Prosecution Insights
Last updated: August 17, 2026
Application No. 18/597,966

SEMICONDUCTOR DEVICES HAVING A PATTERNED CONTACT

Non-Final OA §112
Filed
Mar 07, 2024
Examiner
RAMALLO, GUSTAVO G
Art Unit
2812
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Taiwan Semiconductor Manufacturing Company, Ltd.
OA Round
1 (Non-Final)
95%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
98%
With Interview

Examiner Intelligence

Grants 95% — above average
95%
Career Allowance Rate
550 granted / 578 resolved
+27.2% vs TC avg
Minimal +2% lift
Without
With
+2.4%
Interview Lift
resolved cases with interview
Typical timeline
2y 3m
Avg Prosecution
29 currently pending
Career history
590
Total Applications
across all art units

Statute-Specific Performance

§101
0.2%
-39.8% vs TC avg
§103
53.5%
+13.5% vs TC avg
§102
29.0%
-11.0% vs TC avg
§112
14.5%
-25.5% vs TC avg
Black line = Tech Center average estimate • Based on career data from 578 resolved cases

Office Action

§112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election without traverse of Device Embodiment 2 (Fig. 2, claims 1-20) in the reply filed on July 27, 2026 is acknowledged. Specification The title of the invention is not descriptive. A new title is required that is clearly indicative of the invention to which the claims are directed. The following title is suggested: Semiconductor Devices Having a Patterned Contact For Optimal Resistance Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 1-20 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Claim 1, lines: 3-4 recite the limitation “one or more dummy gate segments disposed on the first surface of the substrate and extending in parallel” It is unclear whether the one or more dummy gate segments are meant to extend in parallel to each other, the surface of the substrate, or another element. For purposes of examination this will be interpreted as “one or more dummy gate segments disposed on the first surface of the substrate and extending in parallel to one another” Claim 8 recites the limitation "the power supply" in line 7. There is insufficient antecedent basis for this limitation in the claim. For purposes of examination this will be interpreted as “a power supply.” Claim 16, lines: 3-4 recite the limitation “one or more dummy gate segments disposed on the first surface of the substrate and extending in parallel” It is unclear whether the one or more dummy gate segments are meant to extend in parallel to each other, the surface of the substrate, or another element. For purposes of examination this will be interpreted as “one or more dummy gate segments disposed on the first surface of the substrate and extending in parallel to one another” Allowable Subject Matter Claims 1-20 would be allowed if rewritten to overcome the 112 rejection above. The following is a statement of reasons for the indication of allowable subject matter: the closest prior art of record, Wang (US 2024/0414906), Hiremath (US 2024/02663432), fail to disclose (by themselves or in combination) the following limitations in combination with the rest of the claim: Regarding Claim 1 (from which claims 2-7 depend), a backside conductive via penetrating from the second surface to the first surface of the substrate, and connected to the first contact; and a first conductive segment and a second conductive segment disposed on and extending perpendicular to the one or more dummy gate segments… Regarding Claim 8 (from which claims 9-15 depend), wherein the first portion extends perpendicular to the first direction and the second portion extends perpendicular to the first portion. Regarding Claim 16 (from which claims 17-20 depend), wherein the first contact includes a first portion and a second portion adjacent to the first portion, wherein a width of the second portion is less than a width of the first portion. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Wang (US 2024/0414906) discloses (Fig. 2) a substrate 12, dummy gates 20 on 12, contacts 16 on 12 and across some of 20, a backside contact via BMLI connected to 16. Wang does not disclose a first conductive segment and a second conductive segment disposed on and extending perpendicular to the one or more dummy gate segments. Hiremath (US 2024/02663432) discloses (Fig. 2A) with dummy gates 212 and 214, source/drain contact 252, first and second conductive segments 230/235 extending perpendicular to dummy gates 21/214, where the contact 252 is connected to 230 and 235. Hiremath does not disclose a backside conductive via penetrating from the second surface to the first surface of the substrate, and connected to the first contact; and the first contact across at least one of the one or more dummy gate segments. Any inquiry concerning this communication or earlier communications from the examiner should be directed to GUSTAVO G RAMALLO whose telephone number is (571)272-9227. The examiner can normally be reached Monday-Friday 10am - 6pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, William Partridge can be reached at (571) 270-1402. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /GUSTAVO G RAMALLO/Examiner, Art Unit 2812
Read full office action

Prosecution Timeline

Mar 07, 2024
Application Filed
Aug 06, 2026
Non-Final Rejection mailed — §112 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12706146
NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
3y 2m to grant Granted Aug 11, 2026
Patent 12706131
STAIRCASE BRIDGE STRUCTURES FOR WORD LINE CONTACTS IN THREE-DIMENSIONAL MEMORY
3y 1m to grant Granted Aug 11, 2026
Patent 12707638
THREE-DIMENSIONAL MEMORY DEVICE WITH THROUGH-STACK CONTACT VIA STRUCTURES AND METHOD OF MAKING THE SAME
3y 0m to grant Granted Aug 11, 2026
Patent 12707999
INTEGRATED CIRCUIT DEVICE
2y 2m to grant Granted Aug 11, 2026
Patent 12701707
MEMORY DEVICE CONTAINING TSG DECK AND METHOD OF FORMING THE SAME
3y 2m to grant Granted Aug 04, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
95%
Grant Probability
98%
With Interview (+2.4%)
2y 3m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 578 resolved cases by this examiner. Grant probability derived from career allowance rate.

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