DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Claim Rejections - 35 USC § 102
In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.
Claim(s) 1-6 is/are rejected under 35 U.S.C. 102(a1) as being anticipated by Yang US 2023/0157036.
Regarding claim 1, Yang shows in FIG. 2, a bit line contact structure, comprising: a bit line contact (DC)[0027] having a rectangular cross-sectional profile in a top-view perspective and comprising two first sides parallel to each other and two second sides parallel to each other and perpendicular to the two first sides [0027]; and two contact-isolating spacers (141)[0028] respectively and correspondingly covering the two first sides of the bit line contact (DC).
Regarding claim 2, Yang shows in FIG. 2, a bit line contact structure, wherein a width of the two contact-isolating spacers (141) and a width of the bit line contact are substantially the same [0028].
Regarding claim 3, Yang shows in FIG. 2, a bit line contact structure (DC), wherein the bit line contact comprises tungsten, cobalt, zirconium, tantalum, titanium, aluminum, ruthenium, copper, metal carbides, metal nitrides, transition metal aluminides, or a combination thereof [0026].
Regarding claim 4, Yang shows in FIG. 2, a bit line contact structure, wherein the contact-isolating spacers (141) [0028] comprise silicon nitride.
Regarding claim 5, Yang shows in FIG. 2, a bit line contact structure, further comprising two buried insulating layers (SPS)[0032] respectively and correspondingly covering the two contact-isolating spacers (141).
Regarding claim 6, Yang shows in FIG. 2, a bit line contact structure, wherein a height of the two contact-isolating spacers (141) is less than a height of the two buried insulating layers (SPS)(23,21)[0032].
Conclusion
Any inquiry concerning this communication or earlier communications from the examiner should be directed to MARC-ANTHONY ARMAND whose telephone number is (571)272-5178. The examiner can normally be reached 8am-5pm.
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MARC - ANTHONY ARMAND
Primary Examiner
Art Unit 2813
/MARC-ANTHONY ARMAND/Primary Examiner, Art Unit 2813
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