Prosecution Insights
Last updated: July 17, 2026
Application No. 18/619,016

VERTICALLY STACKED CAPACITORS AND METHOD OF FORMING THE SAME

Non-Final OA §102
Filed
Mar 27, 2024
Examiner
MOJADDEDI, OMAR F
Art Unit
Tech Center
Assignee
Tokyo Electron Limited
OA Round
1 (Non-Final)
89%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
99%
With Interview

Examiner Intelligence

Grants 89% — above average
89%
Career Allowance Rate
469 granted / 525 resolved
+29.3% vs TC avg
Moderate +11% lift
Without
With
+10.8%
Interview Lift
resolved cases with interview
Typical timeline
2y 3m
Avg Prosecution
42 currently pending
Career history
562
Total Applications
across all art units

Statute-Specific Performance

§101
1.1%
-38.9% vs TC avg
§103
85.8%
+45.8% vs TC avg
§102
8.2%
-31.8% vs TC avg
§112
4.4%
-35.6% vs TC avg
Black line = Tech Center average estimate • Based on career data from 525 resolved cases

Office Action

§102
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . DETAILED ACTION Status of Claims 1. Applicant's submittal of claims 1-20 in the “Claims” filed on 03/27/2024 is acknowledged and entered by the Examiner. This office action consider claims 1-20 pending for prosecution. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale or otherwise available to the public before the effective filing date of the claimed invention. Notes: when present, semicolon separated fields within the parenthesis (; ;) represent, for example, as (100; Fig 3A; [0063]) = (element 100; Figure No. 3A; Paragraph No. [0063]). For brevity, the texts “Element”, “Figure No.” and “Paragraph No.” shall be excluded, though; additional clarification notes may be added within each field. The number of fields may be fewer or more than three indicated above. These conventions are used throughout this document. 2. Claims 1-20 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Wada et al. (US 20220406783 A1; hereinafter Wada). Regarding claim 1, Wada teaches a semiconductor device (see the entire document, specifically Fig. 1+; [0086+], and as cited below), comprising: a substrate (Sub; Fig. 9 in view of Fig. 5; see [0111]); a stack of alternating first layers (103; Fig. 9; [0113]) and second layers (120; Fig. 9; [0119]) on a working surface of the substrate; and a capacitor array (130; Fig. 9; see also Figs. 6, 41; see [0119, 0127]) including a plurality of capacitors (130; Fig. 9; see also Figs. 6, 41; see [0119, 0127]), wherein a common electrode (102; Fig. 9; see also Figs. 6, 41; see [0128]) of the capacitor array is disposed through the stack of alternating first layers (103; Fig. 9; [0113]) and second layers (120; Fig. 9; [0119]) on the working surface of the substrate, and each of the plurality of capacitors array (130; Fig. 9; see also Figs. 6, 41; see [0119, 0127]) is sandwiched between two adjacent first layers (103; Fig. 9; [0113]) and comprises a first electrode (131; Fig. 9; [0127-0128]) extending along a direction parallel to the working surface of the substrate and from the common electrode (102; Fig. 9; see also Figs. 6, 41; see [0128]) to one (120; Fig. 9; [0119]) of the second layers (120; Fig. 9; [0119]) between the two adjacent first layers (103; Fig. 9; [0113]), a dielectric layer (133; Fig. 9; [0127-0129]) disposed over the first electrode (131; Fig. 9; [0127-0128]), and a second electrode (134; Fig. 9; [0127-0130]) disposed over the dielectric layer (133; Fig. 9; [0127-0129]). Regarding claim 2, Wada teaches all of the features of claim 1. Wada further teaches wherein the first layers (103; Fig. 9; [0113]) are insulating layers. Regarding claim 3, Wada teaches all of the features of claim 1. Wada further teaches wherein the second layers (120; Fig. 9; [0119]) are conducting layers or sacrificial layers. Regarding claim 4, Wada teaches all of the features of claim 1. Wada further teaches wherein the first electrodes (131; Fig. 9; [0127-0128]) of the plurality of capacitors and the common electrode (102; Fig. 9; [0117]) of the capacitor array are formed of a same conducting material (see [0117, 0128]). Regarding claim 5, Wada teaches all of the features of claim 1. Wada further teaches wherein the dielectric layers (133; Fig. 9; [0127-0129]) of two adjacent capacitors are connected to each other through a dielectric layer (133; Fig. 9; [0127-0129]) surrounding a portion of the common