Tech Center 4100 • Art Units: 2817 2824 4100
This examiner grants 0% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18643311 | SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18634372 | SEMICONDUCTOR DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18513011 | SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR MANUFACTURING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18511597 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18625761 | SEMICONDUCTOR DEVICE | Non-Final OA | Toshiba Electronic Devices & Storage Corporation |
| 18435865 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Toshiba Electronic Devices & Storage Corporation |
| 18510231 | SEMICONDUCTOR DEVICE | Non-Final OA | Toshiba Electronic Devices & Storage Corporation |
| 18129874 | INTEGRATED CIRCUIT STRUCTURES WITH BACKSIDE CONDUCTIVE SOURCE OR DRAIN CONTACT HAVING ENHANCED CONTACT AREA | Non-Final OA | Intel Corporation |
| 18407428 | STACKED SEMICONDUCTOR DEVICE | Non-Final OA | Micron Technology, Inc. |
| 18428240 | EXTERNAL CONNECTION PAD APPARATUS AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME | Non-Final OA | SK hynix Inc. |
| 18510481 | SEMICONDUCTOR PACKAGE HAVING COMPENSATED ELECTRICAL CHANNEL PATHS | Non-Final OA | SK hynix Inc. |
| 18654942 | CERAMIC SUBSTRATE EQUIPPED WITH A UNIQUE CODE FOR A HEAT DISSIPATION SUBSTRATE, A HEAT DISSIPATION SUBSTRATE EQUIPPED WITH A UNIQUE CODE FOR A POWER SEMICONDUCTOR MODULE, AND A POWER SEMICONDUCTOR MODULE INCLUDING A HEAT DISSIPATION SUBSTRATE EQUIPPED WITH A UNIQUE CODE | Non-Final OA | LX SEMICON CO., LTD. |
| 18654238 | SEMICONDUCTOR DEVICE | Non-Final OA | ROHM CO., LTD. |
| 18400458 | COAXIAL THROUGH INSULATOR VIA BETWEEN CHIPLETS | Final Rejection | International Business Machines Corporation |
| 18679362 | INTERCONNECTION STRUCTURE AND METHOD FOR FORMING THE SAME | Non-Final OA | United Microelectronics Corp. |
| 18658910 | VERTICAL MOSFET USING A SILICON CARBIDE LAYER AND A SILICON LAYER FOR IMPROVED PERFORMANCE | Non-Final OA | MaxPower Semiconductor, Inc. |
| 18617558 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES | Non-Final OA | Amkor Technology Singapore Holding Pte. Ltd. |
| 18696375 | Semiconductor detector device | Non-Final OA | Teknologian tutkimuskeskus VTT Oy |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy