DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Election/Restrictions
Applicant's election with traverse of claims 25-32 in the reply filed on 6/11/26 is acknowledged. The traversal is on the ground(s) that SEE ELECTION DATED 6/11/26. This is not found persuasive because the consideration (interpretation and weight assignment) and searches of device and process inventions are not coextensive.
The requirement is still deemed proper and is therefore made FINAL.
Claim Rejections - 35 USC § 112
The following is a quotation of 35 U.S.C. 112(b):
(b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention.
The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph:
The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention.
Claim 25 recites the limitation "the bonded single crystal silicon substrate" in lines 7-8. There is insufficient antecedent basis for this limitation in the claim.
Claims 25-32 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention.
Claim 25, lines 3-4, it is unclear how the composite substrate is prepared with multiple layers and a single crystal silicon substrate, thus claim is indefinite. Further, it is unclear what multiple layers are being referred to, thus claim is indefinite.
Claim 25, lines 7-8, it is unclear how the single crystal silicon layer is formed by thinning the bonded single crystal silicon substrate, thus claim is indefinite. Further, it is unclear what the difference between the single crystal silicon layer and the single crystal silicon substrate is, thus claim is indefinite.
Claim 25, lines 9-11, it is unclear how an edge portion of the silicon oxide and the single crystal silicon layer are formed to have the entire central flat surface of the silicon oxide layer is covered with the single crystal silicon layer, thus claim is indefinite.
claim 25, lines 12-14, it is unclear if “an AlN film” on line 12 is different or the same as “an AlN film” on line 13, thus claim is indefinite.
Claim 26, line 2, it is unclear what are being chamfered, thus claim indefinite.
Examiner’s Cited References
The cited references generally show the similar or related process including forming a silicon oxide layer on a substrate, forming a single crystalline silicon layer on the entire area of the silicon oxide layer, forming a semiconductor nitride layer on the crystalline silicon layer, forming another semiconductor nitride on the semiconductor nitride layer as presently claimed by applicant.
Conclusion
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LONG . PHAM
Examiner
Art Unit 2823
/LONG PHAM/Primary Examiner, Art Unit 2897
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