Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Detailed Action
Restriction/Election
Applicant’s election of Invention I (Claims 1-16) in the reply filed on 8/27/2026 is acknowledged. Because applicant did not distinctly and specifically point out the supposed errors in the restriction requirement, the election has been treated as an election without traverse (MPEP § 818.03(a)).
Specification Objection
The title of the invention is not descriptive. A new title is required that is clearly indicative of the invention to which the claims are directed.
Claim Rejections – 35 U.S.C. 102
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale or otherwise available to the public before the effective filing date of the claimed invention.
(a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention.
In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AlA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
Claims 1, 2 and 4-9 rejected under 35 U.S.C. 102(a)(1) as being anticipated by Jee (U.S. Patent Pub. No. 2016/0056101).
Regarding Claim 1
FIG. 27 of Jee discloses a semiconductor package structure, comprising: a first die (200) having a first bonding surface; a second die (100) having a second bonding surface, wherein the second bonding surface faces the first bonding surface; and an intermediate structure (240) between the first bonding surface and the second bonding surface, wherein the intermediate structure comprises a plurality of traces (242) over the first bonding surface, a plurality of microbumps (170) over the second bonding surface, and a plurality of joint parts (244) between the traces and the microbumps, wherein the plurality of joint parts comprises an intermetallic compound.
Regarding Claim 2
FIG. 27 of Jee discloses the intermetallic compound in the plurality of joint parts is a copper-rich compound [0081].
Regarding Claim 4
FIG. 27 of Jee each of the plurality of joint parts contains 50 vol. % or more of the intermetallic compound based on a total volume of each of the plurality of joint parts.
Regarding Claim 5
FIG. 27 of Jee each of the plurality of joint parts contains substantially 100 vol. % of the intermetallic compound based on a total volume of each of the plurality of joint parts.
Regarding Claim 6
FIG. 18 of Jee discloses in a plan view, each of the plurality of microbumps has an oblong shape, a rectangle shape, or a round shape [0165].
Regarding Claim 7
FIG. 27 of Jee discloses one of the traces bonds to one of the microbumps via one of the joint parts [0081].
Regarding Claim 8
FIG. 27 of Jee discloses a width of each of the plurality of microbumps is larger than a width of at least one of the traces.
Regarding Claim 9
FIG. 27 of Jee discloses a thickness of at least one of the joint parts is thicker than a thickness of each of the plurality of traces.
Claim 1 rejected under 35 U.S.C. 102(a)(1) as being anticipated by Shih (U.S. Patent Pub. No. 2021/0305223).
Regarding Claim 1
FIG. 1 of Jee discloses a semiconductor package structure, comprising: a first die (13) having a first bonding surface; a second die (100) having a second bonding surface, wherein the second bonding surface faces the first bonding surface; and an intermediate structure between the first bonding surface and the second bonding surface, wherein the intermediate structure comprises a plurality of traces over the first bonding surface, a plurality of microbumps over the second bonding surface, and a plurality of joint parts (22) between the traces and the microbumps, wherein the plurality of joint parts comprises an intermetallic compound.
Claim 1 rejected under 35 U.S.C. 102(a)(1) as being anticipated by Choi (U.S. Patent Pub. No. 2017/0141071).
Regarding Claim 1
FIG. 1 of Choi discloses a semiconductor package structure, comprising: a first die (210) having a first bonding surface; a second die (110) having a second bonding surface, wherein the second bonding surface faces the first bonding surface; and an intermediate structure between the first bonding surface and the second bonding surface, wherein the intermediate structure comprises a plurality of traces over the first bonding surface, a plurality of microbumps (116) over the second bonding surface, and a plurality of joint parts (213) between the traces and the microbumps, wherein the plurality of joint parts comprises an intermetallic compound.
Claims 10-12 rejected under 35 U.S.C. 102(a)(1) as being anticipated by Lv (CN 217007767, machine-translation provided).
Regarding Claim 10
FIG. 29 of Lv discloses a semiconductor package structure, comprising: a first die (110) having a first bonding surface with a plurality of first traces (24, FIG. 23); a protective layer (280), formed over the first traces, wherein the protective layer has at least one opening exposing a first portion (100) of the first traces; at least one under-ball metallurgy (UBM) pad (210), formed on the protective layer and penetrating through the protective layer to electrically connect with a second portion (beyond 100) of the first traces; a second die (90) having a second bonding surface facing the first bonding surface, wherein the second bonding surface has a plurality of second traces (94); a plurality of microbumps (92), formed on a first portion of the second traces; and a plurality of joint parts (212), disposed between the first portion of the first traces and the plurality of microbumps, wherein the plurality of joint parts comprises an intermetallic compound.
Regarding Claim 11
FIG. 29 of Lv discloses the microbumps are further disposed between the at least one UBM pad and a second portion of the second traces, and the joint parts are further disposed between the microbumps and the at least one UBM pad.
Regarding Claim 12
FIG. 24 of Lv discloses a thickness of the microbumps below the first portion of the first traces is thicker than a thickness of the microbumps below the second portion of the first traces.
Claim Rejections – 35 U.S.C. 103
The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action:
A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made.
This application currently names joint inventors. In considering patentability of the claims the examiner presumes that the subject matter of the various claims was commonly owned as of the effective filing date of the claimed invention(s) absent any evidence to the contrary. Applicant is advised of the obligation under 37 CFR 1.56 to point out the inventor and effective filing dates of each claim that was not commonly owned as of the effective filing date of the later invention in order for the examiner to consider the applicability of 35 U.S.C. 102(b)(2)(C) for any potential 35 U.S.C. 102(a)(2) prior art against the later invention.
