Prosecution Insights
Prosecution Insights
Tech Center 3700 • Art Units: 1713 1716 1792 2874 2884 2896 3794
This examiner grants 70% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18376034 | ETCHING GAS AND ETCHING METHOD USING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18616347 | POLISHING COMPOSITIONS AND METHODS OF USE THEREOF | Final Rejection | Fujifilm Electronic Materials U.S.A., Inc. |
| 18316423 | SINGLE CRYSTAL SILICON SUBSTRATE, LIQUID DISCHARGE HEAD, AND METHOD FOR MANUFACTURING SINGLE CRYSTAL SILICON SUBSTRATE | Non-Final OA | SEIKO EPSON CORPORATION |
| 18423888 | OPTICAL SIGNAL REDIRECTION STRUCTURE FOR PHOTONICS DEVICE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18805783 | SELECTIVE ETCHING OF SILICON-AND-GERMANIUM-CONTAINING MATERIAL | Non-Final OA | Applied Materials, Inc. |
| 18115269 | PROCESSING METHODS TO IMPROVE ETCHED SILICON-AND-GERMANIUM-CONTAINING MATERIAL SURFACE ROUGHNESS | Final Rejection | Applied Materials, Inc. |
| 18112252 | TREATMENTS TO IMPROVE ETCHED SILICON-AND-GERMANIUM-CONTAINING MATERIAL SURFACE ROUGHNESS | Final Rejection | Applied Materials, Inc. |
| 18615556 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS | Non-Final OA | Research & Business Foundation SUNGKYUNKWAN UNIVERSITY |
| 18611755 | ETCHING METHOD AND PLASMA PROCESSING APPARATUS | Final Rejection | Tokyo Electron Limited |
| 18398217 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18066078 | IN-SITU DIAGNOSIS OF PLASMA SYSTEM | Non-Final OA | Tokyo Electron Limited |
| 18744715 | Semiconductor stitching structure and manufacturing method thereof | Non-Final OA | UNITED MICROELECTRONICS CORP. |
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