Prosecution Insights
Last updated: October 02, 2026
Application No. 18/771,442

EFFICIENT CLEANING AND ETCHING OF HIGH ASPECT RATIO STRUCTURES

Non-Final OA §112§DOUBLEPATENT
Filed
Jul 12, 2024
Priority
Jun 13, 2018 — provisional 62/684,415 +3 more
Examiner
DEO, DUY VU NGUYEN
Art Unit
1713
Tech Center
1700 — Chemical & Materials Engineering
Assignee
Lam Research Corporation
OA Round
1 (Non-Final)
82%
Grant Probability
Favorable
1-2
OA Rounds
2m
Est. Remaining
90%
With Interview

Examiner Intelligence

Grants 82% — above average
82%
Career Allowance Rate
864 granted / 1049 resolved
+17.4% vs TC avg
Moderate +7% lift
Without
With
+7.3%
Interview Lift
resolved cases with interview
Typical timeline
2y 4m
Avg Prosecution
35 currently pending
Career history
1063
Total Applications
across all art units

Statute-Specific Performance

§101
0.4%
-39.6% vs TC avg
§103
44.9%
+4.9% vs TC avg
§102
26.7%
-13.3% vs TC avg
§112
13.7%
-26.3% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1049 resolved cases

Office Action

§112 §DOUBLEPATENT
CTNF 18/771,442 CTNF 75770 DETAILED ACTION Notice of Pre-AIA or AIA Status 07-03-aia AIA 15-10-aia The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA. Claim Rejections - 35 USC § 112 07-30-02 AIA The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 8-15 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Claim 8 is vague and indefinite because claim 8 recites “a plurality of cycles including a) and b)”; however, it is not clear what steps in claim 1 that “a plurality cycles of a) and b)” refers to. With respect to claim 10, it is similar to claim 8, it is not clear what step in claim 1, that “b)” referring to. With respect to claim 15, it is similar to claim 8, it is not clear what steps in claim 1, that “wherein a) and b)” referring to. Claims 9, 11-14 are rejected for depending on rejected claims 8 and 10 above. Double Patenting 08-33 AIA The nonstatutory double patenting rejection is based on a judicially created doctrine grounded in public policy (a policy reflected in the statute) so as to prevent the unjustified or improper timewise extension of the “right to exclude” granted by a patent and to prevent possible harassment by multiple assignees. A nonstatutory double patenting rejection is appropriate where the conflicting claims are not identical, but at least one examined application claim is not patentably distinct from the reference claim(s) because the examined application claim is either anticipated by, or would have been obvious over, the reference claim(s). See, e.g., In re Berg , 140 F.3d 1428, 46 USPQ2d 1226 (Fed. Cir. 1998); In re Goodman , 11 F.3d 1046, 29 USPQ2d 2010 (Fed. Cir. 1993); In re Longi , 759 F.2d 887, 225 USPQ 645 (Fed. Cir. 1985); In re Van Ornum , 686 F.2d 937, 214 USPQ 761 (CCPA 1982); In re Vogel , 422 F.2d 438, 164 USPQ 619 (CCPA 1970); In re Thorington , 418 F.2d 528, 163 USPQ 644 (CCPA 1969). A timely filed terminal disclaimer in compliance with 37 CFR 1.321(c) or 1.321(d) may be used to overcome an actual or provisional rejection based on nonstatutory double patenting provided the reference application or patent either is shown to be commonly owned with the examined application, or claims an invention made as a result of activities undertaken within the scope of a joint research agreement. See MPEP § 717.02 for applications subject to examination under the first inventor to file provisions of the AIA as explained in MPEP § 2159. See MPEP § 2146 et seq. for applications not subject to examination under the first inventor to file provisions of the AIA. A terminal disclaimer must be signed in compliance with 37 CFR 1.321(b). The filing of a terminal disclaimer by itself is not a complete reply to a nonstatutory double patenting (NSDP) rejection. A complete reply requires that the terminal disclaimer be accompanied by a reply requesting reconsideration of the prior Office action. Even where the NSDP rejection is provisional the reply must be complete. See MPEP § 804, subsection I.B.1. For a reply to a non-final Office action, see 37 CFR 1.111(a). For a reply to final Office action, see 37 CFR 1.113(c). A request for reconsideration while not provided for in 37 CFR 1.113(c) may be filed after final for consideration. See MPEP §§ 706.07(e) and 714.13. The USPTO Internet website contains terminal disclaimer forms which may be used. Please visit www.uspto.gov/patent/patents-forms. The actual filing date of the application in which the form is filed determines what form (e.g., PTO/SB/25, PTO/SB/26, PTO/AIA/25, or PTO/AIA/26) should be used. A web-based eTerminal Disclaimer may be filled out completely online using web-screens. An eTerminal Disclaimer that meets all requirements is auto-processed and approved immediately upon submission. For more information about eTerminal Disclaimers, refer to www.uspto.gov/patents/apply/applying-online/eterminal-disclaimer. 08-34 AIA Claim s 1-16 are rejected on the ground of nonstatutory double patenting as being unpatentable over claim s 1-16 of U.S. Patent No. 11,488,831 and over claims 1-16 of U.S. Patent No. 12,040,193 . Although the claims at issue are not identical, they are not patentably distinct from each other because they all describe a method for treating a substrate by providing a vaporized solvent and a reactive gas of halogen species of HF, HCl, or HBr to form a conformal liquid layer, which absorbs the reactive gas to form a reactive liquid layer to etch the substrate at an etch rate in the range of 10 angstroms/min to 100 angstroms/min. The process has the same processing pressure and temperature and forms a gaseous by product without forming residue . Allowable Subject Matter Claims 1-16 are allowed over the prior art because the closest prior art Liu (US 8,187,486) doesn’t teach forming a reactive liquid layer on a substrate by concurrently supplying a vaporized solvent and a reactive gas including a halogen species, to etch the substrate by forming a gaseous byproduct without forming residue. Liu teaches an etching with water vapor and HF that forms a solid reaction product (fig. 4, col. 5, lines 1-10). Any inquiry concerning this communication or earlier communications from the examiner should be directed to DUY VU NGUYEN DEO whose telephone number is (571)272-1462. The examiner can normally be reached 9-5 M-F. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Joshua Allen can be reached at 571-272-3176. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent- center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /DUY VU N DEO/Primary Examiner, Art Unit 1713 5/4/2026 Application/Control Number: 18/771,442 Page 2 Art Unit: 1713 Application/Control Number: 18/771,442 Page 3 Art Unit: 1713 Application/Control Number: 18/771,442 Page 4 Art Unit: 1713 Application/Control Number: 18/771,442 Page 5 Art Unit: 1713 Application/Control Number: 18/771,442 Page 6 Art Unit: 1713
Read full office action

Prosecution Timeline

Jul 12, 2024
Application Filed
May 08, 2026
Non-Final Rejection mailed — §112, §DOUBLEPATENT (current)

Precedent Cases

Applications granted by this same examiner with similar technology

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3y 1m to grant Granted Sep 22, 2026
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Patent 12727412
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METHOD FOR PROCESSING A SUBSTRATE
2y 5m to grant Granted Sep 01, 2026
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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
82%
Grant Probability
90%
With Interview (+7.3%)
2y 4m (~2m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1049 resolved cases by this examiner. Grant probability derived from career allowance rate.

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