Prosecution Insights
Last updated: October 22, 2026
Application No. 18/769,412

INTEGRATED CIRCUIT STRUCTURE OF CAPACITIVE DEVICE

Non-Final OA §102
Filed
Jul 11, 2024
Priority
Jun 14, 2019 — divisional of 10/867,904 +2 more
Examiner
QUINTO, KEVIN V
Art Unit
Tech Center
Assignee
Taiwan Semiconductor Manufacturing Company, Ltd.
OA Round
1 (Non-Final)
85%
Grant Probability
Favorable
1-2
OA Rounds
3m
Est. Remaining
87%
With Interview

Examiner Intelligence

Grants 85% — above average
85%
Career Allowance Rate
738 granted / 867 resolved
+25.1% vs TC avg
Minimal +2% lift
Without
With
+1.7%
Interview Lift
resolved cases with interview
Typical timeline
2y 6m
Avg Prosecution
19 currently pending
Career history
900
Total Applications
across all art units

Statute-Specific Performance

§101
0.6%
-39.4% vs TC avg
§103
49.3%
+9.3% vs TC avg
§102
31.7%
-8.3% vs TC avg
§112
15.4%
-24.6% vs TC avg
Black line = Tech Center average estimate • Based on career data from 867 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1, 6, and 19 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Kanaya (United States Patent Application Publication No. US 2008/0217669 A1, hereinafter “Kanaya”). In reference to claim 1, Kanaya discloses a structure which meets the claim. An annotated version of fig. 1 of Kanaya is provided below. Fig. 1 of Kanaya discloses an integrated circuit structure comprising a first capacitor structure (M00, M01) with a plurality of capacitors (M00, M01) disposed over a semiconductor substrate. A second capacitor structure (DC00, DC01) is adjacent to the first capacitor structure (M00, M01). The examiner notes that the currently filed specification, in fig. 4, uses conductive lines (4082, 4084) as plates (p. 9, paragraph 38). Thus annotated fig. 1 of Kanaya shows that there is a first conductive plate in the form of a conductive line extending into and out of the page (p. 2, paragraph 31). Fig. 1 also shows that the first conductive plate is disposed over a first end of the second capacitor structure (DC00, DC01). The first conductive plate has a lateral side facing a lateral side of each of the first (M00, M01) and second (DC00, DC01) capacitor structures. There is a second conductive plate disposed over and across at least one of the first capacitor structure (M00, M01) and the second capacitor structure (DC00, DC01). PNG media_image1.png 464 700 media_image1.png Greyscale In reference to claim 6, Kanaya discloses a structure which meets the claim. An annotated version of fig. 1 of Kanaya is provided below. Fig. 1 of Kanaya discloses an integrated circuit structure which comprises a capacitor structure (M00) disposed in a first layer over a semiconductor substrate. Kanaya discloses a dummy capacitor (DC01) which has a lower dummy electrode made of the metal iridium (p. 4, paragraph 49). Thus there is a dummy metal structure (DC01) in the form of an iridium dummy lower electrode for the dummy capacitor (DC01) which is adjacent to the capacitor structure (M00) in the first layer. The examiner notes that the currently filed specification, in fig. 4, uses conductive lines (4082, 4084) as plates (p. 9, paragraph 38). Thus annotated fig. 1 of Kanaya shows that there is a first conductive plate in the form of a conductive line extending into and out of the page (p. 2, paragraph 31). Fig. 1 shows that the first conductive plate is disposed adjacent to the dummy metal structure (DC01). Each of the capacitor structure (M00) and the first conductive plate has a side facing a side of the dummy metal structure (DC01). There is a second conductive plate (M2) disposed in a second layer over the semiconductor substrate different from the first layer. The second conductive player (M2) extends from a first end of the dummy metal structure (DC01) to a second end of the dummy metal structure (DC01) opposite to the first end. PNG media_image2.png 464 700 media_image2.png Greyscale In reference to claim 19, Kanaya discloses a method which meets the claim. An annotated version of fig. 1 of Kanaya is provided below. Fig. 1 of Kanaya discloses a method of manufacturing an integrated circuit structure which comprises forming a first capacitor structure (M01) over a semiconductor substrate. Fig. 2 shows that a second capacitor structure (M00) is formed adjacent to and connected to the first capacitor