Tech Center 2800 • Art Units: 2622 2812 2819 2826
This examiner grants 95% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18341066 | VERTICAL NON-VOLATILE MEMORY DEVICES AND METHODS FOR MANUFACTURING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18210729 | SEMICONDUCTOR DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18206785 | THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18453190 | METHOD OF FABRICATING DISPLAY PANEL | Non-Final OA | Samsung Display Co., LTD. |
| 18344227 | MEMORY DEVICE INCLUDING ALUMINUM NITRIDE DIFFUSION BARRIER LAYER AND METHODS FOR FORMING THE SAME | Non-Final OA | WESTERN DIGITAL TECHNOLOGIES, INC., |
| 18314862 | LOGIC CIRCUITS USING VERTICAL TRANSISTORS WITH BACKSIDE SOURCE OR DRAIN REGIONS | Non-Final OA | Intel Corporation |
| 18234572 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PACKAGE STRUCTURE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18356033 | MEMORY DEVICE AND METHOD OF MANUFACTURING MEMORY DEVICE | Non-Final OA | SK hynix Inc. |
| 18354289 | MEMORY DEVICE AND METHOD OF MANUFACTURING THE MEMORY DEVICE | Non-Final OA | SK hynix Inc. |
| 18192643 | SEMICONDUCTOR DEVICE INCLUDING CONNECTION PORTION BETWEEN STACKED STRUCTURES AND METHOD OF FABRICATING THE SAME | Non-Final OA | SK hynix Inc. |
| 18175541 | MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME | Final Rejection | SK hynix Inc. |
| 18114878 | MEMORY DEVICE AND MANUFACTURING METHOD OF THE MEMORY DEVICE | Non-Final OA | SK hynix Inc. |
| 17978319 | SEMICONDUCTOR MEMORY DEVICE WITH SUPPORT STRUCTURES | Non-Final OA | SK hynix Inc. |
| 18296222 | THREE-DIMENSIONAL MEMORY DEVICES | Non-Final OA | Yangtze Memory Technologies Co., Ltd. |
| 18448467 | SEMICONDUCTOR FIN WITH DIVOTS, TRANSISTOR INCLUDING THE SEMICONDUCTOR FIN, MEMORY CELL INCLUDING THE TRANSISTOR, AND ASSOCIATED METHODS | Non-Final OA | GlobalFoundries U.S. Inc. |
| 18352752 | STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY FORMING REPLACEMENT WORD LINES THROUGH MEMORY OPENINGS | Non-Final OA | SANDISK TECHNOLOGIES LLC |
| 18042754 | NOR-TYPE MEMORY DEVICE, METHOD OF MANUFACTURING NOR-TYPE MEMORY DEVICE, AND ELECTRONIC APPARATUS INCLUDING MEMORY DEVICE | Final Rejection | INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES |
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