Technology area: Semiconductors, Circuits & Optics
21 pending office actions • 10 art units • 21 examiners • 0 of 21 (0%) have an AI response strategy ready • 74 patents granted in the last 365 days
Chinese Academy of Sciences maintains a significant prosecution pipeline with 21 pending office actions in the Semiconductors, Circuits & Optics technology area. These actions are distributed among 21 distinct examiners, meaning every pending matter is currently being reviewed by a different individual. This high level of examiner diversity is accompanied by a broad administrative reach across 10 distinct art units.
NGUYEN, DAO H is the busiest examiner, though they only hold 1 pending office action. This highlights the extreme distribution of the 21 pending office actions, as no single examiner handles more than one case. With 10 distinct art units involved, the portfolio spans a wide array of semiconductor and optical sub-specialties.
Practitioners must manage a complex array of examiner personalities and art unit specificities across this large volume of pending actions. The diversity of 21 distinct examiners suggests that the academy is pursuing a wide range of technical improvements that do not overlap significantly in the eyes of the patent office. Strategy must be tailored to the specific requirements of the distinct art units to ensure broad protection. This approach allows for a more granular defense of the company's intellectual property.
Based on the USPTO statutory response window for each pending office action. 3 of the docket's apps have a known mailing date; the rest are excluded from the tile counts.
Every pending office action with a known statutory deadline, placed on a days-until-due axis. Dots left of Today are overdue; the further right, the more runway. Cases that share a deadline window stack vertically. 3 of the docket's apps have a known mailing date.
Difficulty is derived from the rejection statutes on the most recent pending office action. §101-driven and multi-statute cases are graded Hard; §112-only and obviousness-type double-patenting cases are graded Easy; everything else is Medium. "Unknown" means we have not yet parsed a statute for that office action.
| Bucket | Cases |
|---|---|
| §101 only | 2 (10%) |
| §101 + other | 1 (5%) |
| §103 only | 7 (33%) |
| §102 only | 3 (14%) |
| §112 only | 1 (5%) |
| Multi-statute (no §101) | 7 (33%) |
How the docket's pending cases split across USPTO tech-center bands.
Manual office-action response work runs about 10 hours per case. The time-saved bands below show what IP Author's prosecution pipeline typically delivers — a conservative 20% on the low end, 35% in the middle, 50% on the high end.
| Examiner | Apps on this docket | Allow rate | Interview lift |
|---|---|---|---|
| NGUYEN, DAO H | 1 | 91.4% | +5.7% |
| ERDEM, FAZLI | 1 | 85.4% | +15.9% |
| TRAN, TONY | 1 | 70.5% | +33.5% |
| DAS, PINAKI | 1 | 86.8% | -1.8% |
| ENAD, CHRISTINE A | 1 | 84.4% | +10.3% |
| VANYO, MICHAEL MOHABIR | 1 | — | — |
| WHITESELL, STEVEN H | 1 | 81.9% | +12.9% |
| KARIMY, TIMOR | 1 | 82.2% | +9.6% |
| OWENS, DOUGLAS W | 1 | 80.8% | +3.1% |
| YEMELYANOV, DMITRIY | 1 | 74.3% | +19.2% |
Cases in front of an examiner with an allow rate of 80%+ where the difficulty is Easy or Medium. The top 4 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18725965 | METHOD FOR MANUFACTURING GATE-ALL-AROUND NANOSHEET STRUCTURE | ERDEM, FAZLI | — |
| 18650805 | SEMICONDUCTOR DEVICE WITH DECREASED SOURCE AND DRAIN RESISTANCE AND MANUFACTURING METHOD | ENAD, CHRISTINE A | — |
| 18293846 | SOT-MRAM MEMORY CELL, MEMORY ARRAY, MEMORY, AND OPERATION METHOD | KARIMY, TIMOR | — |
| 18565701 | SEMICONDUCTOR DEVICE HAVING DOUBLE-GATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS | OWENS, DOUGLAS W | — |
Multi-statute / §101-driven matters, or cases in front of an examiner with an allow rate under 30%. The top 8 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18388233 | NOR-TYPE MEMORY DEVICE, METHOD OF MANUFACTURING NOR-TYPE MEMORY DEVICE, AND ELECTRONIC DEVICE INCLUDING MEMORY DEVICE | YEMELYANOV, DMITRIY | 33d |
| 18834258 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | NGUYEN, DAO H | — |
| 18708028 | METHOD FOR MANUFACTURING GATE-ALL-AROUND TFET DEVICE | DAS, PINAKI | — |
| 18624334 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | VANYO, MICHAEL MOHABIR | — |
| 18681014 | ANALYTIC METHOD AND DEVICE FOR QUANTITATIVELY CALCULATING LINE EDGE ROUGHNESS IN PLASMA ULTRA-DIFFRACTION PHOTOETCHING PROCESS | WHITESELL, STEVEN H | — |
| 18250461 | METHOD OF DESIGNING THIN FILM TRANSISTOR | COTHRAN, BERNARD E | — |
| 18115227 | NOR-TYPE MEMORY DEVICE, METHOD OF MANUFACTURING NOR-TYPE MEMORY DEVICE, AND ELECTRONIC APPARATUS INCLUDING MEMORY DEVICE | MCDONALD, JASON ANDREW | — |
| 17759226 | SEMICONDUCTOR DEVICE WITH C-SHAPED CHANNEL PORTION, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS INCLUDING THE SAME | WEGNER, AARON MICHAEL | — |
Cases in front of an examiner whose interview lift is 10 percentage points or more — i.e. interviewed cases historically resolve more favorably than non-interviewed ones. The top 5 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18388233 | NOR-TYPE MEMORY DEVICE, METHOD OF MANUFACTURING NOR-TYPE MEMORY DEVICE, AND ELECTRONIC DEVICE INCLUDING MEMORY DEVICE | YEMELYANOV, DMITRIY | 33d |
| 18725965 | METHOD FOR MANUFACTURING GATE-ALL-AROUND NANOSHEET STRUCTURE | ERDEM, FAZLI | — |
| 18670024 | SRAM CELL, MEMORY INCLUDING SRAM CELL, AND ELECTRONIC DEVICE | TRAN, TONY | — |
| 18650805 | SEMICONDUCTOR DEVICE WITH DECREASED SOURCE AND DRAIN RESISTANCE AND MANUFACTURING METHOD | ENAD, CHRISTINE A | — |
| 18681014 | ANALYTIC METHOD AND DEVICE FOR QUANTITATIVELY CALCULATING LINE EDGE ROUGHNESS IN PLASMA ULTRA-DIFFRACTION PHOTOETCHING PROCESS | WHITESELL, STEVEN H | — |
| Art Unit | Apps |
|---|---|
| 2818 | 3 |
| 2897 | 2 |
| 1759 | 1 |
| 2891 | 1 |
| 2898 | 1 |
| 2896 | 1 |
| 2813 | 1 |
| 2800 | 1 |
| 2881 | 1 |
| 2186 | 1 |
| App # | Title | Examiner | Art Unit | Statutes | Status | Due in | AI | Filed |
|---|---|---|---|---|---|---|---|---|
| 18834258 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | NGUYEN, DAO H | 2818 | §102§103 | Non-Final OA | — | Pending | Jul 30, 2024 |
| 18725965 | METHOD FOR MANUFACTURING GATE-ALL-AROUND NANOSHEET STRUCTURE | ERDEM, FAZLI | — | §103 | Non-Final OA | — | Pending | Jul 01, 2024 |
| 18670024 | SRAM CELL, MEMORY INCLUDING SRAM CELL, AND ELECTRONIC DEVICE | TRAN, TONY | — | §102 | Non-Final OA | — | Pending | May 21, 2024 |
| 18708028 | METHOD FOR MANUFACTURING GATE-ALL-AROUND TFET DEVICE | DAS, PINAKI | — | §103§112 | Non-Final OA | — | Pending | May 07, 2024 |
