Prosecution Insights
Last updated: August 17, 2026
Application No. 18/782,783

SEMICONDUCTOR SUBSTRATE STAGE FOR CARRING SUBSTRATE

Non-Final OA §DP
Filed
Jul 24, 2024
Priority
Mar 05, 2021 — provisional 63/156,969 +2 more
Examiner
NGUYEN, HUNG
Art Unit
2882
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Taiwan Semiconductor Manufacturing Company, Ltd.
OA Round
1 (Non-Final)
91%
Grant Probability
Favorable
1-2
OA Rounds
1m
Est. Remaining
99%
With Interview

Examiner Intelligence

Grants 91% — above average
91%
Career Allowance Rate
1337 granted / 1473 resolved
+22.8% vs TC avg
Moderate +9% lift
Without
With
+8.9%
Interview Lift
resolved cases with interview
Fast prosecutor
2y 2m
Avg Prosecution
34 currently pending
Career history
1506
Total Applications
across all art units

Statute-Specific Performance

§101
2.3%
-37.7% vs TC avg
§103
40.3%
+0.3% vs TC avg
§102
31.7%
-8.3% vs TC avg
§112
15.2%
-24.8% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1473 resolved cases

Office Action

§DP
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election without traverse of group I (claims 1-7 and 21-33) in the reply filed on May 13, 2026 is acknowledged. Double Patenting The nonstatutory double patenting rejection is based on a judicially created doctrine grounded in public policy (a policy reflected in the statute) so as to prevent the unjustified or improper timewise extension of the “right to exclude” granted by a patent and to prevent possible harassment by multiple assignees. A nonstatutory double patenting rejection is appropriate where the conflicting claims are not identical, but at least one examined application claim is not patentably distinct from the reference claim(s) because the examined application claim is either anticipated by, or would have been obvious over, the reference claim(s). See, e.g., In re Berg, 140 F.3d 1428, 46 USPQ2d 1226 (Fed. Cir. 1998); In re Goodman, 11 F.3d 1046, 29 USPQ2d 2010 (Fed. Cir. 1993); In re Longi, 759 F.2d 887, 225 USPQ 645 (Fed. Cir. 1985); In re Van Ornum, 686 F.2d 937, 214 USPQ 761 (CCPA 1982); In re Vogel, 422 F.2d 438, 164 USPQ 619 (CCPA 1970); In re Thorington, 418 F.2d 528, 163 USPQ 644 (CCPA 1969). A timely filed terminal disclaimer in compliance with 37 CFR 1.321(c) or 1.321(d) may be used to overcome an actual or provisional rejection based on nonstatutory double patenting provided the reference application or patent either is shown to be commonly owned with the examined application, or claims an invention made as a result of activities undertaken within the scope of a joint research agreement. See MPEP § 717.02 for applications subject to examination under the first inventor to file provisions of the AIA as explained in MPEP § 2159. See MPEP § 2146 et seq. for applications not subject to examination under the first inventor to file provisions of the AIA . A terminal disclaimer must be signed in compliance with 37 CFR 1.321(b). The filing of a terminal disclaimer by itself is not a complete reply to a nonstatutory double patenting (NSDP) rejection. A complete reply requires that the terminal disclaimer be accompanied by a reply requesting reconsideration of the prior Office action. Even where the NSDP rejection is provisional the reply must be complete. See MPEP § 804, subsection I.B.1. For a reply to a non-final Office action, see 37 CFR 1.111(a). For a reply to final Office action, see 37 CFR 1.113(c). A request for reconsideration while not provided for in 37 CFR 1.113(c) may be filed after final for consideration. See MPEP §§ 706.07(e) and 714.13. The USPTO Internet website contains terminal disclaimer forms which may be used. Please visit www.uspto.gov/patent/patents-forms. The actual filing date of the application in which the form is filed determines what form (e.g., PTO/SB/25, PTO/SB/26, PTO/AIA /25, or PTO/AIA /26) should be used. A web-based eTerminal Disclaimer may be filled out completely online using web-screens. An eTerminal Disclaimer that meets all requirements is auto-processed and approved immediately upon submission. For more information about eTerminal Disclaimers, refer to www.uspto.gov/patents/apply/applying-online/eterminal-disclaimer. Claims 1-7 and 21-33 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims of U.S. Patent No.12,111,582 B2. Although the conflicting claims are not identical, they are not patentably distinct from each other because all of the features/limitations collectively recited in claims 1-7 and 21-23 of the instant application are also included, inter alia, in the collective recitation of claims 1-20 of the ‘582 patent. With respect to claim 1 of the present application, claims 1, 5, 8-10 and 15 of the’582 patent disclose: PNG media_image1.png 131 304 media_image1.png Greyscale PNG media_image2.png 35 299 media_image2.png Greyscale PNG media_image3.png 118 295 media_image3.png Greyscale PNG media_image4.png 160 322 media_image4.png Greyscale Thus, it is noted that the differences amount to no more than combining expressly claimed features of the same semiconductor substrate stage, rearranging the relative positions of the recited layers, and selecting known contacts, overlap, dimensional and storage-device relationships. Such modifications would have been obvious variations yielding no unexpected result and would not render the presently claimed subject matter patentably distinct from the patented claims. Also claims 21-26 of the present application over patent claims 1, 8, 12, 17 and 20. Claims 27-30 over patent claims 14-18. Claims 31-33 over patent claims 8-10. In fact, claims 1-7 and 21-33 are merely re-written versions/or broader versions of claims 1-20 of the '582 patent. Any inquiry concerning this communication or earlier communications from the examiner should be directed to HUNG HENRY NGUYEN whose telephone number is (571)272-2124. The examiner can normally be reached Monday-Friday 7:00AM-4:30PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Toan Minh Ton can be reached at 571-272-2303. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. HUNG HENRY NGUYEN Primary Examiner Art Unit 2882 Hvn 7/15/26 /HUNG V NGUYEN/ Primary Examiner, Art Unit 2882
Read full office action

Prosecution Timeline

Jul 24, 2024
Application Filed
Jul 17, 2026
Non-Final Rejection mailed — §DP (current)

Precedent Cases

Applications granted by this same examiner with similar technology

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PHOTOMASK AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
1y 10m to grant Granted Aug 04, 2026
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METHOD AND APPARATUS FOR CHARACTERIZATION OF A MICROLITHOGRAPHY MASK
2y 9m to grant Granted Jul 28, 2026
Patent 12693601
EXPOSURE APPARATUS, EXPOSURE METHOD, AND MANUFACTURING METHOD FOR ELECTRONIC DEVICE
2y 7m to grant Granted Jul 28, 2026
Patent 12695264
LASER APPARATUS AND ELECTRONIC DEVICE MANUFACTURING METHOD
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Patent 12681381
PELLICLE, EXPOSURE MASTER, EXPOSURE DEVICE, PELLICLE PRODUCTION METHOD AND TEST METHOD FOR MASK ADHESIVE LAYER
2y 0m to grant Granted Jul 14, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
91%
Grant Probability
99%
With Interview (+8.9%)
2y 2m (~1m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1473 resolved cases by this examiner. Grant probability derived from career allowance rate.

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