Prosecution Insights
Last updated: July 05, 2026
Application No. 18/611,370

PLASMA ETCH-DEPOSITION PROCESSES AND SYSTEMS

Non-Final OA §112
Filed
Mar 20, 2024
Examiner
ALANKO, ANITA KAREN
Art Unit
1713
Tech Center
1700 — Chemical & Materials Engineering
Assignee
Tokyo Electron Limited
OA Round
1 (Non-Final)
70%
Grant Probability
Favorable
1-2
OA Rounds
8m
Est. Remaining
52%
With Interview

Examiner Intelligence

Grants 70% — above average
70%
Career Allowance Rate
479 granted / 689 resolved
+4.5% vs TC avg
Minimal -17% lift
Without
With
+-17.4%
Interview Lift
resolved cases with interview
Typical timeline
2y 12m
Avg Prosecution
35 currently pending
Career history
726
Total Applications
across all art units

Statute-Specific Performance

§101
0.6%
-39.4% vs TC avg
§103
67.3%
+27.3% vs TC avg
§102
9.9%
-30.1% vs TC avg
§112
9.8%
-30.2% vs TC avg
Black line = Tech Center average estimate • Based on career data from 689 resolved cases

Office Action

§112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election of Group I in the reply filed on March 9, 2026, is acknowledged. Because applicant did not distinctly and specifically point out the supposed errors in the restriction requirement, the election has been treated as an election without traverse (MPEP § 818.01(a)). Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 1-11 and 21-23 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. In claim 1, line 5, the term “a patterned substrate” and in claim 21, line 5, the “a patterned substrate” lack proper antecedent basis. Is this different from the patterned substrate recited in line 3? In claim 23, lines 1-2, the phrase “wherein the plasma processing chamber comprises a first electrode and a second electrode” renders the claim indefinite because the base claim already describes a bottom electrode and a sacrificial electrode (claim 21, lines 3-4). It is unclear whether the first and second electrodes are different from the bottom and sacrificial electrodes. This rejection would be overcome by simply deleting the phrase. Claims 2-11 and 22 fail to cure the indefiniteness of the base claim and are therefore also rejected. Allowable Subject Matter Claims 1 and 21 would be allowable if rewritten or amended to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action. Claims 2-11 and 22-23 would be allowable if rewritten to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action and to include all of the limitations of the base claim and any intervening claims. Claims 12-17 are allowed. The following is a statement of reasons for the indication of allowable subject matter: the prior art fails to disclose or suggest a method of processing a substrate in a plasma processing chamber, the method comprising: consuming the sacrificial electrode to deposit a blanket layer over a patterned substrate, the patterned substrate comprising a layer to be patterned, a patterned planarizing layer disposed on the layer to be patterned, and a patterned anti-reflection layer disposed over the patterned planarizing layer, the blanket layer closing gaps between adjacent patterned planarizing layer to form cavities; thinning the blanket layer to open the cavities; and extending the cavities into the layer to be patterned using a plasma etching process, as in the context of claims 12. The closest prior art, KR 2012-0041334 A discloses some elements of the claimed invention, but not all the elements of claim 12. KR ’334 discloses loading a patterned substrate (Fig. 1c); depositing a blanket layer 17, the blanket layer closing gaps (as depicted in Fig. 1e); and thinning the blanket layer (Fig. 1f). However, KR ’334 fails to disclose that the thinning opens the cavities, and then etching to extend the cavities. The prior art also fails to disclose these features of thinning and then extending the cavities by etching. Accordingly, there is no motivation to modify KR ’334 to arrive at the claimed invention, as in the context of claim 12. Remarks Examiner attempted to call applicant’s representative on April 2, 2026, to propose an examiner’s amendment. However, examiner was unable to resolve the above 35 USC 112 issues in a timely manner. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Faguet (US 7,569,491) is cited to show depositing a blanket layer 150 (Fig. 2E, col.5, lines 17-64), the blanket layer closing gaps (as depicted in Fig. 2E); and thinning the blanket layer (Fig. 2F). Liu et al (US 2006/0099824 A1) is cited to show HDPCVD to prevent formation of voids, but nonetheless discloses layers similar to the claimed invention. Lai et al (US 2003/0113997 A1) is cited to show a sealed void by an overhang formed in via hole 106 (Fig. 18). Nishimura (US 7,790,614 B2) is cited to show masking and etching to form a void 6 (Fig. 1). Any inquiry concerning this communication or earlier communications from the examiner should be directed to ANITA K ALANKO whose telephone number is (571)270-0297. The examiner can normally be reached Monday-Friday, 9 am-5pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Joshua Allen can be reached at 571-270-3176. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /ANITA K ALANKO/Primary Examiner, Art Unit 1713
Read full office action

Prosecution Timeline

Mar 20, 2024
Application Filed
Apr 09, 2026
Non-Final Rejection mailed — §112 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12648404
SEMICONDUCTOR WAFER PROCESSING METHOD
2y 9m to grant Granted Jun 02, 2026
Patent 12648380
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD USING THE SAME
2y 10m to grant Granted Jun 02, 2026
Patent 12642022
Plasma Etching
3y 5m to grant Granted May 26, 2026
Patent 12642005
CONTROL METHOD FOR SIDEWALL CONTAMINATION OF MRAM MAGNETIC TUNNEL
2y 2m to grant Granted May 26, 2026
Patent 12633498
DUTY CYCLE CONTROL TO ACHIEVE UNIFORMITY
3y 5m to grant Granted May 19, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
70%
Grant Probability
52%
With Interview (-17.4%)
2y 12m (~8m remaining)
Median Time to Grant
Low
PTA Risk
Based on 689 resolved cases by this examiner. Grant probability derived from career allowance rate.

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