Tech Center 2800 • Art Units: 2824
This examiner grants 86% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18664549 | INTEGRATED CIRCUIT INCLUDING TERNARY CONTENT ADDRESSABLE MEMORY CELL | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18654527 | SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM HAVING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18698617 | NEURAL NETWORK CIRCUIT AND NEURAL NETWORK CIRCUIT CONTROL METHOD | Non-Final OA | MAXELL, LTD. |
| 18367902 | Power-Gate Structure | Non-Final OA | Arm Limited |
| 18789140 | MEMORY DEVICE HAVING A COMPARATOR CIRCUIT | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18764340 | MEMORY DEVICE, MEMORY ARRAY, AND N-BIT MEMORY UNIT | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18490922 | SEMICONDUCTOR MEMORY DEVICES WITH FLYING BIT LINES AND METHODS OF MANUFACTURING THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18503479 | METHOD AND DEVICE FOR OPERATING A MEMORY DEVICE | Final Rejection | Robert Bosch GmbH |
| 18494463 | Negative Pull-Down Voltage in a Sense Amplifier | Final Rejection | Micron Technology, Inc. |
| 18373490 | WORD LINE DRIVERS FOR MEMORY DEVICES | Non-Final OA | Micron Technology, Inc. |
| 18310736 | Self-Selecting Memory Cells Configured to Store More Than One Bit per Memory Cell | Final Rejection | Micron Technology, Inc. |
| 18829771 | SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | Kioxia Corporation |
| 18734655 | Methods and Circuits for Power Management of a Memory Module | Non-Final OA | Rambus Inc. |
| 18772274 | Dynamic Adjustment of Word Line Timing in Static Dynamic Random Access Memory | Non-Final OA | Ceremorphic, Inc. |
| 18631228 | READ/WRITE SWITCHING CIRCUIT AND MEMORY | Final Rejection | CHANGXIN MEMORY TECHNOLOGIES, INC. |
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