Prosecution Insights
Last updated: October 02, 2026
Application No. 18/624,808

LOW LEAKAGE CAPACITORS, AND RELATED STRUCTURES, METHODS, AND SYSTEMS

Non-Final OA §102
Filed
Apr 02, 2024
Priority
Apr 04, 2023 — provisional 63/494,156
Examiner
KEBEDE, BROOK
Art Unit
Tech Center
Assignee
ASM IP Holding B.V.
OA Round
1 (Non-Final)
89%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
93%
With Interview

Examiner Intelligence

Grants 89% — above average
89%
Career Allowance Rate
919 granted / 1035 resolved
+28.8% vs TC avg
Minimal +5% lift
Without
With
+4.6%
Interview Lift
resolved cases with interview
Fast prosecutor
2y 1m
Avg Prosecution
22 currently pending
Career history
1041
Total Applications
across all art units

Statute-Specific Performance

§101
2.2%
-37.8% vs TC avg
§103
35.8%
-4.2% vs TC avg
§102
30.3%
-9.7% vs TC avg
§112
12.1%
-27.9% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1035 resolved cases

Office Action

§102
DETAILED ACTION The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election without traverse of Group I, i.e., claims 1-11, in the reply filed on July 8, 2026 is acknowledged. Claims 12-19 are withdrawn from further consideration pursuant to 37 CFR 1.142(b) as being drawn to a nonelected invention, there being no allowable generic or linking claim. Election was made without traverse in the reply filed on July 8, 2026. Accordingly, claims 12-19 have been canceled in the amendment filed on July 8, 2026, Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by SPANIER et al. (2022/0013288). PNG media_image1.png 706 670 media_image1.png Greyscale Re Claim 1, SPANIER et al. disclose a structure comprising a proximal contact (i.e., top TiN electrode), a proximal barrier (i.e., Al2O3) a high-k dielectric (i.e., high K BTO dielectric), and a distal contact (i.e., Pt electrode); the proximal contact (i.e., top TiN electrode) being adjacent to the proximal barrier (i.e., Al2O3); and the proximal barrier (i.e., Al2O3) being positioned between the proximal contact (i.e., top TiN electrode) and the high-k dielectric (i.e., high K BTO dielectric), and the high-k dielectric (i.e., high K BTO dielectric ) being positioned between the proximal barrier (i.e., Al2O3) and the distal contact (i.e., Pt electrode), wherein the proximal barrier (i.e., Al2O3) is constructed and arranged to inhibit Poole-Frenkel emission from the high-k dielectric when a first electric field is applied between the proximal contact and a distal contact in a first electric field direction (see Figs. 3 and 24, related text in Paragraphs [0006], [0024], [0030], [0032], [0045]). Allowable Subject Matter Claims 2-11 objected to as being dependent upon a rejected base claim but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure Hwang et al. (US 2017/0005262) discloses variable resistor of non-volatile memory device that includes top and bottom electrodes, high dielectric layer (i.e., HfO film) formed between oxygen deficient titanium oxide layer and tantalum oxide (TaO) layer stacked between the top and bottom electrodes. Correspondence Any inquiry concerning this communication or earlier communications from the examiner should be directed to BROOK KEBEDE whose telephone number is 571-272-1862. The examiner can normally be reached Monday Friday 8:00 AM 5:00 PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Jeff Natalini can be reached at 571-272-2266. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /BROOK KEBEDE/ Primary Examiner, Art Unit 2894 /BK/ September 4, 2026
Read full office action

Prosecution Timeline

Apr 02, 2024
Application Filed
Sep 10, 2026
Non-Final Rejection mailed — §102 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

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3y 4m to grant Granted Sep 22, 2026
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3y 7m to grant Granted Sep 15, 2026
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3y 9m to grant Granted Sep 08, 2026
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2y 11m to grant Granted Sep 08, 2026
Patent 12733158
SEMICONDUCTOR MEMORY DEVICE
3y 2m to grant Granted Sep 08, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
89%
Grant Probability
93%
With Interview (+4.6%)
2y 1m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1035 resolved cases by this examiner. Grant probability derived from career allowance rate.

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