DETAILED ACTION
This Office action responds to the application filed on 03/03/2024.
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . In the event the determination of the status of the application as subject to AIA is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for a rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
Election/Restrictions
Applicant’s election of Group 1 in the reply filed on 08/05/2026 is acknowledged. Since applicant did not explicitly elect with or without traverse in response to the restriction requirement, the election has been treated as an election without traverse (MPEP § 818.01(a)).
The applicant indicates that claims 1-15 read on the elected species. The examiner agrees. Accordingly, claims 16-20 are withdrawn from further consideration pursuant to 37 CFR 1.142(b) as being drawn to a nonelected invention, there being no allowable generic or linking claim. Claims 1-15 are pending in this Office action.
Claim Rejections - 35 USC § 102 & 103
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention.
The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action:
A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made.
Claims 1, 2, 3, 7, & 8 are rejected under 35 U.S.C. 102(a)(2) as being anticipated by Huang (US 20200176492).
Regarding Claim 1, Huang (see, e.g., figs. 2a-2d) shows an image sensor, comprising:
a plurality of first photosensing regions 104 (hereinafter “104U”, see, e.g., annotated figure 1, para.0019) and a plurality of second photosensing regions 104 (hereinafter “104L”, see, e.g., annotated figure 1, para.0019) disposed within a substrate 102 (see, e.g., annotated figure 1),
wherein the plurality of first photosensing regions and the plurality of second photosensing regions have a first conductivity type (either n-type or p-type, n-type is elected as first conductivity type, see, e.g., para.0019),
and the substrate 102 comprises a first surface 102f and a second surface 102b opposite to the first surface (see, e.g., fig. 2b);
a first deep well region 106 (see, e.g., para.0020) of a second conductivity type (“second doping type different than the first doping type” p-type is elected as second conductivity type, see, e.g., para.0020) extending from the first surface to the second surface (see, e.g., fig. 2b)
and physically separating the plurality of first photosensing regions 104U from one another (at the center of the device, see, e.g., fig. 2a, annotated figure 1),
and physically separating the plurality of second photosensing regions 104L from one another (at the center of the device, see, e.g., fig. 2a, annotated figure 1),
wherein the second conductivity type is opposite to the first conductivity type (“second doping type different than the first doping type”, see, e.g., para.0020);
a first isolation structure 124 (124 is divided into separate portions, hereinafter “124F” portion of 124 surrounding 104U & 104L, see, e.g., annotated figure 1) extending from the first surface to the second surface (see, e.g., fig. 2b)
and laterally surrounding the plurality of first photosensing regions 104U and the plurality of second photosensing regions 104L (see, e.g., annotated figure 1);
and second isolation structures 124 (hereinafter “124S”, comprises 124a shown in fig. 2c along line C-C’ of fig. 2a, see, e.g., annotated figure 1) extending from the first surface to the second surface,
and disposed in between the plurality of first photosensing regions 104U and the plurality of second photosensing regions 104L.
PNG
media_image1.png
622
1164
media_image1.png
Greyscale
Regarding Claim 2, Huang shows the image sensor according to claim 1,
wherein the second isolation structures 124S are physically joined with the first isolation structure 124F (124S & 124F are joined since they are formed from 124).
Regarding Claim 3, Huang shows the image sensor according to claim 2,
wherein the second isolation structures 124S (portions 124a of 124S touch 106 as shown in fig. 2c) are contacting sidewalls of the first deep well region (see, e.g., fig. 2c).
Regarding Claim 7, Huang shows the image sensor according to claim 1, further comprising
a floating diffusion node 108 (see, e.g., para.0026) disposed in the substrate 102 and located in between the second isolation structures 124S (see, e.g., fig. 2c).
Regarding Claim 8, Huang shows the image sensor according to claim 1, further comprising
a first micro-lens 126c (see, e.g., para.0032) disposed on the second surface 102b of the substrate and overlapped with the plurality of first photosensing regions 104U and the first deep well region 106 (see, e.g., fig. 2c).
Claims 4 & 5 are rejected under 35 U.S.C. 103 as being unpatentable over Huang (US 20200176492) in view of Honjo (JP 2018125518).
Regarding Claim 4, Huang shows the image sensor according to claim 1, further comprising
Huang, however, fails to show
a second deep well region of the second conductive type extending from the first surface of the substrate to a first depth into the substrate,
and physically separating the plurality of first photosensing regions from the plurality of second photosensing regions,
and wherein the second deep well region has a higher doping concentration than the first deep well region.
