Prosecution Insights
Last updated: October 21, 2026
Application No. 18/754,316

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Non-Final OA §102
Filed
Jun 26, 2024
Priority
Mar 15, 2024 — CN 202410302737.2
Examiner
LIU, BENJAMIN T
Art Unit
2893
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Chinese Academy of Sciences
OA Round
1 (Non-Final)
75%
Grant Probability
Favorable
1-2
OA Rounds
7m
Est. Remaining
88%
With Interview

Examiner Intelligence

Grants 75% — above average
75%
Career Allowance Rate
543 granted / 723 resolved
+7.1% vs TC avg
Moderate +12% lift
Without
With
+12.4%
Interview Lift
resolved cases with interview
Typical timeline
2y 11m
Avg Prosecution
35 currently pending
Career history
763
Total Applications
across all art units

Statute-Specific Performance

§101
0.4%
-39.6% vs TC avg
§103
59.2%
+19.2% vs TC avg
§102
31.0%
-9.0% vs TC avg
§112
9.2%
-30.8% vs TC avg
Black line = Tech Center average estimate • Based on career data from 723 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Claims 8-10 are withdrawn from further consideration pursuant to 37 CFR 1.142(b) as being drawn to a nonelected process, there being no allowable generic or linking claim. Election was made without traverse in the reply filed on 9/14/2026. Applicant’s election without traverse of claims 1-7 in the reply filed on 9/14/2026 is acknowledged. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1-7 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Zhu (CN 11532348). With regards to claim 1, fig. 8 of Zhu discloses a semiconductor device, comprising: a first source/drain layer (“lower source/drain S/DL”, par [0083]), a channel layer (“channel region”, par [0083]) and a second source/drain layer (“upper source/drain S/DU”, par [0083]) sequentially provided in a vertical direction on a substrate 1001, wherein the channel layer (“channel region”, par [0085]) is connected between the first source/drain layer (“lower source/drain S/DL”, par [0083]) and the second source/drain layer (“upper source/drain S/DU”, par [0083]), and the channel layer (“channel region”, par [0085]) has a doping profile (“doping characteristics”, par [0085]) along the vertical direction (bottom to top), in which a middle portion BD of the channel layer (“channel region”, par [0085]) has a high doping concentration (“doping concentration in the body contact region BD can be higher”, par [0085]) and end portions of the channel layer (“region between the body contact region BD and the lower source/drain region S/DL”, par [0085]) have a low doping concentration (“diffusion from the first channel defining layer 1005”, par [0085]); and a body contact 1007 connected to the middle portion (“channel region”, par [0085]) of the channel layer (“channel region”, par [0085]), wherein the middle portion (“channel region”, par [0085]) of the channel layer (“channel region”, par [0085]) has a height in the vertical direction greater (top of channel region taller than 1007) than a height of the body contact 1007 in the vertical direction. With regards to claim 2, fig. 8 of Zhu discloses that the middle portion BD of the channel layer (“channel region”, par [0085]) has a substantially uniform doping profile BD. With regards to claim 3, fig. 8 of Zhu discloses that the middle portion BD of the channel layer 1021’ is substantially symmetrical (“body contact region BD can be located substantially in the middle of the channel region in the vertical direction”, par [0084]) with respect to the body contact 1007; or wherein the middle portion of the channel layer is asymmetrical with respect to the body contact. With regards to claim 4, fig. 8 of Zhu discloses an extension height of the middle portion BD of the channel layer (“channel region”, par [0085]) relative to a top surface of the body contact 1007 in the vertical direction is substantially equal to an extension height of the middle portion BD of the channel layer (“channel region”, par [0085]) relative to a bottom surface of the body contact 1007 in the vertical direction; or wherein an extension height of the middle portion of the channel layer relative to a top surface of the body contact in the vertical direction is greater than an extension height of the middle portion of the channel layer relative to a bottom surface of the body contact in the vertical direction; or wherein an extension height of the middle portion of the channel layer relative to a top surface of the body contact in the vertical direction is less than an extension height of the middle portion of the channel layer relative to a bottom surface of the body contact in the vertical direction. With regards to claim 5, fig. 8 of Zhu discloses a doping type in the channel layer (“channel region”, par [0085]) is opposite to a doping type (“conductivity type”, claim 4) in the first source/drain layer (lower source/drain region”, claim 4) and in the second source/drain layer (“upper source/drain region”, claim 4). With regards to claim 6, fig. 8 of Zhu discloses that the channel layer (“channel region”, par [0085]) extends vertically (bottom to top). With regards to claim 7, fig. 8 of Zhu discloses that the body contact 1007 extends laterally (left to right). Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to BENJAMIN T LIU whose telephone number is (571)272-6009. The examiner can normally be reached Monday-Friday 11:00am-7:30pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Yara J Green can be reached at 571 270-3035. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /BENJAMIN TZU-HUNG LIU/Primary Examiner, Art Unit 2893
Read full office action

Prosecution Timeline

Jun 26, 2024
Application Filed
Sep 29, 2026
Non-Final Rejection mailed — §102 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
75%
Grant Probability
88%
With Interview (+12.4%)
2y 11m (~7m remaining)
Median Time to Grant
Low
PTA Risk
Based on 723 resolved cases by this examiner. Grant probability derived from career allowance rate.

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