DETAILED ACTION
Double Patenting
The nonstatutory double patenting rejection is based on a judicially created doctrine grounded in public policy (a policy reflected in the statute) so as to prevent the unjustified or improper timewise extension of the “right to exclude” granted by a patent and to prevent possible harassment by multiple assignees. A nonstatutory double patenting rejection is appropriate where the conflicting claims are not identical, but at least one examined application claim is not patentably distinct from the reference claim(s) because the examined application claim is either anticipated by, or would have been obvious over, the reference claim(s). See, e.g., In re Berg, 140 F.3d 1428, 46 USPQ2d 1226 (Fed. Cir. 1998); In re Goodman, 11 F.3d 1046, 29 USPQ2d 2010 (Fed. Cir. 1993); In re Longi, 759 F.2d 887, 225 USPQ 645 (Fed. Cir. 1985); In re Van Ornum, 686 F.2d 937, 214 USPQ 761 (CCPA 1982); In re Vogel, 422 F.2d 438, 164 USPQ 619 (CCPA 1970); In re Thorington, 418 F.2d 528, 163 USPQ 644 (CCPA 1969).
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Claims 1-8 and 18-20 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1-3, 6-7, and 20 of U.S. Patent No. 11,605,477, provided in information disclosure statement filed 7/23/2024, hereinafter ‘477. Although the claims at issue are not identical, they are not patentably distinct from each other because they claim the same or identical invention with the same limitations as shown in the table below.
Clams of the Instant application
Claims of ‘477
1. An EUV light source apparatus, comprising:
an excitation laser inlet port configured to receive an excitation laser; and
a first mirror configured to reflect the excitation laser that passes through a zone of excitation, wherein a metal droplet is irradiated by the excitation laser.
1. A method of operating an extreme ultra violet (EUV) light source apparatus, the EUV light source comprising, a metal droplet generator, a collector mirror, an excitation laser inlet port for receiving an excitation laser, a first mirror and a second mirror, the method comprising:
introducing the excitation laser from the inlet port;
reflecting the excitation laser that passes through a zone of excitation by the first mirror; and
further reflecting the excitation laser reflected by the first mirror by the second mirror.
2. The EUV light source apparatus of claim 1, further comprising a second mirror configured to reflect the excitation laser reflected by the first mirror toward the zone of excitation.
3. The EUV light source apparatus of claim 2, wherein the second mirror is configured to focus the excitation laser reflected by the first mirror at the zone of excitation.
2. The method of claim 1, comprising directing the excitation laser reflected by the second mirror to pass through the zone of excitation.
4. The EUV light source apparatus of claim 1, further comprising a second mirror configured to reflect the excitation laser reflected by the first mirror toward a collector mirror of the EUV light source apparatus.
7. The method of claim 5, comprising directing the excitation laser reflected by the second mirror to hit the collector mirror.
5. The EUV light source apparatus of claim 1, further comprising a second mirror configured to reflect the excitation laser reflected by the first mirror toward a metal droplet catcher.
3. The method of claim 2, comprising directing the excitation laser reflected by the second mirror to hit a metal droplet catcher.
6. The EUV light source apparatus of claim 5, wherein the second mirror is configured to reflect the excitation laser reflected by the first mirror toward the metal droplet catcher after passing through the zone of excitation.
2. The method of claim 1, comprising directing the excitation laser reflected by the second mirror to pass through the zone of excitation.
3. The method of claim 2, comprising directing the excitation laser reflected by the second mirror to hit a metal droplet catcher.
7. The EUV light source apparatus of claim 1, further comprising a second mirror configured to reflect the excitation laser reflected by the first mirror toward a debris collection mechanism.
6. The method of claim 5, comprising directing the excitation laser reflected by the second mirror to hit a part of a debris collection mechanism.
8. The EUV light source apparatus of claim 7, wherein at least one of the first mirror or the second mirror is a flat mirror.
20. The EUV light source apparatus of claim 13, wherein at least one of the first mirror or the second mirror is a flat mirror.
17. A method of operating an EUV light source apparatus, the EUV light source comprising an excitation laser inlet port for receiving an excitation laser and a first mirror, and the method comprising:
introducing the excitation laser from the excitation laser inlet port; and
reflecting the excitation laser that passes through a zone of excitation by the first mirror toward a target location inside the EUV light source apparatus.
18. The method of claim 17, wherein the target location is a second mirror, and the method further comprises reflecting the excitation laser reflected by the first mirror by the second mirror.
