DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Priority
Acknowledgment is made of applicant’s claim for foreign priority under 35 U.S.C. 119 (a)-(d). The certified copy has been filed on July 24, 2024
Information Disclosure Statement
The information disclosure statement (IDS) submitted on July 19, 2024 is being considered by the examiner.
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Specification
The title of the invention is not descriptive. A new title is required that is clearly indicative of the invention to which the claims are directed.
The following title is suggested: Semiconductor Device With Two-Dimensional Channel and Method for Fabricating the Same
Claim Rejections - 35 USC § 112
The following is a quotation of 35 U.S.C. 112(b):
(b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention.
The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph:
The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention.
Claims 1-12 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention.
Claim 1 recites the limitation "the device units" in line 2. There is insufficient antecedent basis for this limitation in the claim. For purposes of examination this will be interpreted as “the plurality of device units”
Claim 7 recites the limitation "the openings" in line 4. There is insufficient antecedent basis for this limitation in the claim. For purposes of examination this will be interpreted as “the plurality of openings”
Claim 7 recites the limitation "the device units" in lines 5-6. There is insufficient antecedent basis for this limitation in the claim. For purposes of examination this will be interpreted as “the plurality of device units”
Claim 7 recites the limitation "the recesses" in lines 9-10. There is insufficient antecedent basis for this limitation in the claim. For purposes of examination this will be interpreted as “the plurality of recesses”
Allowable Subject Matter
Claims 1-12 would be allowed if rewritten to overcome the 112 rejections above.
The following is a statement of reasons for the indication of allowable subject matter: the closest prior art of record, Kim (US 2018/0277543), fail to disclose (by themselves or in combination) the following limitations in combination with the rest of the claim:
Regarding Claim 1 (from which claims 2-6 depend), a first channel layer disposed on the gate electrode layer, wherein the first channel layer includes a two-dimensional semiconductor material…
Regarding Claim 7 (from which claims 8-12 depend), forming a first channel layer disposed on one gate electrode layer of the gate electrode layers, wherein the first channel layer comprises a two-dimensional semiconductor material…
Conclusion
The prior art made of record and not relied upon is considered pertinent to applicant's disclosure.
Kim (US 2018/0277543) discloses (Figs. 3A-3B) a substrate 100 with two source/drain regions SD1/SD2, gate region GE, a channel CH1 on and inside GE, SD1/SD2 coplanar with GE. Kim does not disclose two air spacers below the channel layer and between the gate region and source and drain.
Any inquiry concerning this communication or earlier communications from the examiner should be directed to GUSTAVO G RAMALLO whose telephone number is (571)272-9227. The examiner can normally be reached Monday-Friday 10am - 6pm.
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/GUSTAVO G RAMALLO/Examiner, Art Unit 2812