 are rejected under 35 U.S.C. 102 (a)(1) as being anticipated by T ake uchi ; Masakatsu et al. ( US 20180237903 A1 ) . T akeuchi teaches a n ion processing system (Figure 1; [0017]) comprising: a process chamber (23; Figure 1; [0019]) containing a platen (13; Figure 1; [0033]-[0035]) for supporting a semiconductor substrate (2; Figure 1) , the platen (13; Figure 1; [0033]-[0035]) mounted on a movable ([0035]) shaft (not numbered; Figure 1) ; an ion source (21,P; Figure 1; [0026]) connected to the process chamber (23; Figure 1; [0019]) and adapted to project an ion beam (P,11a; Figure 1; [0028]) toward the platen (13; Figure 1; [0033]-[0035]) ; and at least one cooled plate ( 16,35; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) located within the process chamber (23; Figure 1; [0019]) for collecting byproducts of etching and deposition processes , as claimed by claim 1 . The above, and below, italicized claim text is considered intended use claim requirements for the pending apparatus claims and are based on the chemical/physical properties of the process reactants. Further, Applicant has not provided sufficient distinguishing structural characteristics of Applicant's claimed invention to contrast the Examiner's cited prior art. When the structure recited in the reference is substantially identical to that of the claims, claimed properties or functions are presumed to be inherent . The Exam in er notes MPEP 2112 which states the express, implicit, and inherent disclosures of a prior art reference may be relied upon in the rejection of claims under 35 U.S.C. 102 or 103. "The inherent teaching of a prior art reference, a question of fact, arises both in the context of anticipation and obviousness." In re Napier, 55 F.3d 610, 613, 34 USPQ2d 1782, 1784 (Fed. Cir. 1995) (affirmed a 35 U.S.C. 103 rejection based in part on inherent disclosure in one of the references). See also In re Grasselli, 713 F.2d 731, 739, 218 USPQ 769, 775 (Fed. Cir. 1983). T akeuchi further teaches: The ion processing system (Figure 1; [0017]) of claim 1, wherein the at least one cooled plate ( 16,35; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) is mounted to a wall of the process chamber (23; Figure 1; [0019]) , adjacent the ion source (21,P; Figure 1; [0026]) and in a confronting relationship with the platen (13; Figure 1; [0033]-[0035]) , as claimed by claim 2 The ion processing system (Figure 1; [0017]) of claim 1, wherein the at least one cooled plate ( 16,35; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) comprises a first cooled plate (first 16 of 35 ; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) and a second cooled plate (second 35 of 16; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) , wherein the first cooled plate (first 16 of 35 ; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) is mounted to a wall of the process chamber (23; Figure 1; [0019]) on a first side of the ion source (21,P; Figure 1; [0026]) and the second cooled plate (second 35 of 16; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) is mounted to the wall of the process chamber (23; Figure 1; [0019]) on a second side of the ion source (21,P; Figure 1; [0026]) opposite the first side , as claimed by claim 3 The ion processing system (Figure 1; [0017]) of claim 1, wherein the at least one cooled plate ( 16,35; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) comprises: a main body (16+37+35; Figure 3; [0055]) ; and a cooling line (43,45,46,64,52; Figure 3; [0060]-[0062]) extending through the main body (16+37+35; Figure 3; [0055]) for circulating a cooling fluid through the main body (16+37+35; Figure 3; [0055]), as claimed by claim 4 The ion processing system (Figure 1; [0017]) of claim 1, wherein the at least one cooled plate ( 16,35; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) is coupled to a cooled fluid source (63; Figure 1) located outside of the process chamber (23; Figure 1; [0019]) , as claimed by claim 10 A process chamber (23; Figure 1; [0019]) of an ion processing system (Figure 1; [0017]) , the process chamber (23; Figure 1; [0019]) comprising: a platen (13; Figure 1; [0033]-[0035]) for supporting a semiconductor substrate (2; Figure 1) , the platen (13; Figure 1; [0033]-[0035]) mounted on a movable ([0035]) shaft (not numbered; Figure 1) ; and at least one cooled plate ( 16,35; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) located within the process chamber (23; Figure 1; [0019]) for collecting byproducts of etching and deposition processes , as claimed by claim 11 The process chamber (23; Figure 1; [0019]) of claim 11, wherein the at least one cooled plate ( 16,35; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) is mounted to a wall of the process chamber (23; Figure 1; [0019]) in a confronting relationship with the platen (13; Figure 1; [0033]-[0035]) , as claimed by claim 12 The process chamber (23; Figure 1; [0019]) of claim 11, wherein the at least one cooled plate ( 16,35; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) comprises: a first cooled plate (first 16 of 35 ; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) mounted to a wall of the process chamber (23; Figure 1; [0019]) above, and in a confronting relationship with, the platen (13; Figure 1; [0033]-[0035]) ; and a second cooled plate (second 35 of 16; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) mounted to the wall of the process chamber (23; Figure 1; [0019]) below, and in a confronting relationship with, the platen (13; Figure 1; [0033]-[0035]) , as claimed by claim 13 The process chamber (23; Figure 1; [0019]) of claim 11, wherein the at least one cooled plate ( 16,35; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) comprises: a main body (16+37+35; Figure 3; [0055]) ; and a cooling line (43,45,46,64,52; Figure 3; [0060]-[0062]) extending through the main body (16+37+35; Figure 3; [0055]) for circulating a cooling fluid through the main body (16+37+35; Figure 3; [0055]) , as claimed by claim 14 The process chamber (23; Figure 1; [0019]) of claim 11, wherein the at least one cooled plate ( 16,35; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) is coupled to a cooled fluid source (63; Figure 1) located outside of the process chamber (23; Figure 1; [0019]) , as claimed by claim 20 Allowable Subject Matter Claims 5-6, 7-9, and 15-19 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. The following is a statement of reasons for the indication of allowable subject matter: T akeuchi ; Masakatsu et al. ( US 20180237903 A1 ) as the closest cited prior art does not teach or suggest, alone or in combination: The ion processing system (Figure 1; [0017]) of claim 4, wherein the at least one cooled plate ( 16,35; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) further comprises a heat sink (Applicant’s 162; Figure 2c) removably mounted to a front surface of the main body (16+37+35; Figure 3; [0055]) , as claimed by claim 5 The ion processing system (Figure 1; [0017]) of claim 5, wherein the heat sink (Applicant’s 162; Figure 2c) is coated with a film of barrier thin alumina , as claimed by claim 6 The ion processing system (Figure 1; [0017]) of claim 1, further comprising a first shaft (not numbered; Figure 1) enclosure wall (Applicant’s 180,182; Figure 3a) and a second shaft (not numbered; Figure 1) enclosure wall (Applicant’s 180,182; Figure 3a) surrounding and partially enclosing the movable ([0035]) shaft (not numbered; Figure 1), wherein the at least one cooled plate ( 16,35; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) comprises a first cooled plate (first 16 of 35; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) and a second cooled plate (second 35 of 16; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) , wherein the first cooled plate (first 16 of 35; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) is mounted to an exterior surface of the first shaft (not numbered; Figure 1) enclosure wall (Applicant’s 180,182; Figure 3a) and the second cooled plate (second 35 of 16; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) is mounted to an exterior surface of the second shaft (not numbered; Figure 1) enclosure wall (Applicant’s 180,182; Figure 3a) , as claimed by claim 7 The ion processing system (Figure 1; [0017]) of claim 7, wherein the first cooled plate (first 16 of 35; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) and the second cooled plate (second 35 of 16; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) are oriented perpendicular to the platen (13; Figure 1; [0033]-[0035]) , as claimed by claim 8 The ion processing system (Figure 1; [0017]) of claim 7, wherein the first cooled plate (first 16 of 35; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) and the second cooled plate (second 35 of 16; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) are oriented parallel to the platen (13; Figure 1; [0033]-[0035]) and in a confronting relationship with the ion source (21,P; Figure 1; [0026]) , as claimed by claim 9 The process chamber (23; Figure 1; [0019]) of claim 14, wherein the at least one cooled plate ( 16,35; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) further comprises a heat sink (Applicant’s 162; Figure 2c) removably mounted to a front surface of the main body (16+37+35; Figure 3; [0055]) , as claimed by claim 15 The process chamber (23; Figure 1; [0019]) of claim 15, wherein the heat sink (Applicant’s 162; Figure 2c) is coated with a film of barrier thin alumina , as claimed by claim 16 The process chamber (23; Figure 1; [0019]) of claim 11, further comprising a first shaft (not numbered; Figure 1) enclosure wall (Applicant’s 180,182; Figure 3a) and a second shaft (not numbered; Figure 1) enclosure wall (Applicant’s 180,182; Figure 3a) surrounding and partially enclosing the movable ([0035]) shaft (not numbered; Figure 1), wherein the at least one cooled plate ( 16,35; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) comprises a first cooled plate (first 16 of 35; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) and a second cooled plate (second 35 of 16; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) , wherein the first cooled plate (first 16 of 35; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) is mounted to an exterior surface of the first shaft (not numbered; Figure 1) enclosure wall (Applicant’s 180,182; Figure 3a) and the second cooled plate (second 35 of 16; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) is mounted to an exterior surface of the second shaft (not numbered; Figure 1) enclosure wall (Applicant’s 180,182; Figure 3a) , as claimed by claim 17 The process chamber (23; Figure 1; [0019]) of claim 17, wherein the first cooled plate (first 16 of 35; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) and the second cooled plate (second 35 of 16; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) are oriented perpendicular to the platen (13; Figure 1; [0033]-[0035]) , as claimed by claim 18 The process chamber (23; Figure 1; [0019]) of claim 17, wherein the first cooled plate (first 16 of 35; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) and the second cooled plate (second 35 of 16; Figure 1-3; “plate”-[0044] - Applicant’s 150a,b; Figure 1a,2 ) are oriented parallel to the platen (13; Figure 1; [0033]-[0035]) , as claimed by claim 19 Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Prior art sources with thermally controlled components other than platens include US 20250263837 A1 ; US 20190371574 A1 ; US 4901667 A ; US 6335293 B1 ; US 7291360 B2 ; US 20050214477 A1 , US 20050211171 A1 , US 7695590 B2 ; US 20110265821 A1 Any inquiry concerning this communication or earlier communications from the examiner should be directed to Examiner Rudy Zervigon whose telephone number is (571) 272- 1442. The examiner can normally be reached on a Monday through Thursday schedule from 8 am through 6 pm EST . The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300 . Any Inquiry of a general nature or relating to the status of this application or proceeding should be directed to the Chemical and Materials Engineering art unit receptionist at (571 ) 272-1700. If the examiner can not be reached please contact the examiner's supervisor, Parviz Hassanzadeh, at (571) 272- 1435 . Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http:/Awww.uspto.gov/interviewpractice. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or (571) 272-1000. /Rudy Zervigon/ Primary Examiner, Art Unit 1716