Prosecution Insights
Prosecution Insights
Tech Center 3700 • Art Units: 1715 1718 1784 1789 1792 1795 2818 2837 2899 3774
This examiner grants 84% of resolved cases
Bret P. Chen, an examiner in Tech Center 3700 and Art Unit 1715, has a high volume of 1154 resolved cases. The allowance rate is 84.5%, which is very favorable for applicants. The median days to allowance is 960, showing an efficient process for those who receive a grant. This 960-day timeline is a standard expectation for successful prosecution in Art Unit 1715. The 84.5% rate suggests a high probability of success for well-prepared applications.
The data indicates an interview lift of 16.4%. This lift shows that interviews are a productive way to increase the already high 84.5% allowance rate. In Tech Center 3700, the 960-day median pendency suggests that cases move relatively quickly compared to other units. With 1154 cases of experience, the examiner's 84.5% rate is a well-established benchmark. Practitioners should view the 16.4% interview lift as a useful tool for resolving any remaining issues.
The 960-day median to allowance is a positive sign for applicants seeking timely grants. Overall, the 1154 resolved cases suggest a predictable and high-allowance environment. The 16.4% interview lift can be used to further improve the 84.5% baseline. Practitioners in Art Unit 1715 should feel confident in the efficiency of this examiner's process.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 19021901 | METHOD FOR SELECTIVE DEPOSITION OF METAL LAYER | Non-Final OA | University-Industry Cooperation Group Of Kyung Hee University |
| 18628243 | ENVIRONMENTAL BARRIER COATINGS | Non-Final OA | RTX CORPORATION |
| 18876553 | METHODS OF FORMING STABLE CONDUCTIVE SURFACES | Non-Final OA | NORTHWESTERN UNIVERSITY |
| 18837560 | LOW RESISTANCE MOLYBDENUM DEPOSITION FOR LOGIC SOURCE/DRAIN CONTACTS | Non-Final OA | Lam Research Corporation |
| 19228490 | METHOD FOR DEPOSITING TARGET MATERIAL IN DEPOSITION CHAMBER WITH TILTABLE WORKPIECE HOLDER | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18979741 | Patterned DLC Coating for High Temperature Electrostatic Chucks | Non-Final OA | Applied Materials, Inc. |
| 18790596 | POST-GAP FILL TREATMENT FOR SEAM REDUCTION | Non-Final OA | Applied Materials, Inc. |
| 18666435 | RF PULSING ASSISTED LOW-K MATERIAL DEPOSITION WITH HIGH DENSITY | Non-Final OA | Applied Materials, Inc. |
| 18541263 | METHODS OF DEPOSITING SILICON-CONTAINING DIELECTRIC LAYERS FOR SEMICONDUCTOR DEVICES | Non-Final OA | National University of Singapore |
| 19210017 | FILM FORMING METHOD AND PLASMA PROCESSING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 19086798 | PROCESSING APPARATUS, PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM | Non-Final OA | Kokusai Electric Corporation |
| 18436231 | METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM | Non-Final OA | Kokusai Electric Corporation |
| 18083236 | HYBRID CHEMICAL AND PHYSICAL VAPOR DEPOSITION OF TRANSITION-METAL-ALLOYED PIEZOELECTRIC SEMICONDUCTOR FILMS | Non-Final OA | UNIVERSITY OF HOUSTON SYSTEM |
| 18956483 | ARTIFICIAL TURF TREATMENT SYSTEM AND METHOD | Non-Final OA | Tarkett Sports Canada Inc. |
| 18142147 | METHOD FOR DEPOSITING A RUTHENIUM-CONTAINING FILM ON A SUBSTRATE BY A CYCLICAL DEPOSITION PROCESS | Non-Final OA | Universiteit Gent |
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