Honjo (see, e.g., fig. 24, para.0154), in a similar device to Huang, shows a configuration wherein
a second deep well region 1541 (see, e.g., para.0154) of the second conductive type (p-type) extending from the first surface of the substrate 1518 (bottommost surface of 1541, since substrate 1518 comprises 1541 & 1516) to a first depth into the substrate (first depth at the bottom surface of 1111),
and wherein the second deep well region 1541 has a higher doping concentration than the first deep well region 1516 (see, e.g., para.0154).
Honjo (see, e.g., para.0154) teaches the configuration of the second deep well region having a higher doping concentration than the first deep well region would suppress the generation of dark currents on the semiconductor region 1520 of photodiode 1111.
The configuration of Honjo is incorporated into the device of Huang.
Huang, in view of Honjo, shows
a second deep well region 1541 (see, e.g., para.0154) of the second conductive type (p-type) extending from the first surface 102f of the substrate 102 to a first depth (below top surface of 124b) into the substrate (see, e.g., annotated figure 2),
and physically separating the plurality of first photosensing regions 104U from the plurality of second photosensing regions 104L (separating 104U & 104L as the first deep well region 106 does in Claim 1),
and wherein the second deep well region 1541 has a higher doping concentration than the first deep well region 106 (as modified by Honjo).
PNG
media_image2.png
662
1235
media_image2.png
Greyscale
It would have been obvious at the time of filing the invention to one of ordinary skill in the art to incorporate the configuration of Honjo in the device of Huang to suppress the generation of dark currents on the semiconductor region of the photodiodes.
Regarding Claim 5, Huang (see, e.g., para.0023), in view of Honjo, shows the image sensor according to claim 4, further comprising
a third isolation structure 124b (see, e.g., para.0023) extending from the second surface 102b of the substrate towards a position into the second deep well region 1541 (see, e.g., annotated figure 2).
Claims 9 & 15 are rejected under 35 U.S.C. 103 as being unpatentable over Huang (US 20200176492) in view of Ooki (US 20240258348).
Regarding Claim 9, Huang (see, e.g., figs. 2a-2d), shows an image sensor, comprising:
a substrate 102 (see, e.g., para.0019);
a first photodetector 104 (hereinafter “104.1-2”, see, e.g., annotated figure 3, para.0019) disposed within the substrate and comprising
a first sub-pixel region 104 (hereinafter “104.1”) and a second sub-pixel region 104 (hereinafter “104.2”);
a second photodetector 104 (hereinafter “104.3-4”, see, e.g., annotated figure 3) disposed within the substrate and comprising
a third sub-pixel region 104 (hereinafter “104.3”) and a fourth sub-pixel region 104 (hereinafter “104.4”),
wherein the second photodetector is physically separated from the first photodetector (physically separated by 106 & 124);
a first deep well region 106 (see, e.g., para.0020) disposed in between the first sub-pixel region 104.1 and the second sub-pixel region 104.2, and disposed in between the third sub-pixel region 104.3 and the fourth sub-pixel region 104.4 (at the center in between all sub-pixel regions 104.1-4, see, e.g., annotated figure 3),
a first isolation structure 124 (the portions of 124a that surround the first and second photodetectors, hereinafter “124F”, see, e.g., annotated figure 3, see, e.g., para.0022) laterally surrounding the first photodetector 104.1-2 and the second photodetector 104.3-4;
PNG
media_image3.png
651
1164
media_image3.png
Greyscale
Huang, however, fails to show
wherein the first deep well region comprises
a first electron interflow region allowing electrons to pass from the first sub-pixel region to the second sub-pixel region
and a second electron interflow region allowing electrons to pass from the third sub-pixel region to the fourth sub-pixel region;
a first micro-lens disposed on and overlapped with the first sub-pixel region, the second sub-pixel region, and the first deep well region;
and a second micro-lens disposed on and overlapped with the third sub-pixel region, the fourth sub-pixel region, and the first deep well region.
Ooki (see, e.g., fig. 24, para.0144, para.0148-0149, para.0170), in a similar device to Huang, shows
wherein the first deep well region 23 & 23c (see, e.g., para.0144) comprises
an interflow region 23c (see, e.g., para.0148-0149) allowing electrons to pass from the first sub-pixel region PD1 to the second sub-pixel region PD2
a micro-lens 44 (see, e.g., para.0170) disposed on and overlapped with the first sub-pixel region PD1, the second sub-pixel region PD2, and the first deep well region 23 & 23c;
Ooki (see, e.g., para.0149) states the interflow region of the first deep well region would form an overflow path and equalize accumulated charges from both the sub-pixel regions PD1 and PD2.
