Prosecution Insights
Last updated: October 01, 2026
Application No. 18/944,317

METHOD FOR FABRICATING PHOTOMASK AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH DAMASCENE STRUCTURE

Final Rejection §112
Filed
Nov 12, 2024
Priority
Mar 18, 2022 — divisional of 17/698,585
Examiner
ONUTA, TIBERIU DAN
Art Unit
2814
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
NANYA TECHNOLOGY Corporation
OA Round
2 (Final)
77%
Grant Probability
Favorable
3-4
OA Rounds
1y 6m
Est. Remaining
99%
With Interview

Examiner Intelligence

Grants 77% — above average
77%
Career Allowance Rate
72 granted / 93 resolved
+9.4% vs TC avg
Strong +24% interview lift
Without
With
+23.6%
Interview Lift
resolved cases with interview
Typical timeline
3y 4m
Avg Prosecution
39 currently pending
Career history
125
Total Applications
across all art units

Statute-Specific Performance

§103
65.3%
+25.3% vs TC avg
§102
21.9%
-18.1% vs TC avg
§112
11.3%
-28.7% vs TC avg
Black line = Tech Center average estimate • Based on career data from 93 resolved cases

Office Action

§112
DETAILED ACTION This Office action responds to Applicant’s amendments filed on 05/21/2026. Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . In the event the determination of the status of the application as subject to AIA 35 is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for a rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. Amendment Status The present Office action is made with all previously suggested amendments being fully considered. Accordingly, pending in this Office action are claims 1-12. Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION. —The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. Claim 1 is rejected under 35 U.S.C. 112(b) as being indefinite. The claim is indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint regard as the invention. Claim 1 (and any dependent claims 2-12) recites the limitation "wherein the second mask layer is in contact with the top surface of the translucent layer and the top surface of the opaque layer, wherein the first mask layer has a pattern of a second mask opening”. It is clear that “the first mask layer” from this limitation should be replaced with “the second mask layer”. For the purposes of examination to apply prior art, this was treated as "wherein the second mask layer is in contact with the top surface of the translucent layer and the top surface of the opaque layer, wherein the second mask layer has a pattern of a second mask opening”. Allowable Subject Matter Claims 1-12 are allowable. The following is an examiner’s statement of reasons for allowance: The prior art of record neither anticipates nor renders obvious a method for fabricating a photomask comprising a method step of forming a second mask layer on the top surface of the translucent layer and the top surface of the opaque layer by the photolithography process, wherein the second mask layer is in contact with the top surface of the translucent layer and the top surface of the opaque layer, as it is recited in claim 1. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Miyoshi (c), Yen (US 2013/0178068), Terasaki (US 2007/0128850), and Lee (US 2006/0014381) show methods for fabricating a photomask similar to the one from the instant invention. For example, the references of Miyoshi, Yen, Terasaki, and Lee as cited here and relied upon neither anticipate nor render obvious a method for fabricating a photomask comprising a method step of forming a second mask layer on the top surface of the translucent layer and the top surface of the opaque layer by the photolithography process, wherein the second mask layer is in contact with the top surface of the translucent layer and the top surface of the opaque layer, as it is recited in claim 1. Conclusion This action is made final. Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire three months from the mailing date of this action. In the event a first reply is filed within two months of the mailing date of this final action and the advisory action is not mailed until after the end of the three-month shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any extension fee pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than six months from the date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to TIBERIU DAN ONUTA whose telephone number is (571) 270-0074 and between the hours of 9:00 AM to 5:00 PM (Eastern Standard Time) Monday through Friday or by e-mail via Tiberiu.Onuta@uspto.gov. If attempts to reach the examiner by telephone or email are unsuccessful, the examiner's supervisor, Wael Fahmy, can be reached on (571) 272-1705. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (in USA or Canada) or 571-272-1000. /TIBERIU DAN ONUTA/Examiner, Art Unit 2814 /WAEL M FAHMY/Supervisory Patent Examiner, Art Unit 2814
Read full office action

Prosecution Timeline

Nov 12, 2024
Application Filed
Apr 24, 2026
Non-Final Rejection mailed — §112
May 21, 2026
Response Filed
Aug 17, 2026
Final Rejection mailed — §112 (current)

Precedent Cases

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Patent 12740481
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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
77%
Grant Probability
99%
With Interview (+23.6%)
3y 4m (~1y 6m remaining)
Median Time to Grant
Moderate
PTA Risk
Based on 93 resolved cases by this examiner. Grant probability derived from career allowance rate.

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