Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
DETAILED ACTION
Claims 1-20 are pending in this application.
Specification
Applicant is reminded of the proper content of an abstract of the disclosure.
A patent abstract is a concise statement of the technical disclosure of the patent and should include that which is new in the art to which the invention pertains. The abstract should not refer to purported merits or speculative applications of the invention and should not compare the invention with the prior art.
If the patent is of a basic nature, the entire technical disclosure may be new in the art, and the abstract should be directed to the entire disclosure. If the patent is in the nature of an improvement in an old apparatus, process, product, or composition, the abstract should include the technical disclosure of the improvement. The abstract should also mention by way of example any preferred modifications or alternatives.
Where applicable, the abstract should include the following: (1) if a machine or apparatus, its organization and operation; (2) if an article, its method of making; (3) if a chemical compound, its identity and use; (4) if a mixture, its ingredients; (5) if a process, the steps.
Extensive mechanical and design details of an apparatus should not be included in the abstract. The abstract should be in narrative form and generally limited to a single paragraph within the range of 50 to 150 words in length.
See MPEP § 608.01(b) for guidelines for the preparation of patent abstracts.
It is noted that the claimed invention is directed to a method. The examiner suggests amending the abstract to reflect same.
Claim Rejections - 35 USC § 112
The following is a quotation of 35 U.S.C. 112(b):
(b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention.
The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph:
The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention.
Claims 2, 11, 18 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention.
In claim 2, the limitation of “wherein the aluminum oxide is selectively formed on the first surface of the substrate relative to the second different surface of the substrate” is deemed not further limiting as said limitation is completely recited in the preamble of independent claim 1, from which claim 2 depends.
In claim 11 line 2, the term “native oxide” is confusing as to whether this qualifies as a precursor comprising oxygen.
In claim 11 line 2, the term “exposure to” is confusing as to whether this is a precursor comprising oxygen. The examiner suggests its deletion.
In claim 18, some of the elements are redundant and thus, confusing. For example, if x=0, then SiOxN (line 2) is the same as SiN (line 1). Appropriate amendments are requested.
Allowable Subject Matter
Claims 1-20 are allowed.
It is well known to selectively deposit aluminum nitride as noted in JP 2011-79698. It is also well known to selectively deposit aluminum nitride on a first surface of a substrate opposite a second dielectric surface on the same substrate as noted in Wang et al. (TW 201718923A).
With respect to oxidation, it is well known to oxide an aluminum nitride substrate to form an oxide layer as noted in JP 2008-34555. It is also well known to selectively oxidize a portion of the aluminum nitride layer as noted in Inumiya (2018/0069112).
With respect to etching, it is well known to oxidize an aluminum nitride film by removing an oxidant by etching with a cleaning gas as noted in Sakai et al. (2011/0059600). Specifically, it is well known to etch an aluminum nitride material using a fluoride source such as HF as noted in JP 2021-528867.
Lastly, it is well known to selectively deposit an etch stop materials such as aluminum oxide or aluminum nitride by atomic layer deposition and subsequently oxidize an aluminum nitride surface to form an oxidized layer of aluminum as noted in Lin (2023/0038952). However, the prior art references fail to teach or suggest the claimed etching step in the formation of the selective deposition of aluminum oxide with the oxidation step.
Any inquiry concerning this communication or earlier communications from the examiner should be directed to BRET CHEN whose telephone number is (571)272-1417. The examiner can normally be reached M-F 8:30-8:30 MT.
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/BRET P CHEN/Primary Examiner, Art Unit 1715 12/27/2025