DETAILED ACTION
1. The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
This Office Action is in response to the communications dated 07/15/2024.
Claims 1-20 are pending in this application.
Acknowledges
2. Receipt is acknowledged of the following items from the Applicant.
Information Disclosure Statement (IDS) filed on 07/15/2024. The references cited on the PTOL 1449 form have been considered.
Applicant is requested to cite any relevant prior art if being aware on form PTO-1449 in accordance with the guidelines set for in M.P.E.P. 609.
Drawings
3. The drawings are objected to under 37 CFR 1.83(a). The drawings must show every feature of the invention specified in the claims. Therefore, the claimed feature(s) in claim 1:
“exposing a portion of the semiconductor fin by forming a patterned mask,”
and in claim 12:
“patterning the mask layer to expose a portion of a first semiconductor fin of the plurality of semiconductor fins,”
must be shown or the feature(s) canceled from the claim(s). No new matter should be entered.
Fig. 4C of the instant application best illustrates the above claimed feature. Paragraph [0064] of the specification describes:
“[0064] In FIG. 4C, the mask layer 410 is patterned to form an opening 450, as shown. .... As shown in FIG. 4C, the opening 450 is formed to expose the fin 323 and structures overlying the fin 323, such as the nanostructures 22A3-22C3, 24, the oxide layer 28 and the hard mask layer 29. The etching of the mask layer 410 that forms the opening 450 may stop on the hard mask layer 29 and the insulation material 36.”
However, Fig. 4C clearly shows that the patterned mask layer 410 having opening 450 only exposes the hard mask layer 29, and the insulation material 36. Opening 450 does not expose “a portion of the semiconductor fin” as recited in claim 1, nor does opening 450 expose the fin 323 and structures overlying the fin 323, such as the nanostructures 22A3-22C3, 24, the oxide layer 28 and the hard mask layer 29.
Since “the etching of the mask layer 410 that forms the opening 450 may stop on the hard mask layer 29 and the insulation material 36”, it is not understandable that how could the opening 450 expose the fin 323 and the structures overlying the fin 323, which are covered by the hard mask layer 29 and the insulation material 36. Fig. 4C, as well as any of other figures in the drawing, fails to show the above claimed and/or described features.
Corrected drawing sheets in compliance with 37 CFR 1.121(d) are required in reply to the Office action to avoid abandonment of the application. Any amended replacement drawing sheet should include all of the figures appearing on the immediate prior version of the sheet, even if only one figure is being amended. The figure or figure number of an amended drawing should not be labeled as “amended.” If a drawing figure is to be canceled, the appropriate figure must be removed from the replacement sheet, and where necessary, the remaining figures must be renumbered and appropriate changes made to the brief description of the several views of the drawings for consistency. Additional replacement sheets may be necessary to show the renumbering of the remaining figures. Each drawing sheet submitted after the filing date of an application must be labeled in the top margin as either “Replacement Sheet” or “New Sheet” pursuant to 37 CFR 1.121(d). If the changes are not accepted by the examiner, the applicant will be notified and informed of any required corrective action in the next Office action. The objection to the drawings will not be held in abeyance.
Specification
4. The specification has been checked to the extent necessary to determine the presence of possible minor errors. However, the applicant's cooperation is requested in correcting any errors of which applicant may become aware in the specification.
Claim Rejections - 35 USC § 112
5. The following is a quotation of 35 U.S.C. 112:
(a) IN GENERAL.— The specification shall contain a written description of the invention, and of the manner and process of making and using it, in such full, clear, concise, and exact terms as to enable any person skilled in the art to which it pertains, or with which it is most nearly connected, to make and use the same, and shall set forth the best mode contemplated by the inventor or joint inventor of carrying out the invention.
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(b) CONCLUSION.— The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention.
6. Claims 1-7, and 12-20 are rejected under 35 U.S.C. 112(a) as failing to comply with the written description requirement.
The claim(s) contains subject matters which were not described in the specification in such a way as to reasonably convey to one skilled in the relevant art that the inventor or a joint inventor, or for pre-AIA the inventor(s), at the time the application was filed, had possession of the claimed invention.
