1 pending office actions
| App # | Title | Examiner | Art Unit | Status | Filed |
|---|---|---|---|---|---|
| 18264045 | MOSFET DEVICE HAVING A DEEP WELL OF FIRST CONDUCTIVE TYPE FORMED UNDER A BASE REGION OF FIRST CONDUCTIVE TYPE IN A SILICON CARBIDE SUBSTRATE AND A METHOD THEREFOR | MAI, ANH D | 2893 | Non-Final OA | Aug 02, 2023 |
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