Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 1713 1716 1765 1792 1794 2817
This examiner grants 82% of resolved cases
Duy Vu Nguyen Deo examines applications in Art Unit 1713 of Tech Center 2800. He has 1049 resolved cases and an allowance rate of 82.4 percent. This 82.4 percent rate indicates the probability of success for applications assigned to him. The 1049 resolved cases provide a robust foundation for evaluating his examination history in Tech Center 2800.
The median time to allowance for these cases is 873 days. The interview lift is 7.3 percent. This 7.3 percent lift indicates that cases involving an interview have a slightly higher probability of allowance than those without. Practitioners can use the 873-day median pendency and the 7.3 percent lift to plan their prosecution strategy in Art Unit 1713.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18947090 | ETCHING COMPOSITIONS, METHODS OF TREATING SUBSTRATES USING THE SAME, AND METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICES USING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18827593 | METHOD FOR MANUFACTURING PROCESSED SUBSTRATE | Non-Final OA | MERCK PATENT GMBH |
| 18867945 | ETCHING METHOD | Non-Final OA | Resonac Corporation |
| 18857335 | ABRASIVE GRAIN, SELECTION METHOD THEREFOR, POLISHING AGENT, MULTI-LIQUID POLISHING AGENT, POLISHING METHOD, COMPONENT MANUFACTURING METHOD, AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD | Non-Final OA | Resonac Corporation |
| 18857352 | SLURRY AND POLISHING METHOD | Non-Final OA | Resonac Corporation |
| 18856465 | CMP POLISHING LIQUID AND POLISHING METHOD | Non-Final OA | Resonac Corporation |
| 18294859 | POLISHING LIQUID FOR CMP, POLISHING LIQUID SET FOR CMP, AND POLISHING METHOD | Non-Final OA | Resonac Corporation |
| 18826539 | ETCHING METHODS AND PATTERNED SUBSTRATES MADE USING SAID METHODS | Non-Final OA | Ohio State Innovation Foundation |
| 18839177 | SELECTIVE PRECISION ETCHING OF SEMICONDUCTOR MATERIALS | Non-Final OA | Lam Research Corporation |
| 18771442 | EFFICIENT CLEANING AND ETCHING OF HIGH ASPECT RATIO STRUCTURES | Non-Final OA | LAM RESEARCH CORPORATION |
| 18780440 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18654400 | CONDITIONING PAD WITH DEPOSITED DIAMOND COATING | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18615579 | SEMICONDUCTOR PROCESSING TOOL AND METHODS OF OPERATION | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18626693 | SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18864038 | Formulated Alkaline Chemistry For Polysilicon Exhume | Non-Final OA | Versum Materials US, LLC |
| 18842609 | Stable Chemical Mechanical Planarization Polishing Compositions And Methods For High Rate Silicon Oxide Removal | Non-Final OA | Versum Materials US, LLC |
| 18713260 | Tungsten Chemical Mechanical Polishing Slurries | Non-Final OA | Versum Materials US, LLC |
| 18879868 | SUBSTRATE PROCESSING METHOD | Non-Final OA | SCREEN Holdings Co., Ltd. |
| 18853936 | COMPOSITION FOR CHEMICAL-MECHANICAL POLISHING AND METHOD FOR USING COMPOSITION | Non-Final OA | FUJIMI INCORPORATED |
| 19015964 | ETCHANT COMPOSITION FOR ETCHING SILICON AND METHOD OF FORMING PATTERN USING THE SAME | Non-Final OA | DONGWOO FINE-CHEM CO., LTD. |
| 18035865 | PLASMA-ACTIVATED LIQUIDS | Non-Final OA | The Board of Trustees of the University of Illinois |
| 18866369 | METHOD FOR PRODUCING AQUEOUS SOLUTION OF PURIFIED AMINOSILANOL COMPOUND AND AMINOSILOXANE COMPOUND, AND COMPOSITION FOR ETCHING | Non-Final OA | SHIN-ETSU CHEMICAL CO., LTD. |
| 18911657 | METHOD FOR RECYCLING RARE EARTH SINTERED MAGNET | Non-Final OA | SHIN-ETSU CHEMICAL CO., LTD. |
| 18847502 | SILICON POLISHING METHOD AND COMPOSITION FOR SILICON POLISHING | Non-Final OA | NORITAKE CO., LIMITED |
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