Tech Center 2800 • Art Units: 2818
This examiner grants 91% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 17882203 | 3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN INNER SPACERS FORMED USING CHANNEL ISOLATION STRUCTURE INCLUDING THIN SILICON LAYER | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18383404 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS | Non-Final OA | LG Display Co., Ltd. |
| 18324231 | STRUCTURE AND METHOD FOR SEMICONDUCTOR PACKAGING | Final Rejection | TEXAS INSTRUMENTS INCORPORATED |
| 18134144 | VERTICAL TRENCH GATE MOSFET WITH INTEGRATED SCHOTTKY DIODE | Non-Final OA | Texas Instruments Incorporated |
| 18324071 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | HUAWEI TECHNOLOGIES CO., LTD. |
| 18537506 | MODULAR PACKAGE STRUCTURES WITH INTERPOSERS HAVING ALIGNMENT FEATURES | Non-Final OA | International Business Machines Corporation |
| 18449986 | LOCAL TRAPPED METAL CONTACT FOR STACKED FET | Non-Final OA | International Business Machines Corporation |
| 18359922 | SHARED SOURCE/DRAIN CONTACT FOR STACKED TRANSISTORS | Non-Final OA | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 18125430 | SEMICONDUCTOR DEVICES BETWEEN GATE CUTS AND DEEP BACKSIDE VIAS | Non-Final OA | Intel Corporation |
| 17957821 | GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING | Non-Final OA | Intel Corporation |
| 17891536 | SPLIT METALLIZATION LAYERS IN MULTICHIP DEVICES | Non-Final OA | Intel Corporation |
| 18405570 | HYBRID SUBSTRATE WITH EMBEDDED COMPONENT | Non-Final OA | QUALCOMM Incorporated |
| 18463882 | PACKAGE COMPRISING A PACKAGE SUBSTRATE THAT INCLUDES AN ENCAPSULATED PORTION WITH INTERCONNECTION PORTION BLOCKS | Non-Final OA | QUALCOMM Incorporated |
| 18761324 | DIE STACK STRUCTURE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18474606 | THROUGH SILICON VIA WITH TEXTURED STRUCTURE AND FOOTING FEATURES | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18334350 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18454835 | Gate All-Around (GAA) Field Effect Transistors (FETS) Formed on Both Sides of a Substrate | Non-Final OA | Marvell Asia Pte Ltd |
| 18309933 | CHIP STACKING WITH BOND PAD ABOVE A BONDLINE | Non-Final OA | SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
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