1. A method of operating an extreme ultra violet (EUV) light source apparatus, the EUV light source comprising, a metal droplet generator, a collector mirror, an excitation laser inlet port for receiving an excitation laser, a first mirror and a second mirror, the method comprising:
introducing the excitation laser from the inlet port;
reflecting the excitation laser that passes through a zone of excitation by the first mirror; and
further reflecting the excitation laser reflected by the first mirror by the second mirror.
19. The method of claim 18, further comprising directing the excitation laser reflected by the second mirror to pass through the zone of excitation.
2. The method of claim 1, comprising directing the excitation laser reflected by the second mirror to pass through the zone of excitation.
20. The method of claim 19, further comprising directing the excitation laser reflected by the second mirror to hit a metal droplet catcher.
3. The method of claim 2, comprising directing the excitation laser reflected by the second mirror to hit a metal droplet catcher.
As seen from the mapping above, claims 1-3, 6-7, and 20 of ‘477 includes all the limitations of claims 1-8 and 18-20 of the instant application while also reciting further limitations. As such, the recited claims are not patentably distinct from each other.
The various dependent claims are merely obvious variants.
Claims 1-20 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1-16 of U.S. Patent No. 12,119,129, hereinafter ‘129. Although the claims at issue are not identical, they are not patentably distinct from each other because they claim the same or identical invention with the same limitations as shown in the table below.
Claims of the instant application
Claims of ‘129
1. An EUV light source apparatus, comprising:
an excitation laser inlet port configured to receive an excitation laser; and
a first mirror configured to reflect the excitation laser that passes through a zone of excitation, wherein a metal droplet is irradiated by the excitation laser.
2. The EUV light source apparatus of claim 1, further comprising a second mirror configured to reflect the excitation laser reflected by the first mirror toward the zone of excitation.
1. An extreme ultra violet (EUV) light source apparatus, comprising:
a collector mirror;
an excitation laser inlet port configured to receive an excitation laser;
a first mirror configured to reflect the excitation laser that passes through a zone of excitation; and
a second mirror configured to reflect the excitation laser reflected by the first mirror.
3. The EUV light source apparatus of claim 2, wherein the second mirror is configured to focus the excitation laser reflected by the first mirror at the zone of excitation.
3. The EUV light source apparatus of claim 2, wherein the second mirror is configured to focus the excitation laser reflected by the first mirror at the zone of excitation.
4. The EUV light source apparatus of claim 1, further comprising a second mirror configured to reflect the excitation laser reflected by the first mirror toward a collection mirror of the EUV light source apparatus.
4. The EUV light source apparatus of claim 1, wherein the second mirror is configured to reflect the excitation laser reflected by the first mirror toward the collector mirror.
5. The EUV light source apparatus of claim 1, further comprising a second mirror configured to reflect the excitation laser reflected by the first mirror toward a metal droplet catcher.
5. The EUV light source apparatus of claim 1, wherein the second mirror is configured to reflect the excitation laser reflected by the first mirror toward a metal droplet catcher.
6. The EUV light source apparatus of claim 5, wherein the second mirror is configured to reflect the excitation laser reflected by the first mirror toward the metal droplet catcher after passing through the zone of excitation.
6. The EUV light source apparatus of claim 5, wherein the second mirror is configured to reflect the excitation laser reflected by the first mirror toward the metal droplet catcher after passing through the zone of excitation.
7. The EUV light source apparatus of claim 1, further comprising a second mirror configured to reflect the excitation laser reflected by the first mirror toward a debris collection mechanism.
7. The EUV light source apparatus of claim 1, wherein the second mirror is configured to reflect the excitation laser reflected by the first mirror toward a debris collection mechanism.
8. The EUV light source apparatus of claim 1, wherein at least one of the first mirror or the second mirror is a flat mirror.
8. The EUV light source apparatus of claim 1, wherein at least one of the first mirror or the second mirror is a flat mirror.
9. An EUV light source apparatus, comprising:
an excitation laser inlet port configured to receive an excitation laser;
a first mirror configured to reflect the excitation laser that passes through a zone of excitation, wherein a metal droplet is irradiated by the excitation laser;
a second mirror configured to reflect the excitation laser reflected by the first mirror; and
a third mirror configured to reflect the excitation laser reflected by the second mirror.
9. An extreme ultra violet (EUV) light source apparatus, comprising:
a collector mirror;
an excitation laser inlet port configured to receive an excitation laser;
a first mirror configured to reflect the excitation laser that passes through a zone of excitation;
a second mirror configured to reflect the excitation laser reflected by the first mirror; and
a third mirror configured to reflect the excitation laser reflected by the second mirror.
10. The EUV light source apparatus of claim 9, wherein the second mirror is configured to reflect the excitation laser reflected by the first mirror toward the zone of excitation.