The electron interflow region of Ooki is incorporated into the device of Huang.
It would have been obvious at the time of filing the invention to one of ordinary skill in the art to incorporate the electron interflow region of Ooki in the device of Huang to form an overflow path and equalize accumulated charges between all of the sub-pixel regions.
Huang (see, e.g., fig. 2b, para.0036) shows a micro-lens 126c overlapping each sub-pixel region 104a & 104b and the first deep well region 106. Ooki (see, e.g., fig. 9, fig. 24, para.0170) shows an embodiment similar to Huang wherein a micro-lens 44 overlapping each sub-pixel region PD1 & PD2 and the first deep well region 23 and a configuration for a single micro-lens 44 overlapping both sub-pixel regions PD1 & PD2 and the first deep well region 23 & 23c.
The configuration of the single micro-lens for two sub-pixel regions of Ooki is incorporated into the device of Huang since there is overlap between the configurations for the micro-lens.
It would have been obvious at the time of filing the invention to one of ordinary skill in the art to incorporate the configuration of the single micro-lens for two sub-pixel regions of Ooki in the device of Huang because the combination is a simple substitution of one known configuration for another to obtain predictable results – simple substitution of one known configuration for a micro-lens over sub-pixel regions for another for which the two are provided as alternate configurations.
Huang, in view of Ooki, shows
wherein the first deep well region 106 comprises
a first electron interflow region 23c (hereinafter “23c.1-2”) allowing electrons to pass from the first sub-pixel region 104.1 to the second sub-pixel region 104.2 (see, e.g., annotated figure 4)
and a second electron interflow region (hereinafter “23c.3-4”) allowing electrons to pass from the third sub-pixel region 104.3 to the fourth sub-pixel region 104.4 (see, e.g., annotated figure 4);
a first micro-lens 44 (hereinafter “44.1-2”, see, e.g., annotated figure 4) disposed on and overlapped with the first sub-pixel region 104.1, the second sub-pixel region 104.2, and the first deep well region 106;
and a second micro-lens 44 (hereinafter “44.3-4”, see, e.g., annotated figure 4) disposed on and overlapped with the third sub-pixel region 104.3, the fourth sub-pixel region 104.4, and the first deep well region 106.
PNG
media_image4.png
825
1353
media_image4.png
Greyscale
Regarding Claim 15, Huang (see, e.g., para.0019-0020), in view of Ooki, shows the image sensor according to claim 9,
wherein the first sub-pixel region 104.1, the second sub-pixel region 104.2, the third sub-pixel region 104.3 and the fourth sub-pixel region 104.4 are n-type doped regions (first region of 104 has a first doping type either n-type or p-type, n-type is elected, see, e.g., para.0019),
and the first deep well region 106 is a p-type doped region (second doping type different than the first doping type, p-type, see, e.g., para.0019-0020).
Claim 10 is rejected under 35 U.S.C. 103 as being unpatentable over Huang (US 20200176492) in view of Ooki (US 20240258348) and further in view of Shirahige (US 20240347560).
Regarding Claim 10, Huang, in view of Ooki, shows the image sensor according to claim 9,
Huang, in view of Ooki, however, fails to show
wherein the first electron interflow region comprises
a plurality of electron interflow sub-regions allowing electrons to pass from the first sub-pixel region to the second sub-pixel region,
wherein the plurality of electron interflow sub-regions are regions having a lowest doping concentration in the first deep well region.
Shirahige (see, e.g., fig. 3b, para.0039-0040), in a similar device to Huang, in view of Ooki, shows a configuration wherein
wherein the first electron interflow region 301 comprises
a plurality of electron interflow sub-regions 301 (two regions on the left and right of 207, see, e.g., fig. 3b) allowing electrons to pass from the first semiconductor region 202 of sub-pixel region (201-202 & 205-206 of the photoelectric conversion unit of fig. 3b) to the second semiconductor region 201 of sub-pixel region (201-202 & 205-206),
wherein the plurality of electron interflow sub-regions 301 are regions having a lowest doping concentration in the third semiconductor region 203 (“the transport path 301 may be a semiconductor region of the second conductivity type having a lower impurity concentration than the impurity concentration of the third semiconductor region 203 of the second conductivity type” see, e.g., para.0040).
