Prosecution Insights
Last updated: July 15, 2026
Application No. 18/528,826

RESISTIVE RANDOM ACCESS MEMORY

Non-Final OA §102§103
Filed
Dec 05, 2023
Priority
Jul 20, 2021 — TW 110126609 +1 more
Examiner
PAYEN, MARVIN
Art Unit
2899
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
United Microelectronics Corp.
OA Round
1 (Non-Final)
77%
Grant Probability
Favorable
1-2
OA Rounds
3m
Est. Remaining
80%
With Interview

Examiner Intelligence

Grants 77% — above average
77%
Career Allowance Rate
363 granted / 470 resolved
+9.2% vs TC avg
Minimal +3% lift
Without
With
+2.8%
Interview Lift
resolved cases with interview
Typical timeline
2y 10m
Avg Prosecution
3 currently pending
Career history
477
Total Applications
across all art units

Statute-Specific Performance

§101
0.8%
-39.2% vs TC avg
§103
80.7%
+40.7% vs TC avg
§102
13.4%
-26.6% vs TC avg
§112
2.1%
-37.9% vs TC avg
Black line = Tech Center average estimate • Based on career data from 470 resolved cases

Office Action

§102 §103
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1-5, 10 and 12-16 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Glassman et al. (US Pub. No.: 2020/0144496, from hereinafter “Glassman”). Re Claim 1. Glassman discloses, a resistive random access memory, comprising: a plurality of unit structures (152-155), disposed on a substrate (121), wherein each of the plurality of unit structures comprises: a first electrode (122), disposed on the substrate; and a first metal oxide layer (126), disposed on the first electrode; and a second electrode (132), disposed on the plurality of unit structures and connected to the plurality of unit structures. Claim 2. Glassman discloses, wherein in each of the plurality of unit structures, a top width is less than or substantially equal to a bottom width. Re Claim 3. Glassman discloses, wherein a material of the first electrode comprises titanium, tantalum, titanium nitride, tantalum nitride, aluminum titanium nitride, titanium tungsten, platinum, iridium, tungsten, ruthenium, graphite, or a combination thereof [0032]. Re Claim 4. Glassman discloses, wherein a material of the second electrode comprises titanium, tantalum, titanium nitride, tantalum nitride, aluminum titanium nitride, titanium tungsten, platinum, iridium, tungsten, ruthenium, graphite, or a combination thereof [0034]. Claim 5. Glassman discloses, further comprising a second metal oxide layer (124) disposed on the plurality of unit structures and connected to the plurality of unit structures, wherein the second electrode is located on the second metal oxide layer. Re Claim 10. Glassman discloses, wherein a material of the first metal oxide layer comprises hafnium oxide, zirconium oxide, hafnium zirconium oxide, hafnium aluminum oxide, hafnium oxynitride, hafnium silicon oxide, hafnium strontium oxide, hafnium yttrium oxide, or a combination thereof [0033]. Re Claim 12. Glassman discloses, wherein the plurality of unit structures are arranged in an array. Re Claim 13. Glassman discloses, comprising a plurality of the second electrodes arranged parallel to each other, wherein each of the second electrodes is connected in series with the unit structures in one row of the array. Re Claim 14. Glassman discloses in Fig. 5, further comprising a via (530) disposed on the second electrode. Re Claim 15. Glassman discloses in Fig. 6B, further comprising a circuit layer (4400) disposed on the via and connected to the via. Re Claim 16. Glassman discloses in Fig. 3A, further comprising a spacer (340) disposed on sidewalls of the first electrode and the first metal oxide layer. Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 6-7, 11 and 17 are rejected under 35 U.S.C. 103 as being unpatentable over Glassman. Re Claim 6. Glassman fails to discloses: wherein a material of the second metal oxide layer comprises hafnium oxide, zirconium oxide, hafnium zirconium oxide, hafnium aluminum oxide, hafnium oxynitride, hafnium silicon oxide, hafnium strontium oxide, hafnium yttrium oxide, or a combination thereof. However, Glassman discloses: wherein a material of the second metal oxide layer comprises titanium oxide. Therefore, it would have been obvious to one of ordinary skill in the art at the time the invention was filed, since it has been held to be within the general skill of a worker in the art to select a known material on the basis of its suitability for the intended use as a matter of obvious design choice. In re Leshin, 125 USPQ 416. Re Claim 7. Glassman fails to disclose, wherein the second metal oxide layer is an oxygen-rich layer. However, it would have been obvious to one of ordinary skill in the art at the time the invention was filed, since it has been held to be within the general skill of a worker in the art to select a known material on the basis of its suitability for the intended use as a matter of obvious design choice. In re Leshin, 125 USPQ 416. Re Claim 11. Glassman fails to disclose, wherein the first metal oxide layer is a metal-rich layer. However, it would have been obvious to one of ordinary skill in the art at the time the invention was filed, since it has been held to be within the general skill of a worker in the art to select a known material on the basis of its suitability for the intended use as a matter of obvious design choice. In re Leshin, 125 USPQ 416. Re Claim 17. Glassman fails to disclose, wherein the second electrode is used as a bit line. However, the claim would have been obvious to one of ordinary skill in the art at the time the invention was filed because a particular known technique was recognized as part of the ordinary capabilities of one skilled in the art, and “a person of ordinary skill has good reason to pursue the known options within his or her technical grasp.” KSR International Co. v. Teleflex Inc., 82 USPQ2d 1385 (U.S. 2007). See also, Pfizer Inc. v. Apotex Inc., 82 USPQ2d 1852 (Fed. Cir. 2007). Allowable Subject Matter Claims 8 and 9 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Re Claim 8. The prior art, individually or in combination, neither anticipates nor renders obvious the claimed limitation for the particular features and arrangement of a RRAM comprising, “a conductive barrier layer disposed between the second electrode and the second metal oxide layer”. Re Claim 9. Glassman fails to disclose, wherein a material of the conductive barrier layer comprises iridium. Any inquiry concerning this communication or earlier communications from the examiner should be directed to MARVIN PAYEN whose telephone number is (571)270-7435. The examiner can normally be reached on Monday-Thursday, Fridays off. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Zandra Smith can be reached on (571)272-2429. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /MARVIN PAYEN/Primary Examiner, Art Unit 2899
Read full office action

Prosecution Timeline

Dec 05, 2023
Application Filed
Apr 08, 2026
Non-Final Rejection mailed — §102, §103
Jul 06, 2026
Response Filed

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12666627
MEMORY DEVICE AND METHOD OF FORMING THE SAME AND INTEGRATED CIRCUIT
4y 1m to grant Granted Jun 23, 2026
Patent 12666983
SEMICONDUCTOR DEVICE
3y 1m to grant Granted Jun 23, 2026
Patent 12654979
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
3y 4m to grant Granted Jun 16, 2026
Patent 12652967
TECHNOLOGIES FOR SEMICONDUCTOR DEVICES INCLUDING AMORPHOUS SILICON
4y 1m to grant Granted Jun 09, 2026
Patent 12615971
RESISTIVE RANDOM ACCESS MEMORY AND METHOD OF PREPARING THE SAME
2y 11m to grant Granted Apr 28, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
77%
Grant Probability
80%
With Interview (+2.8%)
2y 10m (~3m remaining)
Median Time to Grant
Low
PTA Risk
Based on 470 resolved cases by this examiner. Grant probability derived from career allowance rate.

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