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-2.6% interview lift. Interview already conducted in this application's prosecution history. This examiner has a 94% grant rate with -2.6% interview lift. Since an interview has already been tried, recommend written response with narrowed claims based on precedent claim evolution patterns.
BIT LINE VOLTAGE CLAMPING READ CIRCUIT FOR AN IN-MEMORY COMPUTE OPERATION WHERE SIMULTANEOUS ACCESS IS MADE TO PLURAL ROWS OF A STATIC RANDOM ACCESS MEMORY (SRAM)