DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Claim Rejections - 35 USC § 102
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.
Claim(s) 1, 3-4, 7 and 31 is/are rejected under 35 U.S.C. 102a1 as being anticipated by Yu et al (US 2008/0173966).
1. (Currently Amended) A semiconductor device structure, comprising:
one or more bonding pads (Fig.4a (140/22a) and [0021]) disposed over a substrate (Fig.4a (110) and [0021]); and a first passivation layer (Fig.4a (200) and [0022]) disposed over the one or more bonding pads(Fig.4a (140/22a) and [0021]), wherein the first passivation layer (Fig.4a (26) and [0022]) comprises:
a first passivation sublayer (Fig.4a (26) and [0022]) comprising a first dielectric material, wherein the first dielectric material is a first oxide [0022], and the first passivation sublayer (Fig.4a (26) and [0022]) has a first thickness [0022];
a second passivation sublayer (Fig.4a (30/38) and [0022]) disposed over the first passivation sublayer (Fig.4a (26) and [0022]),wherein the second passivation sublayer Fig.4a (30/38) and [0022]) comprises a second dielectric material [0022]s the second dielectric material is a second oxide [0022], the second passivation sublayer (Fig.4a (30/38) and [0022]) is physically distinct from the first passivation sublayer (Fig.4a (26) and [0022]), and the second passivation sublaver has a second thickness (Fig.4a (30/38) and [0022]); and
a third passivation sublayer (Fig.4a (40/50) and [0022]) disposed over the second passivation sublayer (Fig.4a (30/38) and [0022]),wherein the third passivation sublayer (Fig.4a (40) and [0022]) comprises a third dielectric material [0022], the third dielectric material is a first nitride [0022], the third passivation sublayer (Fig.4a (40/50) and [0022]) is physically distinct from the second passivation sublayer (Fig.4a (30/38) and [0022]), and the third passivation sublayer(Fig.4a (40/50) and [0022]) has a third thickness ranging from about 1000 nm to about 2000 nm [0022] different from the first and second dielectric materials [0022].
3. (Currently Amended) The semiconductor device structure of claim [[2]] 1, wherein the first oxide is undoped silica glass (Fig.4a (26) and [0022]), and the second oxide is a high density plasma oxide (Fig.4a (30/38) and [0022], and the first nitride is silicon nitride (Fig.4a (40/50) and [0022]).
4. (Currently Amended) The semiconductor device structure of claim [[2]] 1, wherein the second thickness [0022] is substantially greater than the first thickness,[0022] and the third thickness [0022] is substantially greater than the first thickness [0022].
7. (Original) The semiconductor device structure of claim 1, wherein the third passivation sublayer (Fig.4a (40/50) and [0022]) further comprises a trench (Fig.4b (48) and [0023]..
31. (New) The semiconductor device structure of claim 1, wherein the first nitride is a metal nitride (Fig.4a (50) and [0022]).
Response to Arguments
Applicant’s arguments with respect to the above claim(s) have been considered but are moot because the new ground of rejection does not rely on any reference applied in the prior rejection of record for any teaching or matter specifically challenged in the argument.
Conclusion
The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Walter et al (US 2013/0234300); Tsai et al (US 6017614); and Hsiao (US 6277725) teach similar structures.
Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a).
A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action.
Any inquiry concerning this communication or earlier communications from the examiner should be directed to LAURA M MENZ whose telephone number is (571)272-1697. The examiner can normally be reached Monday-Friday 7:00-3:30.
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/LAURA M MENZ/Primary Examiner, Art Unit 2813
7/28/26
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