Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2622 2812 2819 2826
This examiner grants 95% of resolved cases
Gustavo G. Ramallo serves in Art Unit 2622 of Tech Center 2800. The examiner has 583 resolved cases and an allowance rate of 95.2 percent. The median time to allowance is 847 days. These metrics indicate a very favorable and efficient prosecution environment, where almost all applications reach a grant within a relatively short timeframe in Art Unit 2622.
The interview lift is 2.4 percent. Given the high 95.2 percent allowance rate, interviews have a minimal impact on the final outcome. Practitioners should focus on high-quality written submissions, as the 2.4 percent lift suggests that verbal discussion is rarely necessary to secure a grant. The 847-day median pendency is a reliable benchmark for applications in this unit. The 583 resolved cases provide a strong statistical foundation for these observations, suggesting that the standard prosecution process is highly effective with this examiner.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18637013 | INTEGRATED CIRCUIT INCLUDING READ ONLY MEMORY (ROM) CELL | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18839799 | Light-Emitting Substrate and Manufacturing Method Therefor, Backlight Module, and Display Apparatus | Non-Final OA | BOE TECHNOLOGY GROUP CO., LTD. |
| 18453082 | DISPLAY DEVICE | Non-Final OA | Samsung Display Co., LTD. |
| 18827150 | LIGHT EMITTING ELEMENT | Non-Final OA | NICHIA CORPORATION |
| 18797747 | METHOD FOR PRODUCING A POWER COMPONENT BASED ON A WIDE BANDGAP SEMICONDUCTOR AND A POWER COMPONENT | Non-Final OA | Robert Bosch GmbH |
| 18656799 | SELECTIVE DEPOSITION OF A MATERIAL COMPRISING SILICON AND NITROGEN | Non-Final OA | ASM IP Holding B.V. |
| 18838789 | TREATMENT METHOD OF POWER SEMICONDUCTOR MODULE | Non-Final OA | MITSUBISHI ELECTRIC CORPORATION |
| 18695963 | IMAGING DEVICE | Final Rejection | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18455988 | THREE-DIMENSIONAL MEMORY DEVICE WITH THROUGH-STACK CONTACT VIA STRUCTURES AND METHOD OF MAKING THE SAME | Non-Final OA | WESTERN DIGITAL TECHNOLOGIES, INC., |
| 18345839 | SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | SK hynix Inc. |
| 18590867 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR STORAGE DEVICE | Non-Final OA | Kioxia Corporation |
| 18791308 | MEHTOD OF MAKING SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED INTERCONNECT STRUCTURE | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18597966 | SEMICONDUCTOR DEVICES HAVING A PATTERNED CONTACT | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
| 18788312 | NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR | Non-Final OA | ROHM CO., LTD. |
| 18777584 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | Non-Final OA | United Microelectronics Corp. |
| 18416854 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | Final Rejection | UNITED MICROELECTRONICS CORP. |
| 18531722 | RRAM STRUCTURE AND FABRICATING METHOD OF THE SAME | Final Rejection | UNITED MICROELECTRONICS CORP |
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