11 pending office actions • 9 art units • 11 examiners • 0 of 11 (0%) have an AI response strategy ready • 21 patents granted in the last 365 days
Based on the USPTO statutory response window for each pending office action. 6 of the docket's apps have a known mailing date; the rest are excluded from the tile counts.
Every pending office action with a known statutory deadline, placed on a days-until-due axis. Dots left of Today are overdue; the further right, the more runway. Cases that share a deadline window stack vertically. 6 of the docket's apps have a known mailing date.
Difficulty is derived from the rejection statutes on the most recent pending office action. §101-driven and multi-statute cases are graded Hard; §112-only and obviousness-type double-patenting cases are graded Easy; everything else is Medium. "Unknown" means we have not yet parsed a statute for that office action.
| Bucket | Cases |
|---|---|
| §103 only | 5 (45%) |
| §112 only | 2 (18%) |
| Multi-statute (no §101) | 4 (36%) |
How the docket's pending cases split across USPTO tech-center bands.
Manual office-action response work runs about 10 hours per case. The time-saved bands below show what IP Author's prosecution pipeline typically delivers — a conservative 20% on the low end, 35% in the middle, 50% on the high end.
| Examiner | Apps on this docket | Allow rate | Interview lift |
|---|---|---|---|
| BERHAN, AHMED A | 1 | 87.5% | +11.4% |
| FLECK, LINDA JOAN | 1 | 78.2% | +18.6% |
| BOOTH, RICHARD A | 1 | 85.7% | +8.3% |
| SHEKER, RHYS PONIENTE | 1 | 82.0% | +7.5% |
| NGUYEN, VAN THU T | 1 | 82.8% | +6.5% |
| CHEN, PATRICK C | 1 | 82.4% | +9.5% |
| KARAVIAS, DENISE R | 1 | 63.1% | +32.1% |
| PAYEN, MARVIN | 1 | 77.3% | +2.8% |
| LIU, BENJAMIN T | 1 | 74.9% | +12.2% |
| ENAD, CHRISTINE A | 1 | 84.3% | +10.3% |
Cases in front of an examiner with an allow rate of 80%+ where the difficulty is Easy or Medium. The top 3 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18156171 | VOLTAGE DIVIDER CIRCUITS UTILIZING NON-VOLATILE MEMORY DEVICES | CHEN, PATRICK C | 146d overdue |
| 19081618 | INTEGRATED SENSING AND MACHINE LEARNING PROCESSING DEVICES | BERHAN, AHMED A | — |
| 18499596 | RESISTIVE RANDOM-ACCESS MEMORY (RRAM) DEVICES WITH DOPED SWITCHING OXIDES | SHEKER, RHYS PONIENTE | — |
Multi-statute / §101-driven matters, or cases in front of an examiner with an allow rate under 30%. The top 4 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 16366996 | REDUCING CELL-TO-CELL SWITCH VARIATION IN CROSSBAR ARRAY CIRCUITS | ENAD, CHRISTINE A | 2191d overdue |
| 18430511 | FERROELECTRIC MEMORY DEVICES WITH A THREE-DIMENSIONAL TOPOGRAPHY STRUCTURE | FLECK, LINDA JOAN | — |
| 18510346 | DEUTERIUM-TREATED RESISTIVE RANDOM-ACCESS MEMORY (RRAM) DEVICES | BOOTH, RICHARD A | — |
| 18456452 | BIT-SERIAL INPUT SCHEMES FOR CROSSBAR CIRCUITS | NGUYEN, VAN THU T | — |
