Prosecution Insights
Last updated: April 19, 2026
Application No. 18/789,140

MEMORY DEVICE HAVING A COMPARATOR CIRCUIT

Non-Final OA §DP
Filed
Jul 30, 2024
Examiner
ALROBAIE, KHAMDAN N
Art Unit
2824
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Taiwan Semiconductor Manufacturing Company Ltd.
OA Round
1 (Non-Final)
86%
Grant Probability
Favorable
1-2
OA Rounds
2y 3m
To Grant
89%
With Interview

Examiner Intelligence

Grants 86% — above average
86%
Career Allow Rate
545 granted / 635 resolved
+17.8% vs TC avg
Minimal +3% lift
Without
With
+2.8%
Interview Lift
resolved cases with interview
Typical timeline
2y 3m
Avg Prosecution
25 currently pending
Career history
660
Total Applications
across all art units

Statute-Specific Performance

§101
3.5%
-36.5% vs TC avg
§103
35.4%
-4.6% vs TC avg
§102
29.0%
-11.0% vs TC avg
§112
19.3%
-20.7% vs TC avg
Black line = Tech Center average estimate • Based on career data from 635 resolved cases

Office Action

§DP
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Information Disclosure Statement The information disclosure statement (IDS) submitted on 7/30/2024 is in compliance with the provisions of 37 CFR 1.97. Accordingly, the information disclosure statement is being considered by the examiner. Double Patenting The nonstatutory double patenting rejection is based on a judicially created doctrine grounded in public policy (a policy reflected in the statute) so as to prevent the unjustified or improper timewise extension of the “right to exclude” granted by a patent and to prevent possible harassment by multiple assignees. A nonstatutory double patenting rejection is appropriate where the conflicting claims are not identical, but at least one examined application claim is not patentably distinct from the reference claim(s) because the examined application claim is either anticipated by, or would have been obvious over, the reference claim(s). See, e.g., In re Berg, 140 F.3d 1428, 46 USPQ2d 1226 (Fed. Cir. 1998); In re Goodman, 11 F.3d 1046, 29 USPQ2d 2010 (Fed. Cir. 1993); In re Longi, 759 F.2d 887, 225 USPQ 645 (Fed. Cir. 1985); In re Van Ornum, 686 F.2d 937, 214 USPQ 761 (CCPA 1982); In re Vogel, 422 F.2d 438, 164 USPQ 619 (CCPA 1970); In re Thorington, 418 F.2d 528, 163 USPQ 644 (CCPA 1969). A timely filed terminal disclaimer in compliance with 37 CFR 1.321(c) or 1.321(d) may be used to overcome an actual or provisional rejection based on nonstatutory double patenting provided the reference application or patent either is shown to be commonly owned with the examined application, or claims an invention made as a result of activities undertaken within the scope of a joint research agreement. See MPEP § 717.02 for applications subject to examination under the first inventor to file provisions of the AIA as explained in MPEP § 2159. See MPEP § 2146 et seq. for applications not subject to examination under the first inventor to file provisions of the AIA . A terminal disclaimer must be signed in compliance with 37 CFR 1.321(b). The filing of a terminal disclaimer by itself is not a complete reply to a nonstatutory double patenting (NSDP) rejection. A complete reply requires that the terminal disclaimer be accompanied by a reply requesting reconsideration of the prior Office action. Even where the NSDP rejection is provisional the reply must be complete. See MPEP § 804, subsection I.B.1. For a reply to a non-final Office action, see 37 CFR 1.111(a). For a reply to final Office action, see 37 CFR 1.113(c). A request for reconsideration while not provided for in 37 CFR 1.113(c) may be filed after final for consideration. See MPEP §§ 706.07(e) and 714.13. The USPTO Internet website contains terminal disclaimer forms which may be used. Please visit www.uspto.gov/patent/patents-forms. The actual filing date of the application in which the form is filed determines what form (e.g., PTO/SB/25, PTO/SB/26, PTO/AIA /25, or PTO/AIA /26) should be used. A web-based eTerminal Disclaimer may be filled out completely online using web-screens. An eTerminal Disclaimer that meets all requirements is auto-processed and approved immediately upon submission. For more information about eTerminal Disclaimers, refer to www.uspto.gov/patents/apply/applying-online/eterminal-disclaimer. Claims 1-20 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1-20 of U.S. Patent No. 11,398,271. Although the claims at issue are not identical, they are not patentably distinct from each other because the current application claims similar features as the issued patent. In other words, the current invention is broader than the issued patent. The current application recites similar limitations as the issued patent such as a memory array comprising one or more rows of memory cells and one or more columns of memory cells, a comparator circuitry operably connected to a respective column of memory cells in the one or more columns of memory cells, wherein the comparator circuit is configured to: generate a first precompute signal and a second precompute, wherein the comparator circuit being configured to generate the first precompute signal and the second precompute signal comprises the comparator circuit being configured to generate the first precompute signal and the second precompute signal from a previous memory output signal and a Compare input and Control (CIC) signal before a cell data signal; receive the cell data signal from a memory cell in a respective column of memory cells; and select, based on the cell data signal, one of the first precompute signal and the second precompute signal to output from the comparator circuitry as a memory