structure (M00) by their common lower electrode. The examiner notes that the currently filed specification, in fig. 4, uses conductive lines (4082, 4084) as plates (p. 9, paragraph 38). Thus annotated fig. 1 of Kanaya shows that there is a first conductive plate in the form of a conductive line extending into and out of the page (p. 2, paragraph 31). Fig. 1 shows that the first conductive plate is formed on a first end of the second capacitor structure (M00). The first conductive plate has a lateral side facing a lateral side of each of the first (M01) and second (M00) capacitor structures. There is a second conductive plate (M2) that is formed and disposed over at least one of the first capacitor structure (M01) and the second capacitor structure (M00). PNG media_image3.png 424 632 media_image3.png Greyscale Allowable Subject Matter Claims 2-5, 7-18, and 20 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. The following is a statement of reasons for the indication of allowable subject matter: in the examiner’s opinion, it would not be obvious to implement an integrated circuit structure which comprises first and second capacitor structures disposed over a semiconductor substrate that are adjacent to each other such that the first capacitor structure has a plurality of capacitors in combination with the suggested positions of first, second, and third conductive plates and the specific coupling between the first and third conductive plates as required by the applicant in claims 2 and 5. In the examiner’s opinion, it would also not be obvious to implement an integrated circuit structure which comprises a capacitor structure and a dummy metal structure disposed over a semiconductor substrate that are adjacent to each other with a first conductive plate adjacent to the dummy metal structure such that the capacitor structure and the first conductive plate each has a side facing a side of the dummy metal structure in combination with the suggested position of a second conductive plate and the specific connection structures between the first and second conductive plates as required by the applicant in claim 7. In the examiner’s opinion, it would also not be obvious to implement a method of manufacturing an integrated circuit structure which comprises forming first and second capacitor structures over a semiconductor substrate that are adjacent and connected to each other in combination with the suggested positions of first, second, and third conductive plates and the specific coupling between the first and third conductive plates as required by the applicant in claim 20. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to KEVIN QUINTO whose telephone number is (571)272-1920. The examiner can normally be reached Monday-Friday, 9-5:30. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Britt Hanley can be reached at 571-270-3042. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /KEVIN QUINTO/Examiner, Art Unit 2893 /Britt Hanley/Supervisory Patent Examiner, Art Unit 2893
Read full office action

Prosecution Timeline

Jul 11, 2024
Application Filed
Oct 05, 2026
Non-Final Rejection mailed — §102 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12772443
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
3y 6m to grant Granted Oct 20, 2026
Patent 12772431
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
3y 2m to grant Granted Oct 20, 2026
Patent 12772587
MICROLENS ARRAY AND MANUFACTURING METHOD THEREOF
3y 0m to grant Granted Oct 20, 2026
Patent 12757707
SEMICONDUCTOR DEVICE WITH POLYMER LINER AND METHOD FOR FABRICATING THE SAME
2y 11m to grant Granted Oct 06, 2026
Patent 12750995
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
3y 5m to grant Granted Sep 29, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

Strategy Recommendation AI-generated — please review before filing

Get a prosecution strategy drawn from examiner precedents, rejection analysis, and claim mapping.
Typically takes 5-10 seconds — AI-generated, attorney review required before filing

Prosecution Projections

1-2
Expected OA Rounds
85%
Grant Probability
87%
With Interview (+1.7%)
2y 6m (~3m remaining)
Median Time to Grant
Low
PTA Risk
Based on 867 resolved cases by this examiner. Grant probability derived from career allowance rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month