Prosecution Insights
Last updated: May 29, 2026
Application No. 18/844,478

SETUP AND CONTROL METHODS FOR A LITHOGRAPHIC PROCESS AND ASSOCIATED APPARATUSES

Non-Final OA §102
Filed
Sep 06, 2024
Priority
Mar 22, 2022 — EU 22163435.5 +1 more
Examiner
ASFAW, MESFIN T
Art Unit
2882
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
ASML Netherlands B.V.
OA Round
1 (Non-Final)
83%
Grant Probability
Favorable
1-2
OA Rounds
11m
Est. Remaining
97%
With Interview

Examiner Intelligence

Grants 83% — above average
83%
Career Allowance Rate
801 granted / 969 resolved
+14.7% vs TC avg
Moderate +14% lift
Without
With
+14.2%
Interview Lift
resolved cases with interview
Typical timeline
2y 8m
Avg Prosecution
23 currently pending
Career history
997
Total Applications
across all art units

Statute-Specific Performance

§101
0.2%
-39.8% vs TC avg
§103
78.3%
+38.3% vs TC avg
§102
16.5%
-23.5% vs TC avg
§112
0.2%
-39.8% vs TC avg
Black line = Tech Center average estimate • Based on career data from 969 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . The preliminary amendment filed on September 06, 2024 has been entered. Claims 1-4, 6-15 and 18-23 are pending in this application. Claim Rejections - 35 USC § 102 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1-4, 6-15 and 18-23 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Frisco et al. [US 20200272059 A1, hereafter Frisco]. As per Claims 1 and 18, Frisco teaches a method for performing a lithographic apparatus setup calibration and/or drift correction for a specific lithographic apparatus of a population of lithographic apparatuses to be used in a manufacturing process for manufacturing an integrated circuit extending across a plurality of layers on a substrate (Para 7), the method comprising: determining a spatial error distribution of an apparatus parameter across spatial coordinates on the substrate for each lithographic apparatus of the population of lithographic apparatuses and/or each layer of the plurality of layers (wherein a method comprising determining aberrations caused by each lithographic apparatus of a set of lithographic apparatuses); determining a reference distribution by aggregating each of the spatial error distributions to optimize the reference distribution such that a spatial distribution of a parameter of interest of the manufacturing process is co-optimized across the said population of lithographic apparatuses and/or plurality of layers, wherein the aggregating comprises performing a weighted average of the spatial error distributions (Para 21, wherein the aberrations may be measured by exposing reference substrates to patterns using the lithographic apparatuses and then measuring the exposed patterns); and using the reference distribution as a target distribution for the apparatus parameter for each lithographic apparatus and/or layer (Para 35, wherein calculate adjustments of the lithographic apparatuses which minimize differences between the aberrations caused by each of the lithographic apparatuses, and applying the adjustments to the lithographic apparatuses). As per Claims 2 and 19, Frisco teaches the method as claimed in claim 1, wherein the reference distribution is common for all lithographic apparatuses and/or layers (Para 21, measured by exposing reference substrates). As per Claims 3 and 20, Frisco teaches the method as claimed in claim 1, wherein the reference distribution is optimized to minimize an error range of the apparatus parameter across the lithographic apparatus population and/or the plurality of layers (Para 85). As per Claims 4 and 21, Frisco teaches the method as claimed in claim 1, wherein the spatial error distribution for each lithographic apparatus or layer used to determine the reference distribution comprises a residual error fingerprint following an initial or simulated setup procedure (Para 66, the projection system of the lithographic apparatus may be adjusted to reduce such aberrations but nevertheless residual aberrations will remain). As per Claims 6 and 22, Frisco teaches the method as claimed in claim 1, wherein the optimization of the reference distribution comprises determining weights per lithographic apparatus and/or layer for the weighted average, the weights being determined to optimize the parameter of interest of the manufacturing process (Para 87, the best set of weighted parameters to achieve the best matching of KPIs across the set of lithographic apparatuses). As per Claim 7, Frisco teaches the method as claimed in claim 6, wherein the determining a reference distribution comprises performing an iterative optimization of the weights till at least one convergence criterion is met (Para 98). As per Claim 8, Frisco teaches the method as claimed in claim 6, wherein the aggregating comprises determining a mapping function which maps the spatial error distributions weighted by respective weights to the weighted average of the spatial error distributions (Para 83). As per Claims 9 and 23, Frisco teaches the method as claimed in claim 1, wherein the parameter of interest is overlay, edge placement error or any parameter indicative of yield (Para 36). As per Claim 10, Frisco teaches the method as claimed in claim 1, wherein the determining a reference distribution accounts for at least one sensitivity or weight specific to a particular application related to one or more of the lithographic apparatuses and/or layers and/or the integrated circuit (Para 45). As per Claim 11, Frisco teaches the method as claimed in claim 1, wherein the reference distribution is used as a target distribution for each lithographic apparatus and/or layer during a setup or calibration operation prior to commencing production (Para 87). As per Claim 12, Frisco teaches the method as claimed in claim 1, wherein the reference distribution is used as a target distribution for drift control during production, such that any drift is corrected towards the target distribution (Para 87). As per Claim 13, Frisco teaches the method as claimed in claim 1, wherein the apparatus parameter is aberration of a projection system of a lithographic apparatus, and the setup comprises a lens setup for calibrating the projection system (Para 66). As per Claim 14, Frisco teaches the method as claimed in claim 13, wherein the determining a reference distribution further comprises an optimization of aberration or Zernike weights in a lens model used in the lens setup (Para 67). As per Claim 15, Frisco teaches the method as claimed in claim 1, wherein the apparatus parameter is position deviation in one or both of a reticle stage and substrate stage of the lithographic apparatus and the setup comprises a grid setup for calibrating a measure and/or exposure grid (Para 35). Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to MESFIN ASFAW whose telephone number is (571)270-5247. The examiner can normally be reached Monday - Friday 8 am - 4 pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Toan Ton can be reached at 571-272-2303. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /MESFIN T ASFAW/ Primary Examiner, Art Unit 2882
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Prosecution Timeline

Sep 06, 2024
Application Filed
Mar 27, 2026
Non-Final Rejection mailed — §102 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

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IMMERSION LITHOGRAPHIC SYSTEM
2y 11m to grant Granted May 19, 2026
Patent 12631976
METHOD OF REDUCING CYCLIC ERROR EFFECTS IN A LITHOGRAPHIC PROCESS, PROJECTION SYSTEM AND LITHOGRAPHIC APPARATUS COMPRISING A PROJECTION SYSTEM
1y 11m to grant Granted May 19, 2026
Patent 12625435
RETICLE STORAGE CABINET SYSTEM AND METHOD USING THE SAME
2y 5m to grant Granted May 12, 2026
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4y 0m to grant Granted May 05, 2026
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2y 4m to grant Granted Apr 14, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
83%
Grant Probability
97%
With Interview (+14.2%)
2y 8m (~11m remaining)
Median Time to Grant
Low
PTA Risk
Based on 969 resolved cases by this examiner. Grant probability derived from career allowance rate.

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