2 pending office actions • 0 art units • 2 examiners • 0 of 2 (0%) have an AI response strategy ready
Difficulty is derived from the rejection statutes on the most recent pending office action. §101-driven and multi-statute cases are graded Hard; §112-only and obviousness-type double-patenting cases are graded Easy; everything else is Medium. "Unknown" means we have not yet parsed a statute for that office action.
| Bucket | Cases |
|---|---|
| §103 only | 1 (50%) |
| §102 only | 1 (50%) |
How the docket's pending cases split across USPTO tech-center bands.
Manual office-action response work runs about 10 hours per case. The time-saved bands below show what IP Author's prosecution pipeline typically delivers — a conservative 20% on the low end, 35% in the middle, 50% on the high end.
| Examiner | Apps on this docket | Allow rate | Interview lift |
|---|---|---|---|
| ANYA, IGWE U | 1 | 84.9% | -5.1% |
| BRECHT, CHARLES MATTHEW | 1 | — | — |
Cases in front of an examiner with an allow rate of 80%+ where the difficulty is Easy or Medium. The top 1 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18753743 | MOSFET WITH DISTRIBUTED DOPED P-SHIELD ZONES UNDER TRENCHES HAVING DIFFERENT DEPTHS | ANYA, IGWE U | — |
| App # | Title | Examiner | Art Unit | Statutes | Status | Due in | AI | Filed |
|---|---|---|---|---|---|---|---|---|
| 18753743 | MOSFET WITH DISTRIBUTED DOPED P-SHIELD ZONES UNDER TRENCHES HAVING DIFFERENT DEPTHS | ANYA, IGWE U | — | §102 | Non-Final OA | — | Pending | Jun 25, 2024 |
| 18658910 | VERTICAL MOSFET USING A SILICON CARBIDE LAYER AND A SILICON LAYER FOR IMPROVED PERFORMANCE | BRECHT, CHARLES MATTHEW | — | §103 | Non-Final OA | — | Pending | May 08, 2024 |
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