Prosecution Insights
Last updated: May 29, 2026

Examiner: KEBEDE, BROOK

Tech Center 2800 • Art Units: 2818 2823 2894

This examiner grants 89% of resolved cases

Performance Statistics

88.8%
Allow Rate
+20.8% vs TC avg
1,031
Total Applications
+4.3%
Interview Lift
774
Avg Prosecution Days
Based on 1012 resolved cases, 2023–2026

Rejection Statute Breakdown

0.8%
§101 Eligibility
21.3%
§102 Novelty
48.0%
§103 Obviousness
8.2%
§112 Clarity

Currently Pending Office Actions

App #TitleStatusAssignee
19351203 METHODS OF FABRICATING 3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH METAL LAYERS AND MEMORY CELLS Non-Final OA Monolithic 3D Inc.
19351167 3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH TRANSISTORS, METAL LAYERS, AND SINGLE CRYSTAL TRANSISTOR CHANNELS Non-Final OA Monolithic 3D Inc.
18554921 SEMICONDUCTOR DEVICE Non-Final OA Mitsubishi Electric Corporation
18284068 POWER SEMICONDUCTOR DEVICE Final Rejection Mitsubishi Electric Corporation
18325291 METHOD OF MANUFACTURING QUANTUM DOT-CONTAINING COMPLEX, QUANTUM DOT-CONTAINING COMPLEX MANUFACTURED THEREBY, LIGHT-EMITTING DEVICE INCLUDING QUANTUM DOT-CONTAINING COMPLEX AND ELECTRONIC APPARATUS INCLUDING QUANTUM DOT-CONTAINING COMPLEX Non-Final OA Samsung Display Co., Ltd.
18148687 METAL-ON-METAL DEPOSITION METHODS FOR FILLING A GAP FEATURE ON A SUBSTRATE SURFACE Non-Final OA ASM IP Holding B.V.
18147038 SYSTEMS AND METHODS FOR CLEANING AND TREATING A SURFACE OF A SUBSTRATE Non-Final OA ASM IP Holding B.V.
18554660 DISPLAY DEVICE AND ELECTRONIC DEVICE Non-Final OA SONY SEMICONDUCTOR SOLUTIONS CORPORATION
18037638 OXIDE SEMICONDUCTOR HAVING OHMIC JUNCTION STRUCTURE, THIN-FILM TRANSISTOR HAVING SAME, AND MANUFACTURING METHODS THEREFOR Non-Final OA IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
18283897 POWER SEMICONDUCTOR MODULE COMPRISING SWITCH ELEMENTS AND DIODES Non-Final OA Hitachi Energy Ltd
18041391 COMBINED SELF-FORMING BARRIER AND SEED LAYER BY ATOMIC LAYER DEPOSITION Non-Final OA Lam Research Corporation
18283972 METHOD FOR MOUNTING AN ELECTRONIC COMPONENT ONTO A SUBSTRATE BY MEANS OF SINTERING Non-Final OA SAFRAN ELECTRONICS & DEFENSE
18384396 PASSIVATION LAYER FOR FORMING SEMICONDUCTOR BONDING STRUCTURE, SPUTTERING TARGET MAKING THE SAME, SEMICONDUCTOR BONDING STRUCTURE AND SEMICONDUCTOR BONDING PROCESS Non-Final OA SOLAR APPLIED MATERIALS TECHNOLOGY CORP.
18554788 A diode radiation sensor Non-Final OA Fondazione Bruno Kessler

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