Prosecution Insights
Last updated: August 16, 2026
Application No. 18/574,367

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER, AND COMPOUND

Non-Final OA §102§103
Filed
Dec 27, 2023
Priority
Jun 30, 2021 — JP 2021-109611 +1 more
Examiner
FRASER, STEWART A
Art Unit
Tech Center
Assignee
JSR Corporation
OA Round
1 (Non-Final)
86%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
99%
With Interview

Examiner Intelligence

Grants 86% — above average
86%
Career Allowance Rate
1167 granted / 1357 resolved
+26.0% vs TC avg
Moderate +14% lift
Without
With
+14.3%
Interview Lift
resolved cases with interview
Typical timeline
2y 5m
Avg Prosecution
28 currently pending
Career history
1370
Total Applications
across all art units

Statute-Specific Performance

§101
1.3%
-38.7% vs TC avg
§103
48.3%
+8.3% vs TC avg
§102
22.3%
-17.7% vs TC avg
§112
18.1%
-21.9% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1357 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . This is the initial office action for US Patent Application No. 18/574367 by Miyata et al. Claims 1-8 are currently pending and have been fully considered. Priority Receipt is acknowledged of certified copies of papers required by 37 CFR 1.55. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1, 5 and 6 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Shao et al. (CN 111662267 A), herein referred to as Shao. Shao is provided in Applicant’s IDS filed 12/27/2023. Regarding claims 1, 5 and 6, Shao teaches (Claim 1 and Examples 1-3) a photoresist acid-generating resin containing a dioxobicyclo[2,2,2]octanedicarboxylate structure. The dioxobicyclo[2,2,2]octanedicarboxylate structure taught by Shao satisfies the claimed composition recited in claim 1 and the claimed polymer recited in claim 6. The photoresist acid-generating resin taught by Shao is employed in a photolithography process (resist pattern forming method). Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 3 and 4 are rejected under 35 U.S.C. 103 as being unpatentable over Shao et al. (CN 111662267 A), herein referred to as Shao, in view of Bi et al. (CN 112645923 A), herein referred to as Bi. Shao and Bi are provided in Applicant’s IDS filed 12/27/2023. The Shao reference does not appear to explicitly teach the limitations of claims 3 and 4 directed to further chemical composition limitations for claim 1. However, from the same field of technology, Bi recites a photoresist resin monomer containing a photoacid generator. In view of claims 3 and 4, Bi teaches (Claims 1 and 2, Examples 1-3) a photoresist resin monomer composition having structural units that satisfy claims 3 and 4. Therefore, at the time of the filing date of the present application, it would have been obvious to one of ordinary skill in the art to modify the photoresist acid-generating resin taught by Shao with the photoresist resin monomer composition taught by Bi in order to optimize the photosensitive properties of the composition while also having improved acid diffusion control properties. Allowable Subject Matter Claim 2 is objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. The following is a statement of reasons for the indication of allowable subject matter: Claims 7 and 8 are considered to be allowable because the prior art does not teach or suggest the specified compounds. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Hatakeyama et al. (US 2020/0089112 A1) disclose a chemically amplified resist composition comprising a sulfonium salt quencher that helps reduce line width roughness of line patterns when the resist composition is photolithographically patterned. Any inquiry concerning this communication or earlier communications from the examiner should be directed to STEWART A FRASER whose telephone number is (571)270-5126. The examiner can normally be reached M-F, 7am-4pm, EST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Miriam Stagg can be reached at 571-270-5256. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /STEWART A FRASER/Primary Examiner, Art Unit 1724
Read full office action

Prosecution Timeline

Dec 27, 2023
Application Filed
Jul 29, 2026
Non-Final Rejection mailed — §102, §103 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
86%
Grant Probability
99%
With Interview (+14.3%)
2y 5m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1357 resolved cases by this examiner. Grant probability derived from career allowance rate.

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