Claim 1 at line 7 recites:
“exposing a portion of the semiconductor fin by forming a patterned mask,”
and claim 12, lines 9-10 recites:
“patterning the mask layer to expose a portion of a first semiconductor fin of the plurality of semiconductor fins”.
Fig. 4C of the instant invention best illustrates such claimed features.
Paragraph [0064] of the instant specification describes:
“[0064] In FIG. 4C, the mask layer 410 is patterned to form an opening 450, as shown. .... As shown in FIG. 4C, the opening 450 is formed to expose the fin 323 and structures overlying the fin 323, such as the nanostructures 22A3-22C3, 24, the oxide layer 28 and the hard mask layer 29. The etching of the mask layer 410 that forms the opening 450 may stop on the hard mask layer 29 and the insulation material 36.”
However, Fig. 4C clearly shows that the patterned mask layer 410 having opening 450 only exposes the hard mask layer 29, and the insulation material 36. Opening 450 does not expose “a portion of the semiconductor fin” recited in claim 1, “a portion of a first semiconductor fin” in claim 12, nor does opening 450 expose the fin 323 and structures overlying the fin 323, such as the nanostructures 22A3-22C3, 24, the oxide layer 28 and the hard mask layer 29 described at para. 0064 in the specification.
Since “the etching of the mask layer 410 that forms the opening 450 may stop on the hard mask layer 29 and the insulation material 36” (specification, para. 0064), it is not understandable that how could the opening 450 expose the fin 323 and the structures overlying the fin 323, which are covered by the hard mask layer 29 and the insulation material 36. Fig. 4C, as well as any of other figures in the drawing, fails to show the above claimed and/or described features.
Accordingly, the claim (comprising claims 1-7, and 12-20) contains subject matter which was not described in the specification in such a way as to reasonably convey to one skilled in the relevant art that the inventor or a joint inventor, or for pre-AIA the inventor(s), at the time the application was filed, had possession of the claimed invention.
Allowance / Reasons for Allowance
7. Claims 8-11 are allowed.
Prior art which is closest to the subject matters of the claimed invention(s):
Glass et al. (US 2020/0105871)
Glass discloses:
A method, comprising:
forming a multilayer lattice of alternating layers of a first semiconductor material 404 and a second semiconductor material 406 (see Fig. 4C);
forming a first vertical stack of nanostructures 404’ & 406’ or 605 over a first semiconductor fin 418, 604 (Fig. 4D, or Fig. 6);
forming a second vertical stack of nanostructures 404’ & 406’ or 605 over a second semiconductor fin 418, 604, the second vertical stack being laterally separated from the first vertical stack in a first direction; and
forming a fin isolation structure 660 between the first and second vertical stacks.
Glass fails to disclose:
The fin isolation structure contacting a third vertical stack of nanostructures over a third semiconductor fin in a second direction transverse to the first direction and contacting a source/drain region in the second direction.
Conclusion
8. A shortened statutory period for response to this action is set to expire 3 (three) months and 0 (zero) day from the day of this letter. Failure to respond within the period for response will cause the application to become abandoned (see M.P.E.P 710.02(b)).
A shortened time for reply may be extended up to the maximum six-month period (35 U.S.C. 133). An extension of time fee is normally required to be paid if the reply period is extended. The amount of the fee is dependent upon the length of the extension. Extensions of time are generally not available after an application has been allowed.
Any inquiry concerning this communication or earlier communications from the examiner should be directed to Dao H. Nguyen whose telephone number is (571)272-1791. The examiner can normally be reached on Monday-Friday, 9:00 AM – 5:00 PM. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Steven Loke, can be reached on (571)272-1657. The fax numbers for all communication(s) is 571-273-8300.
Any inquiry of a general nature or relating to the status of this application or proceeding should be directed to the receptionist whose telephone number is (571)272-1633.
/DAO H NGUYEN/Primary Examiner, Art Unit 2818 October 7, 2026
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