Prosecution Insights
Last updated: October 01, 2026
Application No. 19/038,241

NOVEL DYNAMIC INHIBIT VOLTAGE TO REDUCE WRITE POWER FOR RANDOM-ACCESS MEMORY

Non-Final OA §102
Filed
Jan 27, 2025
Priority
Feb 11, 2021 — provisional 63/148,419 +2 more
Examiner
ALROBAIE, KHAMDAN N
Art Unit
Tech Center
Assignee
Taiwan Semiconductor Manufacturing Company, Ltd.
OA Round
1 (Non-Final)
86%
Grant Probability
Favorable
1-2
OA Rounds
6m
Est. Remaining
89%
With Interview

Examiner Intelligence

Grants 86% — above average
86%
Career Allowance Rate
572 granted / 662 resolved
+26.4% vs TC avg
Minimal +3% lift
Without
With
+2.6%
Interview Lift
resolved cases with interview
Typical timeline
2y 2m
Avg Prosecution
23 currently pending
Career history
684
Total Applications
across all art units

Statute-Specific Performance

§101
4.1%
-35.9% vs TC avg
§103
38.2%
-1.8% vs TC avg
§102
27.8%
-12.2% vs TC avg
§112
18.3%
-21.7% vs TC avg
Black line = Tech Center average estimate • Based on career data from 662 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Information Disclosure Statement The information disclosure statement (IDS) submitted on 01/27/2025, 01/08/2026 and 05/29/2026 are in compliance with the provisions of 37 CFR 1.97. Accordingly, the information disclosure statement is being considered by the examiner. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1-3 and is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Kang et al. (US 2013/0148405 A1). Regarding claim 1, Kang teaches a method for operating a memory device, comprising: receiving, through a word line coupled to a subset of memory cells, a word line voltage (Fig. 1 and Fig. 4, selected word line receives voltage Vs); and receiving, through a bit line and a select line of unselected memory cells of the subset of memory cells, an inhibit voltage (bit line BL and select line SL for the unselected memory cells receive inhibit voltage Vw2); wherein the inhibit voltage is a fixed delta off set from the word line voltage (the delta off set between word line voltage Vs and inhibit voltage Vw2 is fixed). Regarding claim 2, Kang further teaches the method of claim 1, further comprising: receiving, at a first time and through a bit line of a selected memory cell of the subset of memory cells, a bit line voltage (Fig. 3, selected bit line receives Vw1); receiving, at the first time and through a select line of the selected memory cell of the subset of memory cells, a reference voltage (Fig. 2, select line for the selected memory cell receive reference voltage Vw2); and receiving, at a second time and through the bit line and select line of the selected memory cell, a first voltage that is a predetermined fraction of the bit line voltage (Fig. 5). Regarding claim 3, Kang further teaches the method of claim 1, further comprising receiving, at a third time and through the bit line and select line of the selected memory cell, the inhibit voltage (Fig. 5). Regarding claim 9, Kang further teaches the method of claim 1, further comprising receiving, for the unselected memory cells, the inhibit voltage further through respective switches (Fig. 2, Y-decoder 130 comprises respective switches for selecting the bit lines). Regarding claim 10, Kang further teaches the method of claim 9, wherein the switches are coupled to the bit line and the select line of the unselected memory cells, respectively (Fig. 2, Y-decoder 130 comprises respective switches for selecting the bit lines, which are directly coupled to the bit lines and indirectly coupled to the select lines). Allowable Subject Matter Claims 11-20 are allowed. Claims 4-8 are objected to as being dependent upon a rejected base claim but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. The following is a statement of reasons for the indication of allowable subject matter: After further search and consideration it is determined that the prior art of record neither anticipated nor renders obvious the claimed subject matter of the instant application as a whole either taken alone or in combination, in particular, prior art of record does not teach, the following limitation(s) in combination with the remaining claimed limitation: generating, through a resistor network and a switch network, the inhibit voltage based on the word line voltage. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to KHAMDAN N ALROBAIE whose telephone number is (571)270-7099. The examiner can normally be reached Monday to Thursday (8AM till 6PM). Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Richard Elms can be reached at (571) 272-1869. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /Khamdan N. Alrobaie/Primary Examiner, Art Unit 2824
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Prosecution Timeline

Jan 27, 2025
Application Filed
Sep 23, 2026
Non-Final Rejection mailed — §102 (current)

Precedent Cases

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
86%
Grant Probability
89%
With Interview (+2.6%)
2y 2m (~6m remaining)
Median Time to Grant
Low
PTA Risk
Based on 662 resolved cases by this examiner. Grant probability derived from career allowance rate.

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