Prosecution Insights
Last updated: July 17, 2026
Application No. 18/593,364

Treating the Dielectric Films Under the Bottoms of Source/Drain Regions

Non-Final OA
Filed
Mar 01, 2024
Priority
Dec 18, 2023 — provisional 63/611,350
Examiner
SMITH, SAMUEL JONATHAN
Art Unit
2817
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Taiwan Semiconductor Manufacturing Company, Ltd.
OA Round
1 (Non-Final)
82%
Grant Probability
Favorable
1-2
OA Rounds
1y 1m
Est. Remaining
87%
With Interview

Examiner Intelligence

Grants 82% — above average
82%
Career Allowance Rate
37 granted / 45 resolved
+14.2% vs TC avg
Moderate +5% lift
Without
With
+5.1%
Interview Lift
resolved cases with interview
Typical timeline
3y 5m
Avg Prosecution
20 currently pending
Career history
60
Total Applications
across all art units

Statute-Specific Performance

§103
77.6%
+37.6% vs TC avg
§102
17.8%
-22.2% vs TC avg
§112
4.0%
-36.0% vs TC avg
Black line = Tech Center average estimate • Based on career data from 45 resolved cases

Prosecution Timeline

Mar 01, 2024
Application Filed
Aug 26, 2025
Response after Non-Final Action
May 29, 2026
Non-Final Rejection mailed (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12666982
SEMICONDUCTOR PACKAGE
3y 11m to grant Granted Jun 23, 2026
Patent 12653005
SEMICONDUCTOR DEVICE STRUCTURE WITH PATTERNS HAVING COPLANAR BOTTOM SURFACES AND METHOD FOR PREPARING THE SAME
2y 11m to grant Granted Jun 09, 2026
Patent 12648413
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
3y 4m to grant Granted Jun 02, 2026
Patent 12648275
DISPLAY APPARATUS
2y 5m to grant Granted Jun 02, 2026
Patent 12641927
LIGHT-EMITTING DEVICE AND DISPLAY PANEL
3y 0m to grant Granted May 26, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
82%
Grant Probability
87%
With Interview (+5.1%)
3y 5m (~1y 1m remaining)
Median Time to Grant
Low
PTA Risk
Based on 45 resolved cases by this examiner. Grant probability derived from career allowance rate.

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