Claim 3 rejected under 35 U.S.C. 103 as being unpatentable over Jee, in view of Kang (U.S. Patent Pub. No. 2015/0102485).
Regarding Claim 3
Jee discloses Claim 1.
Jee is silent with respect to “the intermetallic compound in the plurality of joint parts comprises Cu.sub.6Sn.sub.5 or Cu.sub.3Sn”.
FIG. 7 of Kang discloses a similar intermetallic compound, wherein the intermetallic compound (440) in the plurality of joint parts comprises Cu.sub.6Sn.sub.5 or Cu.sub.3Sn [0158].
It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Jee, as taught by Kang. The ordinary artisan would have been motivated to modify Jee in the above manner for purpose of excellent electric connection and high reliability ([0158] of Kang).
Claims 10, 11 and 14-16 rejected under 35 U.S.C. 103 as being unpatentable over Chung (U.S. Patent Pub. No. 2023/0023883), in view of Kwon (KR 20160004065, machine-translation provided).
Regarding Claim 10
FIG. 7 of Chung discloses a semiconductor package structure, comprising: a first die (500) having a first bonding surface with a plurality of first traces (556); a protective layer (410), formed over the first traces, wherein the protective layer has at least one opening exposing a first portion (between 200a and 200b) of the first traces; at least one under-ball metallurgy (UBM) pad (330), formed on the protective layer and penetrating through the protective layer to electrically connect with a second portion (beyond 100) of the first traces; a second die (200) having a second bonding surface facing the first bonding surface, wherein the second bonding surface has a plurality of second traces (254); and a plurality of joint parts (340), wherein the plurality of joint parts comprises an intermetallic compound.
Chung is silent with respect to “a plurality of microbumps, formed on a first portion of the second traces” and “a plurality of joint parts, disposed between the first portion of the first traces and the plurality of microbumps”.
FIG. 9 of Kwon discloses a similar intermetallic compound, comprising a plurality of microbumps (113), formed on a first portion of the second traces (111); and a plurality of joint parts (320), disposed between the first portion of the first traces (211) and the plurality of microbumps.
It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Chung, as taught by Kwon. The ordinary artisan would have been motivated to modify Chung in the above manner for purpose of maintaining the minimum spacing distance between the semiconductor chip and the package board during thermocompression of an underfill process (Abstract of Kwon).
Regarding Claim 11
FIG. 9 of Kwon discloses the microbumps (113) are further disposed between the at least one UBM pad (330) and a second portion (111b) of the second traces, and the joint parts (320) are further disposed between the microbumps and the at least one UBM pad.
Regarding Claim 14
FIG. 7 of Chung discloses each of the plurality of joint parts contains 50 vol. % or more of the intermetallic compound based on a total volume of each of the plurality of joint parts.
Regarding Claim 15
FIG. 7 of Chung discloses each of the plurality of joint parts contains substantially 100 vol. % of the intermetallic compound based on a total volume of each of the plurality of joint parts.
Regarding Claim 16
FIG. 3 of Chung discloses in a plan view, each of the plurality of microbumps has an oblong shape, a rectangle shape, or a round shape.
Claim 12 rejected under 35 U.S.C. 103 as being unpatentable over Chung and Kwon, in view of Kim (U.S. Patent Pub. No. 2024/0194643).
Regarding Claim 12
Chung as modified by Kwon discloses Claim 10.
Chung as modified by Kwon is silent with respect to “a thickness of the microbumps below the first portion of the first traces is thicker than a thickness of the microbumps below the second portion of the first traces”.
FIG. 3 of Kim discloses a similar intermetallic compound, wherein a thickness of the microbumps (T2) below the first portion of the first traces is thicker than a thickness of the microbumps (T1) below the second portion of the first traces [0050].
It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Chung, as taught by Kim. The ordinary artisan would have been motivated to modify Chung in the above manner for purpose of improving heat dissipation ([0051] of Kim).
Claim 13 rejected under 35 U.S.C. 103 as being unpatentable over Chung and Kwon, in view of Kang (U.S. Patent Pub. No. 2015/0102485).
Regarding Claim 13
Chung as modified by Kwon discloses Claim 10.
Chung as modified by Kwon is silent with respect to “the intermetallic compound in the plurality of joint parts comprises Cu.sub.6Sn.sub.5 or Cu.sub.3Sn”.
FIG. 7 of Kang discloses a similar intermetallic compound, wherein the intermetallic compound (440) in the plurality of joint parts comprises Cu.sub.6Sn.sub.5 or Cu.sub.3Sn [0158].
It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Chung, as taught by Kang. The ordinary artisan would have been motivated to modify Chung in the above manner for purpose of excellent electric connection and high reliability ([0158] of Kang).
Pertinent Art
Chen (U.S. Patent Pub. No. 2020/0058632), Huang (U.S. Patent Pub. No. 2020/0203300), 20190131284, 20230207506, 20150270232, 20250125273.
Conclusion
Any inquiry concerning this communication or earlier communications from the examiner should be directed to SHENG-BAI ZHU whose telephone number is (571)270-3904. The examiner can normally be reached on 11am – 7pm EST.
If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Chad Dicke can be reached on (571)270-7996. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
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/SHENG-BAI ZHU/Primary Examiner, Art Unit 2897
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