10. The EUV light source apparatus of claim 9, wherein the second mirror is configured to reflect the excitation laser reflected by the first mirror toward the zone of excitation.
11. The EUV light source apparatus of claim 10, wherein the second mirror is configured to focus the excitation laser reflected by the first mirror at the zone of excitation.
11. The EUV light source apparatus of claim 10, wherein the second mirror is configured to focus the excitation laser reflected by the first mirror at the zone of excitation.
12. The EUV light source apparatus of claim 9, wherein the third mirror is configured to reflect the excitation laser reflected by the first mirror toward a debris collection mechanism.
12. The EUV light source apparatus of claim 9, wherein the third mirror is configured to reflect the excitation laser reflected by the first mirror toward a debris collection mechanism.
13. The EUV light source apparatus of claim 9, further comprising a controller configured to control at least one of the first mirror or the second mirror.
13. The EUV light source apparatus of claim 9, further comprising a controller configured to control at least one of the first mirror or the second mirror.
14. The EUV light source apparatus of claim 13, further comprising a sensor configured to monitor or detect deposition of metal debris,
wherein the controller is configured to control at least one of the first mirror or the second mirror based on a monitoring result of the sensor.
14. The EUV light source apparatus of claim 13, further comprising a sensor configured to monitor or detect deposition of metal debris,
wherein the controller is configured to control at least one of the first mirror or the second mirror based on a monitoring result of the sensor.
15. The EUV light source apparatus of claim 14, wherein the sensor is a camera.
15. The EUV light source apparatus of claim 14, wherein the sensor is a camera.
16. The EUV light source apparatus of claim 14, wherein when the sensor detects an excessive debris deposition above a threshold, the controller is configured to control the at least one of the first mirror or the second mirror to direct the excitation laser reflected by the second mirror to the excessive debris deposition.
16. The EUV light source apparatus of claim 14, wherein when the sensor detects an excessive debris deposition above a threshold, the controller is configured to control the at least one of the first mirror or the second mirror to direct the excitation laser reflected by the second mirror to the excessive debris deposition.
17. A method of operating an EUV light source apparatus, the EUV light source comprising an excitation laser inlet port for receiving an excitation laser and a first mirror, and the method comprising:
introducing the excitation laser from the excitation laser inlet port; and
reflecting the excitation laser that passes through a zone of excitation by the first mirror toward a target location inside the EUV light source apparatus.
18. The method of claim 17, wherein the target location is a second mirror, and the method further comprises reflecting the excitation laser reflected by the first mirror by the second mirror.
1. An extreme ultra violet (EUV) light source apparatus, comprising:
a collector mirror;
an excitation laser inlet port configured to receive an excitation laser;
a first mirror configured to reflect the excitation laser that passes through a zone of excitation; and
a second mirror configured to reflect the excitation laser reflected by the first mirror.
19. The method of claim 18, further comprising directing the excitation laser reflected by the second mirror to pass through the zone of excitation.
2. The EUV light source apparatus of claim 1, wherein the second mirror is configured to reflect the excitation laser reflected by the first mirror toward the zone of excitation.
20. The method of claim 19, further comprising directing the excitation laser reflected by the second mirror to hit a metal droplet catcher.
5. The EUV light source apparatus of claim 1, wherein the second mirror is configured to reflect the excitation laser reflected by the first mirror toward a metal droplet catcher.
As seen from the mapping above, claims 1-16 of ‘129 includes all the limitations of claims 1-20 of the instant application while also reciting further limitations.
While the claims of ‘129 (specifically claims 1 and 9) do not explicitly state the metal droplet is irradiated by the excitation laser, ‘129 discloses the excitation laser interacts with the metal droplet passing through a zone of excitation to generate metal plasma and/or to locally heat the inside the LPP EUV light source apparatus (see col. 13, lines 6-15). In light of this teaching, it would have been obvious to the ordinary artisan before the effective filing date to have the excitation laser interact with the target material to generate EUV light for the purpose of improving operation efficiency of the excitation laser source as taught by the specification of ‘129.
The various dependent claims are merely obvious variants.
Conclusion
Any inquiry concerning this communication or earlier communications from the examiner should be directed to HANWAY CHANG whose telephone number is (571)270-5766. The examiner can normally be reached Monday - Friday 7:30 AM - 4:00 PM EST.
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If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Georgia Epps can be reached at (571) 272-2328. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
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Hanway Chang
/HC/ Examiner, Art Unit 2878
/GEORGIA Y EPPS/ Supervisory Patent Examiner, Art Unit 2878
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