Prosecution Insights
Prosecution Insights
Tech Center 3600 • Art Units: 2813 2814 3646
This examiner grants 83% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18532576 | INTEGRATED CIRCUIT DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18379731 | SEMICONDUCTOR DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18498811 | INTEGRATED DEEP TRENCH CAPACITOR HAVING HIGH CAPACITANCE DENSITY AND VOLTAGE LINEARITY | Final Rejection | Texas Instruments Incorporated |
| 18362276 | WIREBOND ELECTROPLATING STRUCTURE FOR FULL CUT WETTABLE FLANK STRUCTURES FOR SON PACKAGES | Non-Final OA | Texas Instruments Incorporated |
| 18504271 | SEMICONDUCTOR DEVICE | Non-Final OA | DENSO CORPORATION |
| 18542814 | SEMICONDUCTOR DEVICE | Non-Final OA | FUJI ELECTRIC CO., LTD. |
| 17930841 | FULL WAFER DEVICE WITH BACK SIDE INTERCONNECTS AND WAFER-SCALE INTEGRATION | Non-Final OA | Intel Corporation |
| 17899670 | FULL WAFER DEVICE WITH MULTIPLE DIRECTIONAL INDICATORS | Non-Final OA | Intel Corporation |
| 18556861 | OPTO-ELECTRONIC DEVICE INCLUDING EM RADIATION TRANSMISSIVE REGIONS BETWEEN EMISSIVE REGIONS | Non-Final OA | OTI Lumionics Inc. |
| 18372795 | METHOD OF FORMING INDIUM GALLIUM NITRIDE QUANTUM WELL STRUCTURE | Non-Final OA | NATIONAL SUN YAT-SEN UNIVERSITY |
| 18483624 | SILICON CARBIDE OPTO-THYRISTOR AND METHOD FOR MANUFACTURING THE SAME | Non-Final OA | Taiwan-Asia Semiconductor Corporation |
| 18572965 | INSULATED GATE BIPOLAR TRANSISTOR WITH SUPER JUNCTION STRUCTURE, AND PREPARATION METHOD THEREFOR | Non-Final OA | CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD. |
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