electrode (102; Fig. 9; [0117]). Regarding claim 6, Wada teaches all of the features of claim 5. Wada further teaches wherein the portion of the common electrode (102; Fig. 9; [0117]) is between two adjacent second layers (120; Fig. 9; [0119]). Regarding claim 7, Wada teaches all of the features of claim 5. Wada further teaches wherein the dielectric layer (133; Fig. 9; [0127-0129]) surrounding the portion of the common electrode (102; Fig. 9; [0117]) is between the portion of the common electrode (102; Fig. 9; [0117]) and one of the first layers (103; Fig. 9; [0113]). Regarding claim 8, Wada teaches all of the features of claim 1. Wada further teaches wherein the first electrode (131; Fig. 9; [0127-0128]) of each of the plurality of capacitors has first and second surfaces parallel to the working surface of the substrate and a third surface perpendicular to the working surface of the substrate (see Figs. 9, 6, 41). Regarding claim 9, Wada teaches all of the features of claim 8. Wada further teaches wherein the dielectric layer (133; Fig. 9; [0127-0129]) of each of the plurality of capacitors has three portions, first and second portions of the dielectric layer (133; Fig. 9; [0127-0129]) respectively being disposed over the first and second surfaces of the first electrode (131; Fig. 9; [0127-0129]) of the respective capacitor, and a third portion of the dielectric layer (133; Fig. 9; [0127-0129]) being disposed over the third surface of the first electrode (131; Fig. 9; [0127-0129]) of the respective capacitor. Regarding claim 10, Wada teaches all of the features of claim 9. Wada further teaches wherein the second electrode (134; Fig. 9; [0127-0130]) of each of the plurality of capacitors has three portions, a first portion of the second electrode being disposed between the first portion of the dielectric layer (133; Fig. 9; [0127-0130]) of the respective capacitor and one of the two adjacent first layers (103; Fig. 9; [0127-0130]) immediately above the one of the second layers (120; Fig. 9; [0127-0130]), a second portion of the second electrode (134; Fig. 9; [0127-0130]) being disposed between the second portion of the dielectric layer (133; Fig. 9; [0127-0130]) of the respective capacitor and the other of the two adjacent first layers (103; Fig. 9; [0127-0130]) immediately below the one of the second layers (120; Fig. 9; [0127-0130]), and a third portion of the second electrode (134; Fig. 9; [0127-0130]) being disposed between the third portion of the dielectric layer (133; Fig. 9; [0127-0130]) of the respective capacitor and the one of the second layers (120; Fig. 9; [0127-0130]). Regarding claim 11, Wada teaches a method of manufacturing a semiconductor device (see the entire document, specifically Fig. 1+; [0086+], and as cited below), the method comprising: forming a stack of alternating first layers (103; Fig. 9; [0113]) and second layers (120; Fig. 9; [0119]) on a working surface of a substrate (Sub; Fig. 9 in view of Fig. 5; see [0111]) of the semiconductor device; and forming a capacitor array (130; Fig. 9; see also Figs. 6, 41; see [0119, 0127]) including a plurality of capacitors (130; Fig. 9; see also Figs. 6, 41; see [0119, 0127]), wherein a common electrode (102; Fig. 9; see also Figs. 6, 41; see [0128]) of the capacitor array (130; Fig. 9; see also Figs. 6, 41; see [0119, 0127]) is disposed through the stack of alternating first layers (103; Fig. 9; [0113]) and second layers (120; Fig. 9; [0119]) on the working surface of the substrate, and each of the plurality of capacitors (130; Fig. 9; see also Figs. 6, 41; see [0119, 0127]) is sandwiched between two adjacent first layers (103; Fig. 9; [0113]) and comprises a first electrode (131; Fig. 9; [0127-0128]) extending along a direction parallel to the working surface of the substrate and from the common electrode (102; Fig. 9; see also Figs. 6, 41; see [0128]) to one (120; Fig. 9; [0119]) of the second layers (120; Fig. 9; [0119]) between the two adjacent first layers (103; Fig. 9; [0113]), a dielectric layer (133; Fig. 9; [0127-0129]) disposed over the first electrode (131; Fig. 9; [0127-0128]), and a second electrode (0134; Fig. 9; [0127-0130]) disposed over the dielectric layer (133; Fig. 9; [0127-0129]). Regarding claim 12, Wada teaches all of the features of claim 11. Wada further teaches wherein the first layers (103; Fig. 9; [0113]) are insulating layers. Regarding claim 13, Wada teaches all of the features of claim 11. Wada further teaches wherein the second layers (120; Fig. 9; [0119]) are conducting layers or sacrificial layers. Regarding claim 14, Wada teaches all of the features of claim 11. Wada further teaches wherein the first electrodes (131; Fig. 9; [0127-0128]) of the plurality of capacitors and the common electrode (102; Fig. 9; [0117]) of the capacitor array are formed of a same conducting material (see [0117, 0128]). Regarding claim 15, Wada teaches all of the features of claim 11. Wada further teaches wherein the dielectric layers (133; Fig. 9; [0127-0129]) of two adjacent capacitors are connected to each other through a dielectric layer (133; Fig. 9; [0127-0129]) surrounding a portion of the common electrode (102; Fig. 9; [0117]). Regarding claim 16, Wada teaches all of the features of claim 15. Wada further teaches wherein the portion of the common electrode (102; Fig. 9; [0117]) is between two adjacent second layers (120; Fig. 9; [0119]). Regarding claim 17, Wada teaches all of the features of claim 15. Wada further teaches wherein the dielectric layer (133; Fig. 9; [0127-0129]) surrounding the portion of the common electrode (102; Fig. 9; [0117]) is between the portion of the common electrode (102; Fig. 9; [0117]) and one of the first layers (103; Fig. 9; [0113]). Regarding claim 18, Wada teaches all of the features of claim 11. Wada further teaches wherein the first electrode (131; Fig. 9; [0127-0128]) of each of the plurality of capacitors has first and second surfaces parallel to the working surface of the substrate and a third surface perpendicular to the working surface of the substrate (see Figs. 9, 6, 41). Regarding claim 19, Wada teaches all of the features of claim 18. Wada further teaches wherein the dielectric layer (133; Fig. 9; [0127-0129]) of each of the plurality of capacitors has three portions, first and second portions of the dielectric layer (133; Fig. 9; [0127-0129]) respectively being disposed over the first and second surfaces of the first electrode (131; Fig. 9; [0127-0129]) of the respective capacitor, and a third portion of the dielectric layer (133; Fig. 9; [0127-0129]) being disposed over the third surface of the first electrode (131; Fig. 9; [0127-0129]) of the respective capacitor. Regarding claim 20, Wada teaches all of the features of claim 19. Wada further teaches wherein the second electrode (134; Fig. 9; [0127-0130]) of each of the plurality of capacitors has three portions, a first portion of the second electrode being disposed between the first portion of the dielectric layer (133; Fig. 9; [0127-0130]) of the respective capacitor and one of the two adjacent first layers (103; Fig. 9; [0127-0130]) immediately above the one of the second layers (120; Fig. 9; [0127-0130]), a second portion of the second electrode (134; Fig. 9; [0127-0130]) being disposed between the second portion of the dielectric layer (133; Fig. 9; [0127-0130]) of the respective capacitor and the other of the two adjacent first layers (103; Fig. 9; [0127-0130]) immediately below the one of the second layers (120; Fig. 9; [0127-0130]), and a third portion of the second electrode (134; Fig. 9; [0127-0130]) being disposed between the third portion of the dielectric layer (133; Fig. 9; [0127-0130]) of the respective capacitor and the one of the second layers (120; Fig. 9; [0127-0130]). Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to Omar Mojaddedi whose telephone number is 313-446-6582. The examiner can normally be reached on Monday – Friday, 8:00 a.m. to 4:00 p.m.. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Julio J. Maldonado, can be reached on 571-272-1864. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /OMAR F MOJADDEDI/Examiner, Art Unit 2898
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Prosecution Timeline

Mar 27, 2024
Application Filed
Jun 11, 2026
Non-Final Rejection mailed — §102 (current)

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Prosecution Projections

1-2
Expected OA Rounds
89%
Grant Probability
99%
With Interview (+10.8%)
2y 3m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 525 resolved cases by this examiner. Grant probability derived from career allowance rate.

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