Prosecution Insights
Last updated: August 16, 2026
Application No. 18/869,501

3D MEMORY DEVICE WITH LOCAL COLUMN DECODING

Non-Final OA §112
Filed
Nov 26, 2024
Priority
Jun 02, 2022 — provisional 63/348,087 +1 more
Examiner
RADKE, JAY W
Art Unit
Tech Center
Assignee
Rambus Inc.
OA Round
1 (Non-Final)
86%
Grant Probability
Favorable
1-2
OA Rounds
4m
Est. Remaining
94%
With Interview

Examiner Intelligence

Grants 86% — above average
86%
Career Allowance Rate
724 granted / 844 resolved
+25.8% vs TC avg
Moderate +9% lift
Without
With
+8.6%
Interview Lift
resolved cases with interview
Fast prosecutor
2y 0m
Avg Prosecution
19 currently pending
Career history
865
Total Applications
across all art units

Statute-Specific Performance

§101
1.2%
-38.8% vs TC avg
§103
41.4%
+1.4% vs TC avg
§102
23.8%
-16.2% vs TC avg
§112
25.7%
-14.3% vs TC avg
Black line = Tech Center average estimate • Based on career data from 844 resolved cases

Office Action

§112
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Objections Claim 4 is objected to because of the following informalities: Regarding claim 4: Examiner believes that Applicants intentions are to specify the one or more column select lines that are to be selected. Hence, Examiner suggests amending the claims as follows: Claim 4: The 3D memory device of claim 1, further comprising: one or more column address buses to provide a column address to the column address decoder specifying the one or more of the plurality of column select lines to be the selected column select lines; and wherein the two or more global data signal buses and the one or more column address buses are shared between a column of mats in a block of the 3D memory device. Appropriate correction is required. Claim Rejections - 35 USC § 112 The following is a quotation of the first paragraph of 35 U.S.C. 112(a): (a) IN GENERAL.—The specification shall contain a written description of the invention, and of the manner and process of making and using it, in such full, clear, concise, and exact terms as to enable any person skilled in the art to which it pertains, or with which it is most nearly connected, to make and use the same, and shall set forth the best mode contemplated by the inventor or joint inventor of carrying out the invention. The following is a quotation of the first paragraph of pre-AIA 35 U.S.C. 112: The specification shall contain a written description of the invention, and of the manner and process of making and using it, in such full, clear, concise, and exact terms as to enable any person skilled in the art to which it pertains, or with which it is most nearly connected, to make and use the same, and shall set forth the best mode contemplated by the inventor of carrying out his invention. Claims 1-20 are rejected under 35 U.S.C. 112(a) or 35 U.S.C. 112 (pre-AIA ), first paragraph, as failing to comply with the written description requirement. The claim(s) contains subject matter which was not described in the specification in such a way as to reasonably convey to one skilled in the relevant art that the inventor or a joint inventor, or for applications subject to pre-AIA 35 U.S.C. 112, the inventor(s), at the time the application was filed, had possession of the claimed invention. Regarding claim 1: Because the claim states “a plurality of column select lines to select a column of memory cells of a memory cell array” then one of ordinary skill in the art expects the column select lines to select a column within the memory cell array from among the columns of the memory cell array BUT the term “column select lines” was used in a different sense within the disclosure, wherein column select lines are not disclosed to select a column of memory cells within a memory cell array but rather are disclosed to select one or more sense amplifiers (see [0029]), wherein each sese amplifier corresponds to a memory cell array that it is under (see FIG. 2B), such that values of memory cells along an active word line in each memory cell array corresponding to the one or more selected sense amplifiers are read out in a read operation. Hence, the term column in Applicant’s term “column select lines” (see 504 in FIG. 5) seems to be NOT directed to a column of memory cells within a memory cell array but rather a column within an array of mats (see FIG. 3). Hence, the claim comprises subject matter that was not described in the specification in such a way as to reasonably convey to one skilled in the relevant art that the inventor or a joint inventor, or for applications subject to pre-AIA 35 U.S.C. 112, the inventor(s), at the time the application was filed, had possession of the claimed invention. One way to fix the claim is to amend the claim as follows: Claim 1: A 3D memory device comprising: a plurality of mats, each mat of the plurality of mats including a memory cell array; logic circuitry disposed under the memory cell array in each mat, the logic circuitry including: a plurality of column select lines to select a sense amplifier a corresponding mat; a local data signal bus to communicate data to and from the memory cell array of the corresponding mat; two or more global data signal buses to communicate data externally to and from the corresponding mat; a column address decoder to select one or more of the plurality of column select lines as one or more selected column select lines of the corresponding mat; and at least one selectable global array data bus redriver including a data bus selector circuit controllable by a select signal to select one of the two or more global data signal buses as selected global data signal bus for coupling to the local data signal bus, and a set of amplifiers to amplify data signals communicated between the selected global data signal bus and the local data signal bus. Claims 2-16 depend on claim 1. Regarding claim 17: This claim is rejected for reasons similar to those given above in regards to claims 1. Claim 18 depends on claim 17. Regarding claim 19: This claim is rejected for reasons similar to those given above in regards to claims 1. Claim 20 depends on claim 19. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to JAY W RADKE whose telephone number is (571)270-1622. The examiner can normally be reached M-F 9-6 EST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Amir Zarabian can be reached at 272-1852. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. JAY W. RADKE Primary Examiner Art Unit 2827 /JAY W. RADKE/Primary Examiner, Art Unit 2827
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Prosecution Timeline

Nov 26, 2024
Application Filed
Jul 15, 2026
Non-Final Rejection mailed — §112 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12700447
SEMICONDUCTOR MEMORY DEVICES HAVING ENHANCED SUB-WORD LINE DRIVERS THEREIN
2y 8m to grant Granted Aug 04, 2026
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METHOD, DEVICE, AND CIRCUIT FOR HIGH-SPEED MEMORIES
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Patent 12694920
MEMORY DEVICES, MEMORY SYSTEMS HAVING THE SAME AND OPERATING METHODS THEREOF
3y 3m to grant Granted Jul 28, 2026
Patent 12694918
MAGNETIC MEMORY DEVICE
1y 10m to grant Granted Jul 28, 2026
Patent 12688883
MEMORY DEVICE AND MEMORY MODULE INCLUDING THE SAME
1y 10m to grant Granted Jul 21, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
86%
Grant Probability
94%
With Interview (+8.6%)
2y 0m (~4m remaining)
Median Time to Grant
Low
PTA Risk
Based on 844 resolved cases by this examiner. Grant probability derived from career allowance rate.

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