Prosecution Insights
Last updated: October 01, 2026
Application No. 18/590,746

DEUTERIUM-TREATED FERROELECTRIC DEVICES AND METHODS FOR FABRICATING THE SAME

Non-Final OA §102
Filed
Feb 28, 2024
Examiner
CHANG, JAY C
Art Unit
2817
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
TetraMem Inc.
OA Round
1 (Non-Final)
85%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
99%
With Interview

Examiner Intelligence

Grants 85% — above average
85%
Career Allowance Rate
582 granted / 682 resolved
+17.3% vs TC avg
Moderate +14% lift
Without
With
+13.9%
Interview Lift
resolved cases with interview
Typical timeline
2y 3m
Avg Prosecution
30 currently pending
Career history
705
Total Applications
across all art units

Statute-Specific Performance

§101
0.5%
-39.5% vs TC avg
§103
41.6%
+1.6% vs TC avg
§102
28.2%
-11.8% vs TC avg
§112
27.7%
-12.3% vs TC avg
Black line = Tech Center average estimate • Based on career data from 682 resolved cases

Office Action

§102
DETAILED ACTION The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . This action is responsive to the following communications: the Amendment filed 7/20/2026. Claims 1-9 are pending. Claims 10-20 are cancelled. Information Disclosure Statement The information disclosure statements (IDS) submitted on 5/28/2024, 6/2/2025 and 3/12/2026 are in compliance with the provisions of 37 CFR 1.97. Accordingly, the information disclosure statements are being considered by the examiner. Election/Restrictions Applicant’s election without traverse of Invention I in the reply filed on 7/20/2026 is acknowledged. Claims 10-20, which have been canceled, were drawn to a nonelected Invention, there being no allowable generic or linking claim. Election was made without traverse in the reply filed on 7/20/2026. Claim Objections Claim 2 is objected to because of the following informalities: Claim 2 recites the limitation “the metal oxide” in line 2 of the claim, which the Examiner suggests amending to “the deuterium-treated metal oxide”, because it appears the claimed element was originally introduced using that specific language. Appropriate correction is required. Claim Rejections - 35 USC § 102 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1-2 and 5 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Liu (US 2018/0366547 A1). Regarding independent claim 1, Figure 1 of Liu discloses an apparatus, comprising: a first electrode 101/102 (collectively 101 “source region” and 102 “drain region”- ¶0033, which are conductive during operation and thereby are considered an electrode); a ferroelectric layer 12 (“charge storage structure”- ¶0033) fabricated on the first electrode 101/102, wherein the ferroelectric layer 12 comprises a ferroelectric material and deuterium, which formed by performing heat treatment in a deuterium atmosphere, which would inherently lead to deuterium diffusing into structure 12 (¶¶0076, 0096-0097); and a second electrode 11 (“gate conductive layer”- ¶0033) fabricated on the ferroelectric layer 12. Regarding claim 2, Figure 1 of Liu discloses wherein the ferroelectric material comprises a deuterium-treated metal oxide, and wherein the metal oxide comprises at least one of hafnium oxide (HfO2), zirconium oxide (ZrO2), zirconium-doped hafnium oxide (Hfi-xZrx02 with x ranging from 0 to 1), scandium-doped aluminum nitride (Ali-xScxN with x>0.3), titanates (BaTiO3), niobates (LiNbO3), or tantalates (NaTaO3) (¶¶0076, 0081). Regarding claim 5, Figure 1 of Liu discloses wherein the second electrode 11 comprises at least one of tungsten, ruthenium, molybdenum, titanium nitride, tantalum nitride, tungsten nitride, platinum, palladium, or iridium (¶0038). Allowable Subject Matter Claims 3-4 and 6-9 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Regarding claim 3, the prior art of record including Liu, either singularly or in combination, does not disclose or suggest the combination of limitations including, but not limited to, “wherein the ferroelectric material is interstitially doped with at least one interstitial dopant, and wherein the at least one interstitial dopant comprises at least one of H, N, C, B, or F”. Regarding claim 4, the prior art of record including Liu, either singularly or in combination, does not disclose or suggest the combination of limitations including, but not limited to, “wherein the first electrode comprises at least one of tungsten, ruthenium, molybdenum, titanium nitride, tantalum nitride, tungsten nitride, platinum, palladium, or iridium”. Regarding claim 6 (which claim 7-9 depend from), the prior art of record including Liu, either singularly or in combination, does not disclose or suggest the combination of limitations including, but not limited to, “[the] apparatus… further comprising a first connection pad, wherein the first electrode is fabricated on the first connection pad, and wherein the first connection pad comprises a conductive material”. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure: Makala et al. (US 2021/0408019 A1), which discloses an apparatus comprising a ferroelectric layer between electrodes. Any inquiry concerning this communication or earlier communications from the examiner should be directed to JAY C CHANG whose telephone number is (571)272-6132. The examiner can normally be reached Mon- Fri 12pm-10pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Eliseo Ramos-Feliciano can be reached at (571)-272-7925. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /JAY C CHANG/Primary Examiner, Art Unit 2817
Read full office action

Prosecution Timeline

Feb 28, 2024
Application Filed
Aug 19, 2026
Non-Final Rejection mailed — §102 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12751314
DIE PACKAGE STRUCTURE AND METHOD FOR FORMING THE SAME
3y 7m to grant Granted Sep 29, 2026
Patent 12751113
SEMICONDUCTOR DEVICE
2y 11m to grant Granted Sep 29, 2026
Patent 12751279
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE
3y 0m to grant Granted Sep 29, 2026
Patent 12745667
ELECTRONIC CIRCUIT PACKAGE, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE HAVING ELECTRONIC CIRCUIT PACKAGE
3y 5m to grant Granted Sep 22, 2026
Patent 12740435
METHOD OF MANUFACTURING AN INTERPOSER PRODUCT
3y 4m to grant Granted Sep 15, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

Strategy Recommendation AI-generated — please review before filing

Get a prosecution strategy drawn from examiner precedents, rejection analysis, and claim mapping.
Typically takes 5-10 seconds — AI-generated, attorney review required before filing

Prosecution Projections

1-2
Expected OA Rounds
85%
Grant Probability
99%
With Interview (+13.9%)
2y 3m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 682 resolved cases by this examiner. Grant probability derived from career allowance rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month