output signal for the memory array. Claims 1-20 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1-20 of U.S. Patent No. 12,136,454 B2. Although the claims at issue are not identical, they are not patentably distinct from each other because the current application claims similar features as the issued patent. In other words, the current invention is broader than the issued patent. The current application recites similar limitations as the issued patent such as a memory array comprising one or more rows of memory cells and one or more columns of memory cells, a comparator circuitry operably connected to a respective column of memory cells in the one or more columns of memory cells, wherein the comparator circuit is configured to: generate a first precompute signal and a second precompute, wherein the comparator circuit being configured to generate the first precompute signal and the second precompute signal comprises the comparator circuit being configured to generate the first precompute signal and the second precompute signal from a previous memory output signal and a Compare input and Control (CIC) signal before a cell data signal; receive the cell data signal from a memory cell in a respective column of memory cells; and select, based on the cell data signal, one of the first precompute signal and the second precompute signal to output from the comparator circuitry as a memory output signal for the memory array. Allowable Subject Matter Currently, the claims are rejected under double patenting rejections. The claims will be allowed if the double patenting rejections above are overcame. The following is an examiner’s statement of reasons for allowance: After further search and consideration it is determined that the prior art of record neither anticipated nor renders obvious the claimed subject matter of the instant application as a whole either taken alone or in combination, in particular, prior art of record does not teach, the following limitation(s) in combination with the remaining claimed limitation: With regards to claim 1, generate a first precompute signal and a second precompute, wherein the comparator circuit being configured to generate the first precompute signal and the second precompute signal comprises the comparator circuit being configured to generate the first precompute signal and the second precompute signal from a previous memory output signal and a Compare input and Control (CIC) signal before a cell data signal; receive the cell data signal from a memory cell in a respective column of memory cells; and select, based on the cell data signal, one of the first precompute signal and the second precompute signal to output from the comparator circuitry as a memory output signal for the memory array. With regards to claim 10, selecting, based on the cell data signal, one of a first precompute signal or a second precompute signal as a first signal read from the first memory cell; determining that a second memory cell is to be read; receiving, in response to determining that the second memory cell is to be read, a second cell data signal from the second memory cell; and selecting, based the second cell data signal, one of the first precompute signal and the second precompute signal as a second signal read from the second memory cell. With regards to claim 15, generate a first precompute signal and a second precompute signal, wherein the precompute circuit being configured to generate the first precompute signal and the second precompute signal comprises the precompute circuit being configured to produce the first precompute signal and the second precompute signal from a previous memory output signal and a compare input and control (CIC) signal before a cell data signal; and a select circuit operably connected to the precompute circuit, wherein the select circuit is configured to: receive an inverted cell data signal from a memory cell of the memory device; and select, based on the inverted cell data signal, one of the first precompute signal and the second precompute signal to output as a memory output signal for the memory cell. Any comments considered necessary by applicant must be submitted no later than the payment of the issue fee and, to avoid processing delays, should preferably accompany the issue fee. Such submissions should be clearly labeled “Comments on Statement of Reasons for Allowance.” Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to KHAMDAN N ALROBAIE whose telephone number is (571)270-7099. The examiner can normally be reached Monday to Thursday (8AM till 6PM). Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Richard Elms can be reached at (571) 272-1869. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /Khamdan N. Alrobaie/Primary Examiner, Art Unit 2824
Read full office action

Prosecution Timeline

Jul 30, 2024
Application Filed
Feb 07, 2026
Non-Final Rejection — §DP (current)

Precedent Cases

Applications granted by this same examiner with similar technology

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SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENTIAL THRESHOLD VOLTAGES
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RESISTIVE RANDOM ACCESS MEMORY AND MEMORY MINI-ARRAY THEREOF WITH IMPROVED RELIABILITY
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2y 5m to grant Granted Mar 24, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
86%
Grant Probability
89%
With Interview (+2.8%)
2y 3m
Median Time to Grant
Low
PTA Risk
Based on 635 resolved cases by this examiner. Grant probability derived from career allow rate.

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