Cases in front of an examiner whose interview lift is 10 percentage points or more — i.e. interviewed cases historically resolve more favorably than non-interviewed ones. The top 5 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 16366996 | REDUCING CELL-TO-CELL SWITCH VARIATION IN CROSSBAR ARRAY CIRCUITS | ENAD, CHRISTINE A | 2191d overdue |
| 17508660 | PATTERNING OXIDATION RESISTANT ELECTRODE IN CROSSBAR ARRAY CIRCUITS | LIU, BENJAMIN T | 121d overdue |
| 17932432 | INTEGRATED SENSING AND MACHINE LEARNING PROCESSING DEVICES | KARAVIAS, DENISE R | 22d |
| 19081618 | INTEGRATED SENSING AND MACHINE LEARNING PROCESSING DEVICES | BERHAN, AHMED A | — |
| 18430511 | FERROELECTRIC MEMORY DEVICES WITH A THREE-DIMENSIONAL TOPOGRAPHY STRUCTURE | FLECK, LINDA JOAN | — |
| Art Unit | Apps |
|---|---|
| 2812 | 2 |
| 2813 | 1 |
| 2824 | 1 |
| 2842 | 1 |
| 2857 | 1 |
| 2899 | 1 |
| 2893 | 1 |
| 2811 | 1 |
| 2827 | 1 |
| App # | Title | Examiner | Art Unit | Statutes | Status | Due in | AI | Filed |
|---|---|---|---|---|---|---|---|---|
| 19081618 | INTEGRATED SENSING AND MACHINE LEARNING PROCESSING DEVICES | BERHAN, AHMED A | — | §103 | Non-Final OA | — | Pending | Mar 17, 2025 |
| 18430511 | FERROELECTRIC MEMORY DEVICES WITH A THREE-DIMENSIONAL TOPOGRAPHY STRUCTURE | FLECK, LINDA JOAN | 2812 | §102§103§112 | Non-Final OA | — | Pending | Feb 01, 2024 |
| 18510346 | DEUTERIUM-TREATED RESISTIVE RANDOM-ACCESS MEMORY (RRAM) DEVICES | BOOTH, RICHARD A | 2812 | §102§103 | Non-Final OA | — | Pending | Nov 15, 2023 |
| 18499596 | RESISTIVE RANDOM-ACCESS MEMORY (RRAM) DEVICES WITH DOPED SWITCHING OXIDES | SHEKER, RHYS PONIENTE | 2813 | §103 | Non-Final OA | — | Pending | Nov 01, 2023 |
| 18456452 | BIT-SERIAL INPUT SCHEMES FOR CROSSBAR CIRCUITS | NGUYEN, VAN THU T | 2824 | §103§112 | Non-Final OA | — | Pending | Aug 25, 2023 |
| 18156171 | VOLTAGE DIVIDER CIRCUITS UTILIZING NON-VOLATILE MEMORY DEVICES | CHEN, PATRICK C | 2842 | §103 | Non-Final OA | 146d overdue | Pending | Jan 18, 2023 |
| 17932432 | INTEGRATED SENSING AND MACHINE LEARNING PROCESSING DEVICES | KARAVIAS, DENISE R | 2857 | §103Other | Final Rejection | 22d | Pending | Sep 15, 2022 |
| 17848238 | CMOS-COMPATIBLE RRAM DEVICES | PAYEN, MARVIN | 2899 | §112 | Non-Final OA | 14d | Pending | Jun 23, 2022 |
| 17508660 | PATTERNING OXIDATION RESISTANT ELECTRODE IN CROSSBAR ARRAY CIRCUITS | LIU, BENJAMIN T | 2893 | §103 | Final Rejection | 121d overdue | Pending | Oct 22, 2021 |
| 16366996 | REDUCING CELL-TO-CELL SWITCH VARIATION IN CROSSBAR ARRAY CIRCUITS | ENAD, CHRISTINE A | 2811 | §103§112 | Non-Final OA | 2191d overdue | Pending | Mar 27, 2019 |
| 16218786 | IMPLEMENTING PHASE CHANGE MATERIAL-BASED SELECTORS IN A CROSSBAR ARRAY | NGUYEN, VIET Q | 2827 | §112 | Non-Final OA | 2225d overdue | Pending | Dec 13, 2018 |
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