Shirahige (see, e.g., para.0040) states the configuration of a plurality of electron interflow regions having the lowest doping concentration in a semiconductor region would facilitate the transfer of charges between semiconductor regions of sub-pixel regions.
The configuration of Shirahige is incorporated into the device of Huang, in view of Ooki.
Huang, in view of Ooki and further in view of Shirahige, shows
wherein the first electron interflow region 23c.1-2 comprises
a plurality of electron interflow sub-regions 301 allowing electrons to pass from the first sub-pixel region 104.1 to the second sub-pixel region 104.2 (see, e.g., annotated figure 4),
wherein the plurality of electron interflow sub-regions 301 are regions having a lowest doping concentration in the first deep well region 106.
It would have been obvious at the time of filing the invention to one of ordinary skill in the art to incorporate the configuration of Shirahige in the device of Huang, in view of Ooki, to facilitate the transfer of charges between semiconductor regions of sub-pixel regions.
Claims 11, 12, & 14 are rejected under 35 U.S.C. 103 as being unpatentable over Huang (US 20200176492) in view of Ooki (US 20240258348) and further in view of Honjo (JP 2018125518).
Regarding Claim 11, Huang, in view of Ooki, The image sensor according to claim 9, further comprising
Huang, in view of Ooki, however, fails to show
a second deep well region physically separating the first sub-pixel region and the second sub-pixel region from the third sub-pixel region and the fourth sub-pixel region,
wherein the second deep well region has a higher doping concentration than the first deep well region.
Honjo (see, e.g., fig. 24, para.0154), in a similar device to Huang, shows a configuration wherein
a second deep well region 1541 (see, e.g., para.0154)
wherein the second deep well region 1541 has a higher doping concentration than the first deep well region 1516 (see, e.g., para.0154).
Honjo (see, e.g., para.0154) teaches the configuration of the second deep well region having a higher doping concentration than the first deep well region would suppress the generation of dark currents on the semiconductor regions of photodiodes otherwise known as sub-pixel regions.
The configuration of Honjo is incorporated into the device of Huang, in view of Ooki.
Huang, in view of Ooki and further in view of Honjo, shows
a second deep well region 1541 physically separating the first sub-pixel region 104.1 and the second sub-pixel region 104.2 from the third sub-pixel region 104.3 and the fourth sub-pixel region 104.4 (1541 is formed in 106 which physically separates all sub-pixel regions 104.1-4 as in Claim 9 and as shown in fig. 2a, see, e.g., annotated figure 5),
wherein the second deep well region 1541 has a higher doping concentration than the first deep well region 106 (as modified by Honjo).
PNG
media_image5.png
952
1235
media_image5.png
Greyscale
Regarding Claim 12, Huang (see, e.g., fig. 2c, para.0023), in view of Ooki and further in view of Honjo, shows the image sensor according to claim 11, further comprising
an auxiliary isolation structure 124b (see, e.g., para.0023) physically separating the first sub-pixel region 104.1 and the second sub-pixel region 104.2 from the third sub-pixel region 104.3 and the fourth sub-pixel region 104.4 (physically separates respective regions at the center of the image sensor, see, e.g., fig. 2c),
wherein the auxiliary isolation structure 124b is joined to the second deep well region 1541 (see, e.g., annotated figure 5),
and a height of the auxiliary isolation structure 124b is smaller than a height of the first isolation structure 124F (fig. 2c, along line C-C’ of fig. 2a, shows the height of portions 124a in the middle of the image sensor, and the height of portions 124a also corresponds to the surrounding portion 124F.Therefore, the 124b having a smaller height than 124a means 124b has a smaller height than 124F).
Regarding Claim 14, Huang (see, e.g., para.0026), in view of Ooki and further in view of Honjo, shows the image sensor according to claim 12, further comprising
a floating diffusion node 108 (see, e.g., para.0026) embedded in the second deep well region 1541 and overlapped with the auxiliary isolation structure 124b (see, e.g., annotated figure 5).
Allowable Subject Matter
Claims 6 &13 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims.
Conclusion
Any inquiry concerning this communication or earlier communications from the examiner should be directed to FERNANDO JOSE RAMOS-DIAZ whose telephone number is (571) 270-5855. The examiner can normally be reached Mon-Fri 8am-5pm.
If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Steven Loke can be reached on 571-272-1657. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000.
/F.R.D./ Examiner, Art Unit 2818
Examiner, Art Unit 2818
/STEVEN H LOKE/Supervisory Patent Examiner, Art Unit 2818
Prosecution Insights