| 18650805 | SEMICONDUCTOR DEVICE WITH DECREASED SOURCE AND DRAIN RESISTANCE AND MANUFACTURING METHOD | ENAD, CHRISTINE A | — | §103 | Non-Final OA | — | Pending | Apr 30, 2024 |
| 18624334 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | VANYO, MICHAEL MOHABIR | — | §102§103 | Non-Final OA | — | Pending | Apr 02, 2024 |
| 18681014 | ANALYTIC METHOD AND DEVICE FOR QUANTITATIVELY CALCULATING LINE EDGE ROUGHNESS IN PLASMA ULTRA-DIFFRACTION PHOTOETCHING PROCESS | WHITESELL, STEVEN H | 1759 | §102§112 | Final Rejection | — | Pending | Feb 02, 2024 |
| 18293846 | SOT-MRAM MEMORY CELL, MEMORY ARRAY, MEMORY, AND OPERATION METHOD | KARIMY, TIMOR | 2818 | §103 | Non-Final OA | — | Pending | Jan 31, 2024 |
| 18565701 | SEMICONDUCTOR DEVICE HAVING DOUBLE-GATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS | OWENS, DOUGLAS W | 2897 | §102 | Final Rejection | — | Pending | Nov 30, 2023 |
| 18388233 | NOR-TYPE MEMORY DEVICE, METHOD OF MANUFACTURING NOR-TYPE MEMORY DEVICE, AND ELECTRONIC DEVICE INCLUDING MEMORY DEVICE | YEMELYANOV, DMITRIY | 2891 | §102§112 | Non-Final OA | 33d | Pending | Nov 09, 2023 |
| 18250461 | METHOD OF DESIGNING THIN FILM TRANSISTOR | COTHRAN, BERNARD E | — | §101§103 | Non-Final OA | — | Pending | Apr 25, 2023 |
| 18025030 | DEVICE HAVING FERROELECTRIC OR NEGATIVE CAPACITANCE MATERIAL AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS | DEGRASSE, IAN ISAAC | 2818 | §112 | Non-Final OA | 20d | Pending | Mar 07, 2023 |
| 18115227 | NOR-TYPE MEMORY DEVICE, METHOD OF MANUFACTURING NOR-TYPE MEMORY DEVICE, AND ELECTRONIC APPARATUS INCLUDING MEMORY DEVICE | MCDONALD, JASON ANDREW | 2898 | §102§103 | Non-Final OA | — | Pending | Feb 28, 2023 |
| 18043324 | NOR-TYPE MEMORY DEVICE, METHOD OF MANUFACTURING NOR-TYPE MEMORY DEVICE, AND ELECTRONIC APPARATUS INCLUDING MEMORY DEVICE | PATERSON, BRIGITTE A | 2896 | §102 | Non-Final OA | — | Pending | Feb 27, 2023 |
| 18005756 | SPIN ORBIT TORQUE MAGNETIC RANDOM ACCESS MEMORY CELL, SPIN ORBIT TORQUE MAGNETIC RANDOM ACCESS MEMORY ARRAY, AND METHOD FOR CALCULATING HAMMING DISTANCE | REECE, CHRISTOPHER LANE | — | §103 | Non-Final OA | — | Pending | Jan 17, 2023 |
| 17995698 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS INCLUDING THE SAME | KOO, LAMONT B | 2813 | §103 | Non-Final OA | — | Pending | Oct 06, 2022 |
| 17759226 | SEMICONDUCTOR DEVICE WITH C-SHAPED CHANNEL PORTION, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS INCLUDING THE SAME | WEGNER, AARON MICHAEL | 2897 | §102§103 | Final Rejection | — | Pending | Jul 21, 2022 |
| 17731853 | NANOWIRE/NANOSHEET DEVICE WITH SUPPORT PORTION, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC APPARATUS | PURVIS, SUE A | 2800 | §103Other | Final Rejection | — | Pending | Apr 28, 2022 |
| 18774529 | CALIBRATION METHOD, APPARATUS AND SYSTEM OF LOOK-AHEAD LOGGING-WHILE-DRILLING MEASURING DEVICE | SATANOVSKY, ALEXANDER | — | §101 | Non-Final OA | — | Pending | Jul 16, 2024 |
| 18643765 | METHOD FOR CORRECTING AGE OF COLUMBITE-TANTALITE BY USING DOUBLE-REFERENCE-MATERIALS | GOURLIE, LAURA ELOISE | 2881 | §101 | Non-Final OA | — | Pending | Apr 23, 2024 |
| 17988990 | METHOD AND SYSTEM FOR PREDICTING RELATIVE PERMEABILITY CURVE BASED ON MACHINE LEARNING | HANN, JAY B | 2186 | §103 | Final Rejection | 8d overdue | Pending | Nov 17, 2022 |
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