Prosecution Insights
Prosecution Insights
Tech Center 3700 • Art Units: 1713 1716 1792 3794
This examiner grants 70% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18640332 | SUBSTRATE PROCESSING APPARATUS AND A SUBSTRATE PROCESSING METHOD USING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18610982 | METHOD OF MANUFACTURING CHEMICAL MECHANICAL POLISHING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18376034 | ETCHING GAS AND ETCHING METHOD USING THE SAME | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18688600 | Microfabricated Multiemitter Electrospray Thrusters | Non-Final OA | The Regents of the University of California |
| 18299850 | PATTERNING PLATINUM BY ALLOYING AND ETCHING PLATINUM ALLOY | Non-Final OA | Texas Instruments Incorporated |
| 18698175 | METHOD FOR PREPARING METAL MESH AND METHOD FOR PREPARING ANTENNA | Non-Final OA | BOE Technology Group Co., Ltd. |
| 18291913 | SENSING DEVICE AND PREPARATION METHOD THEREFOR | Non-Final OA | BOE Technology Group Co., Ltd. |
| 18313607 | MASK ASSEMBLY, METHOD OF MANUFACTURING MASK ASSEMBLY, AND METHOD OF MANUFACTURING DISPLAY APPARATUS | Non-Final OA | Samsung Display Co., Ltd. |
| 18316423 | SINGLE CRYSTAL SILICON SUBSTRATE, LIQUID DISCHARGE HEAD, AND METHOD FOR MANUFACTURING SINGLE CRYSTAL SILICON SUBSTRATE | Non-Final OA | SEIKO EPSON CORPORATION |
| 17965554 | TREATMENT LIQUID, CHEMICAL MECHANICAL POLISHING METHOD, AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE | Final Rejection | FUJIFILM Corporation |
| 18391618 | CHEMICAL ETCHING METHOD USING A METAL CATALYST | Final Rejection | UIF (University Industry Foundation), Yonsei University |
| 18066078 | IN-SITU DIAGNOSIS OF PLASMA SYSTEM | Non-Final OA | Tokyo Electron Limited |
| 18607272 | COMPOSITION AND METHOD FOR SELECTIVELY ETCHING SILICON NITRIDE | Non-Final OA | ENTEGRIS, INC. |
| 18515415 | Silicon Etching Solution, Method for Treating Substrate, and Method for Manufacturing Silicon Device | Non-Final OA | Tokuyama Corporation |
| 18031801 | ETCHING GAS, METHOD FOR PRODUCING SAME, ETCHING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE | Non-Final OA | Resonac Corporation |
| 18031471 | ETCHING GAS, METHOD FOR PRODUCING SAME, ETCHING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE | Non-Final OA | Resonac Corporation |
| 18008358 | FABRICATION OF OPTICAL ELEMENTS | Non-Final OA | Board of Regents, The University of Texas System |
| 18696793 | POLISHING COMPOSITION | Non-Final OA | FUJIMI INCORPORATED |
| 18688101 | POLISHING COMPOSITION | Non-Final OA | FUJIMI INCORPORATED |
| 18191652 | SILICON ETCHANT AND SILICON ETCHING METHOD | Final Rejection | TOKYO OHKA KOGYO CO., LTD. |
| 18595963 | MICROBLADE STRUCTURE AND METHOD OF TREATING TISSUE | Non-Final OA | Solta Medical Ireland Limited |
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